ISSN:
1600-5724
Source:
Crystallography Journals Online : IUCR Backfile Archive 1948-2001
Topics:
Chemistry and Pharmacology
,
Geosciences
,
Physics
Notes:
The intersecting-Kikuchi-line method, which is one of the electron diffraction methods of determining crystal structure factors, has been applied to Si at 1000 kV, with the object of improving the accuracy. It is shown that, with a favourable choice of line intersections, the accuracy is improved by at least a factor of two at 1000 kV compared to the case of 100 kV. From the intersections of the weak Kikuchi lines 1004, 9{\bar 1}3 and 0106 with the {\bar 1} {\bar 1} {\bar 1} line and from those of the 9{\bar 1}3, 8{\bar 2}2 and {\bar 1}95 lines with the {\bar 2}{\bar 2}{\bar 2} line, both the 111 and 222 structure factors are determined simultaneously, including their sign. The 220 structure factor, which cannot be determined by the critical-voltage method unless an accelerating voltage higher than 1000 kV is applied, is also determined from the intersection of the 95{\bar 3} line with the {\bar 2}{\bar 2}0 line. The results obtained agree with those determined by the X-ray Pendellösung method.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1107/S0567739479002023
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