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  • 1
    Electronic Resource
    Electronic Resource
    The production and use of ultralow energy ion beams : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1032-1035 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An ion accelerator, purpose built to produce beams at energies down to 10 eV with current densities in the 10–100 μA cm−2 range, is described. Fitted with dual ion source assemblies, the machine enables ultralow energy ion implantation and the growth of films and multilayers to be carried out under highly controlled conditions. The accelerator delivers ion beams into an ultrahigh vacuum chamber, containing a temperature controlled target stage (range −120 to +1350 °C), where they are used to study the fundamental physics relating to the interaction of ultralow energy ions with surfaces. This knowledge underlies a wide range of ion-beam and plasma-based technologies and, to illustrate its importance, results are presented from investigations designed to determine the optimum conditions for the growth of diamond-like and aluminum films by ion-beam deposition and the formation of ultrashallow junctions in semiconductors by 2.5 keV As+ implantation. The later investigation shows how transient arsenic diffusion, which occurs during post-implant thermal processing, can be controlled by manipulating the substrate temperature during implantation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150379
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  • 2
    Electronic Resource
    Electronic Resource
    An investigation on the modeling of transient enhanced diffusion of ultralow energy implanted boron in silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5381-5385 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated and modeled the B diffusion in Si following ultralow energy implantation. Secondary ion mass spectrometry measurements revealed that B diffusion is transient enhanced. For the simulation we have used a kick-out model which requires only two uncorrelated parameters able to describe the microscopical processes involved. By optimizing the parameters, an excellent agreement between the simulated and the experimental profile broadening is achieved. Moreover, an extension of the previous model that accounts for interstitial cluster formation and dissolution was implemented in order to achieve a better description of B diffusion. The extracted parameters are discussed and compared with published values. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361238
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical activation of ultralow energy As implants in Si (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3873-3878 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arsenic implants performed in Si at ultralow energy have been extensively studied with structural, chemical, and electrical analysis. The near-surface damage annealing and its influence on the electrical activation of ultrashallow As in Si as a function of the anneal ambient has been investigated. Double alignment medium energy ion scattering, high resolution transmission electron microscopy, and low energy secondary ion mass spectrometry have been used to assess the dopant behavior and crystal recovery in the near-surface regions. The electrical activation of As in Si has been measured with spreading resistance profiling, four point probe, and van der Pauw methods. Major redistribution of the dopant into the SiO2–Si interface region occurred during crystal regrowth of the damaged Si layer. An inactive meta-stable As solid solution was formed in the near-surface region after amorphous layer regrowth. Electrical activation of the dopant occurred upon dissociation of the As solid solution, when the dopant concentration fell to the steady state level. The As diffusion observed has been shown to be enhanced for short (10 s) anneal times at 1100 °C. When annealing at high temperature in an oxidizing ambient the dopant is retained at a high concentration in the solid and a higher level of electrical activation is observed. Significant outdiffusion of the dopant is observed during high temperature annealing in nonoxidizing conditions which reduced the level of activation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403672
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  • 4
    Electronic Resource
    Electronic Resource
    The dependence of arsenic transient enhanced diffusion on the silicon substrate temperature during ultralow energy implantation (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 571-573 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The redistribution of As during high-temperature annealing has been investigated as a function of the Si(100) substrate temperature (−120 °C, +25 °C, and +300 °C) during 2.5 keV implantation (to 1.5×1015atoms/cm2). Each implant produced a damaged near-surface region, the extent of which varied with implant temperature. Samples implanted at each temperature were annealed in a nitrogen ambient with a few percent oxygen for 10 s at 550, 925, and 975 °C. The changes in implant damage and dopant distributions both prior to and following annealing were investigated using medium energy ion scattering and secondary ion mass spectrometry. Transient enhanced diffusion (TED) of the dopant was observed for all implant temperatures after 925 °C annealing with the 25 °C implant showing the deepest diffusion. Between 925 and 975 °C annealing, the As diffusion rate in the 300 °C exceeded that of the 25 °C implant. Significantly, the −120 °C implant displayed less TED of As compared to the higher temperature implants following annealing at 975 °C. The results indicate that the diffusion is affected by the nature of the post-implant damage and the high arsenic concentrations. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125820
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