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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence of ordered Ga0.5In0.5P grown by metalorganic vapor phase epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1573-1575 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of ordered Ga0.5In0.5P epitaxial layers grown by metalorganic vapor phase epitaxy are investigated by photoluminescence (PL) in a temperature range of 10–200 K using excitation power densities between 0.35 W/cm2 and 20 W/cm2. It is found that the intensity of the highest-energy PL peak of the ordered Ga0.5In0.5P epilayer decreases first, then increases and finally goes down again with increasing temperature. A model of ordered Ga0.5In0.5P epitaxial layers is proposed, in which the ordered Ga0.5In0.5P epilayer is regarded as a type-II quantum well structure with band-tail states, and the dependence of PL spectra on the temperature and excitation intensity is reasonably explained. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114943
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence from Ge clusters embedded in porous silicon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3435-3437 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible photoluminescence (PL) and Raman spectra of Ge clusters embedded in porous silicon (PS) have been studied. The as-prepared sample shows redshifted and enhanced room temperature PL relative to reference PS. This result can be explained by the quantum confinement effect on excitons in Ge clusters and tunnel of excitons from Si units of the PS skeleton to Ge clusters. One year storage in dry air results in a pronounced decrease in PL intensity but blue-shifted in contrast to reference PS. This phenomenon correlates to the size decrease of macerated Ge clusters and occurrence of "quantum depletion" in Ge clusters. Consequently, only excitons in Si units contribute to PL. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367139
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  • 3
    Electronic Resource
    Electronic Resource
    High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2868-2870 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High power and long lifetime have been demonstrated for a semiconductor quantum-dot (QD) laser with five-stacked InAs/GaAs QDs separated by an InGaAs strain-reducing layer (SRL) and a GaAs spacer layer as an active medium. The QD lasers exhibit a peak power of 3.6 W at 1080 nm, a quantum slope efficiency of 84.6%, and an output-power degradation rate of 5.6%/1000 h with continuous-wave constant-current operation at room temperature. A comparative reliability investigation indicates that the lifetime of the InAs/GaAs QD laser with the InGaAs SRL is much longer than that of a QD laser without the InGaAs SRL. This improved lifetime of the QD laser could be explained by the reduction of strain in and around InAs QDs induced by the InGaAs SRL. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415416
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of DX centers in the AlxGa1−xAs barrier on the low-temperature density and mobility of the two-dimensional electron gas in GaAs/AlGaAs modulation-doped heterostructure (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1406-1408 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In GaAs/AlGaAs modulation-doped heterostructure, adopting triangular quantum well approximation and including the seven major scattering mechanisms, we considered the existence of the DX centers in the AlxGa1−xAs barrier and calculated the dependence of low-temperature two-dimensional electron gas (2DEG) density and mobility on spacer layer thickness, Al composition and Si-doping concentration of the AlxGa1−xAs barrier. The calculated results explained the experimental results that cannot be explained by the previous studies. Our calculations demonstrate that DX centers in the AlxGa1−xAs barrier play an important role in determining low-temperature 2DEG density and mobility. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113216
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  • 5
    Electronic Resource
    Electronic Resource
    Interface roughness scattering in GaAs–AlGaAs modulation-doped heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3329-3331 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the influence of interface roughness scattering on the mobility of two-dimensional electron gas (2DEG) in GaAs–AlGaAs modulation-doped heterostructures (MDH) both experimentally and theoretically. When the background ionized impurity concentration in the GaAs layer is smaller than 2.5×1015 cm−3, our investigation shows that interface roughness scattering is the dominant scattering mechanism in the high 2DEG density (Ns≥5×1011 cm−2) GaAs–AlGaAs MDH. We also demonstrate that interface roughness scattering is about an order of magnitude stronger than alloy disorder scattering in GaAs–AlGaAs MDH if the AlGaAs/GaAs interface fluctuation is only one monolayer of GaAs. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112382
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  • 6
    Electronic Resource
    Electronic Resource
    Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001) (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 619-621 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxy has been used for growing InGaAs self-assembled quantum dots (QDs) in InAlAs on an InP(001) substrate. Nominal deposition of 9.6 monolayers of In0.9Ga0.1As results in QDs of ∼6.5 nm high with an areal density of 3.3×1011 cm−2. Conspicuous bimodal size distribution is identified, and is responsible for the observed QDs photoluminescence (PL) emission with two peaks at 0.627 and 0.657 eV. Good agreement is achieved between the observed PL peak energies and calculated results.© 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369415
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  • 7
    Electronic Resource
    Electronic Resource
    Composition dependence and random alloy effects for Cu and Fe in the semiconductor alloy AlGaAs (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1718-1722 
    Details
    ISSN: 0392-6737
    Keywords: Impurity and defect absorption in solids
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Le nostre indagini di livelli di accettori profondi, uno correlato al ferro e due correlati al rame nella lega semiconduttrice AlGaAs, mostra che le energie della soglia ottica hanno la stessa dipendenza lineare dalla composizione in tutti e tre i livelli. II particolare comportamento transitorio non esponenziale per l'emissione termica dei portatori può essere spiegata da un modello in cui i livelli di energia sono allargati. Si suggerisce un meccanismo di allargamento dovuto al miscelamento casuale.
    Abstract: Резюме Наши исследования одного железного и двух медных глубоких акцепторных уровней в полупроводниковых сплавах AlGaAs показывают, что оптические пороговые энергии имеют ту же линейную зависимость от состава для всех трех уровней. Конкретное неэкспоненциальное переходное поведение для теплового излучения носитей может быть обьяснено с помощью модели, в которой энергетические уровни уширены. Предполагается механизм уширения, обусловленный неупорядоченностью сплава.
    Notes: Summary Our investigations of one iron- and two copper-related deep acceptor levels in the semiconductor alloy AlGaAs show that the opticalthreshold energies have the same linear composition dependence for all three levels. The particular nonexponential transient behaviour for thermal emission of carriers can be explained by a model in which the energy levels are broadened. A broadening mechanism due to random alloying is suggested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457856
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  • 8
    Electronic Resource
    Electronic Resource
    Homogeneity and Behaviours of Deep Centers of the Space Melt Grown GaAs Crystals (1991)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 50 (Jan. 1991), p. 33-37 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/11/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.50.33.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum (1999)
    Springer
    Optical and quantum electronics 31 (1999), S. 1235-1246 
    Details
    ISSN: 1572-817X
    Keywords: quantum dot ; SLD ; wide spectrum
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We propose a novel superluminescent diode (SLD) with a quantum dot (QD) active layer, which should give a wider output spectrum than a conventional quantum well SLD. The device makes use of inhomogeneous broadness of gain spectrum resulting from size inhomogeneity of self-assembled quantum dots grown by Stranski– Krastanow mode. Taking a design made out in the InxGa1-xAs/GaAs system for example, the spectrum characteristics of the device are simulated realistically, 100–200 nm full width of half maximum of output spectrum can be obtained. The dependence of the output spectrum on In composition, size distribution and injection current of the dots active region is also elaborated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1007030119338
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