Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 2868-2870
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High power and long lifetime have been demonstrated for a semiconductor quantum-dot (QD) laser with five-stacked InAs/GaAs QDs separated by an InGaAs strain-reducing layer (SRL) and a GaAs spacer layer as an active medium. The QD lasers exhibit a peak power of 3.6 W at 1080 nm, a quantum slope efficiency of 84.6%, and an output-power degradation rate of 5.6%/1000 h with continuous-wave constant-current operation at room temperature. A comparative reliability investigation indicates that the lifetime of the InAs/GaAs QD laser with the InGaAs SRL is much longer than that of a QD laser without the InGaAs SRL. This improved lifetime of the QD laser could be explained by the reduction of strain in and around InAs QDs induced by the InGaAs SRL. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1415416
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