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  • 1
    Electronic Resource
    Electronic Resource
    Cell cycle-dependent replication of the DNA of minute virus of mice, a parvovirus
    Amsterdam : Elsevier
    BBA Section Nucleic Acids And Protein Synthesis 607 (1980), S. 420-431 
    Details
    ISSN: 0005-2787
    Keywords: 5-Bromodeoxyuridine ; Cell cycle ; DNA replication ; Minute virus of mice ; Parvovirus ; Single-stranded DNA
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0005-2787(80)90152-5
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  • 2
    Electronic Resource
    Electronic Resource
    Electron emission from diamond coated silicon field emitters (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2842-2844 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline diamond thin films have been formed on single crystal silicon field emitters using bias-enhanced nucleation in a microwave plasma chemical vapor deposition system. A diamond nucleation density greater than 1010/cm2 with small grain sizes (〈25 nm) was achieved on the surfaces of silicon emitters with nanometer scale curvature. Field emission from these diamond coated silicon emitters exhibited significant enhancement compared to the pure Si emitters both in total emission current and stability. Using a Fowler–Nordheim analysis a very large effective emitting area of nearly 10−11 cm2 was obtained from the diamond coated Si emitters compared to that of uncoated Si emitters (10−16 cm2). This area was found to be comparable to the entire tip surface area. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112538
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  • 3
    Electronic Resource
    Electronic Resource
    Bias induced diamond nucleation studies on refractory metal substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5119-5124 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carbide forming nature of the substrate appears to be an important property when performing bias-enhanced nucleation (BEN); therefore, various refractory metals were studied since they are known carbide formers. Nucleation densities approaching 1×1010/cm2 were observed on both hafnium and titanium. The nucleation density on tantalum, niobium, and tungsten was enhanced to a lesser extent in descending order of influence, respectively. An induction time prior to the onset of significant diamond nucleation was observed on the refractory metals as well as on silicon and may be reliant upon the formation of a critical carbide thickness. Shorter induction times were observed for silicon which may be explained since this material forms a carbide of typically only several nanometers in thickness as opposed to the refractory metals which may form carbides on the order of several microns in thickness. Also, a strong correlation was observed between the carbide heat of formation and the nucleation densities at 60 min of BEN. These findings verify the relevance of a carbide formation to diamond nucleation via BEN and also provides a clue as to the mechanism(s) by which diamond is nucleating. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359322
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  • 4
    Electronic Resource
    Electronic Resource
    Comparative prospective study on splint therapy of anterior disc displacement without reduction (2005)
    Oxford, UK : Blackwell Science Ltd
    Journal of oral rehabilitation 32 (2005), S. 0 
    Details
    ISSN: 1365-2842
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: summary A prospective randomized study was carried out to compare the therapeutic success of two different types of splint in patients with painful anterior disc displacement of the temporomandibular joint. The patients in Group I (n = 20) received stabilization splint therapy and the patients in Group II (n = 20) pivot splint therapy. Clinical investigation of the craniomandibular system was performed before and 1, 2 and 3 months after therapy and this was accompanied by subjective evaluation by the patients of their symptoms, using a validated questionnaire with visual analogue scales (VAS). There was a significant increase in maximum jaw opening and a significant reduction in subjective pain in both groups during the course of therapy (Wilcoxon test, P 〈 0·05). Active jaw opening increased by a mean of 8·05 mm in the group of patients treated with a stabilization splint (Group I). The comparable figure with pivot splint therapy (Group II) was 8·26 mm. The VAS scale value in Group I was reduced by 30·54 units and in Group II by 39·36 scale units. However, neither of these differences between the groups was statistically significant (Mann–WhitneyU-test, P 〉 0·05). It can be concluded that both types of splint provided effective therapy in patients with anterior disc displacement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2842.2005.01452.x
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  • 5
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2156-2158 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of single crystal gallium nitride in dry air has been investigated. X-ray photoelectron spectroscopy (XPS) revealed minimal oxide growth at 450 and 750 °C for up to 25 h. However, at 900 °C the growth of an oxide approximately 5000 Å thick was observed after 25 h. This oxide was determined to be the monoclinic β-Ga2O3 using glancing angle x-ray diffraction. XPS spectra of the Ga 3d and Ga 2p core levels indicated peak shifts of 1.2 and 1.3 eV, respectively, from Ga–O to Ga–N bonding. The Ga L3M45M45 core level binding energy was also investigated and β-Ga2O3 and GaN each presented a characteristic peak shape. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118944
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  • 6
    Electronic Resource
    Electronic Resource
    Interfacial reactions between nickel thin films and GaN (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 650-654 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Ni films on GaN were annealed at temperatures between 400 and 900 °C in N2, Ar, and forming gas and were analyzed using glancing angle x-ray diffraction and Auger depth profiling. The first indication of an interfacial reaction was found after an anneal at 600 °C for 1 h, after which Ga was observed to be dissolved in the face-centered cubic Ni film. The extent of dissolution increased with continued annealing. After annealing at 750 °C for 1 hr in either N2 or Ar, greater intermixing occurred. The reaction product was either Ni3Ga or face-centered cubic Ni with dissolved Ga. Annealing at 900 °C resulted in the formation of the B2 phase NiGa. It was clear from Auger depth profiles that the reacted film contained significantly more Ga than N and that N2 gas was released to the annealing environment, even when the samples were annealed in N2 gas at 1 atm. Thus, a trend of increasing Ga content in the reacted films was observed with increasing temperature. The observed reactions are consistent with the thermodynamics of the Ni–Ga–N system. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365593
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  • 7
    Electronic Resource
    Electronic Resource
    Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1215-1217 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ordered diamond films have been deposited on single-crystal silicon substrates via an in situ carburization followed by bias-enhanced nucleation. Textured diamond films with greater than 50% of the grains oriented D(100)//Si(100) and D〈110〉//Si〈110〉 were grown in both a horizontal and vertical microwave plasma chemical vapor deposition reactor. Separate diamond films from each of the two reactors were analyzed both by scanning electron microscopy and Raman spectroscopy. The in situ carburization is speculated to form an epitaxial SiC conversion layer, thus providing an economical alternative to obtaining epitaxial diamond films on single-crystal SiC.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108738
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  • 8
    Electronic Resource
    Electronic Resource
    The nucleation of highly oriented diamond on silicon via an alternating current substrate bias (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3558-3560 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new bias-enhanced nucleation method of forming highly oriented diamond on Si(100) is reported using an alternating current bias source. The percentage of aligned particles via alternating current bias-enhanced nucleation (ac BEN) was greater than 50%. This is compared to less than 10% highly oriented particles when using a conventional negative dc substrate bias. Based on previous work in this area, the peak negative voltage portion of the ac wave form is believed to be responsible for enhancing diamond nucleation. The positive and moderate negative voltage portion of the ac wave form appears to aid the process of forming the highly oriented diamond. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116636
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  • 9
    Electronic Resource
    Electronic Resource
    Bias-enhanced nucleation of highly oriented diamond on titanium carbide (111) substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2810-2812 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bias-enhanced nucleation (BEN) technique has been applied to TiC(111) substrates and resulted in deposition of oriented diamond particles. The orientation was observed via scanning electron microscopy. A dense region of oriented particles was not observed on the samples, presumably due to the excessive twinning of the diamond. However, micrographs taken throughout the substrate showed diamond particles having similar orientation with respect to each other. Some of the diamond particles showed evidence of azimuthal twist and tilting, resulting most likely from the ∼21% lattice mismatch. Raman spectra of the diamond crystals show a strong feature at 1332 cm−1, which is indicative of diamond, and smaller features at 1480 and 1602 cm−1 due to sp2-bonded carbon. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113483
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  • 10
    Electronic Resource
    Electronic Resource
    Production of methane in two non-ruminant herbivores
    Amsterdam : Elsevier
    Comparative Biochemistry and Physiology -- Part A: Physiology 60 (1978), S. 309-311 
    Details
    ISSN: 0300-9629
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0300-9629(78)90254-2
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