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  • 1
    Electronic Resource
    Electronic Resource
    Improved electroluminescence of ZnS:Mn thin films by codoping with potassium chloride (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1664-1670 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Alternating current thin film electroluminescent devices have been fabricated using sputter-deposited ZnS:Mn with and without codoped potassium chloride via both in situ and ex situ methods. In situ codoping proved to be difficult due to a memory effect in the deposition chamber. Samples codoped with potassium chloride via an ex situ diffusion method exhibited improvements in brightness of up to 70% (572 vs 337 cd/m2) and efficiency of up to 60% (1.95 vs 1.25 lm/W) over noncodoped samples. The threshold voltage increased by (approximate)5% (160 vs 168 V), and the brightness-versus-voltage curve stabilized more rapidly for the devices. Several possible mechanisms to explain these effects are discussed. While modest microstructural changes contribute to the improvements, changes in point defects which lead to modification of the space charge in the devices appears to be the dominant mechanism. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1338988
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  • 2
    Electronic Resource
    Electronic Resource
    Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 67-69 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that the insertion of low-temperature AlGaN interlayers is effective in reducing mismatch-induced tensile stress and suppressing the formation of cracks during growth of high-temperature AlGaN directly upon GaN epilayers. Stress evolution and relaxation is monitored using an in situ optical stress sensor. The combination of in situ and ex situ characterization techniques enables us to determine the degree of pseudomorphism in the interlayers. It is observed that the elastic tensile mismatch between AlGaN and GaN is mediated by the relaxation of interlayers; the use of interlayers offers tunability in the in-plane lattice parameters. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1336812
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  • 3
    Electronic Resource
    Electronic Resource
    Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3205-3207 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ stress monitoring has been employed during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors (DBRs). It was found that the insertion of multiple AlN interlayers is effective in converting the tensile growth stress typically observed in this system into compression, thus alleviating the problem of crack generation. Crack-free growth of a 60 pair Al0.20Ga0.80N/GaN quarter-wavelength DBR was obtained over the entire 2 in. wafer; an accompanying reflectivity of at least 99% was observed near the peak wavelength around 380 nm. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371240
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    Paper (German National Licenses)
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