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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 613-615 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present picosecond time resolved photoluminescence measurements of GaAs/AlGaAs quantum dot structures—grown by modified droplet epitaxy—where no wetting layer is connecting the dots. We find a fast carrier relaxation time (30 ps) to the dot ground state, which becomes even faster for increasing the photogenerated carrier injection. This shows that the two–dimensional character of the wetting layer is not relevant in determining the quantum dot capture, in contrast with the conclusions of several models so far presented in literature. We discuss the role of the barrier states as well as the possibility of Auger processes involving the zero-dimensional levels of the quantum dots. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Solid State Communications 16 (1975), S. 679-682 
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Solid State Communications 43 (1982), S. 957-959 
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Solid State Communications 26 (1978), S. 757-759 
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1809-1813 
    ISSN: 0392-6737
    Keywords: Visible and ultraviolet spectra
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Cristalli singoli di MnIn2S4 sono stati cresciuti con il metodo di Bridgman. Usando il metodo del fattoreR, si ottengono il parametro d'inversionex=0.08 e il parametro di deformazioneu=0.382. Il picco fondamentale di assorbimento è posto a 1.88 eV a temperatura ambiente e a 2.04 eV alla temperatura dell'elio liquido. Si discute la transizione elettronica per il picco di assorbimento fondamentale in relazione a α-MnS e ai calcoli di banda preliminari di Kambara. Sei modi vibrazionali sono stati osservati nella vibrazione reticolare. I parametri di dispersione sono calcolati usando il modello classico dell'oscillatore. Un'alta resistività elettrica è stata ottenuta a temperatura ambiente.
    Abstract: Резюме По методу Бридгмана выращиваются монокристаллы MnIn2S4. Используя методR-фактора, определяются параметр инверсииx=0.08 и параметр деформацииu=0.382. Основной край поглощения расположен при 1.88 эВ при комнатной температуре и при 2.04 эВ при температуре Зидкого гелия. Обсуждается электронный переход для основного края поглощения в связи с α-MnS и предварительным вычислением зонной структуры, проведенным Камбара. В колебаниях решетки наблюдаются шесть колебательных мод. Используя модель классического осциллятора, вычисляются параметры дисперсии. При комнатной температуре получается высокое электрическое сопротивление.
    Notes: Summary Single crystals of MnIn2S4 were grown by the Bridgman method. By using theR-factor method, the inversion parameterx=0.08 and the deformation parameteru=0.382 are obtained. The fundamental absorption edge is positioned at 1.88 eV at room temperature and at 2.04 eV at liquid-He temperature. The electronic transition for the fundamental absorption edge is discussed in relation to α-MnS and preliminary band calculation by Kambara. Six vibrational modes were observed in the lattice vibration. Dispersion parameters are calculated by using the classical oscillator model. High electrical resistivity was obtained at room temperature.
    Type of Medium: Electronic Resource
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