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  • 1
    Electronic Resource
    Electronic Resource
    AEM Study on the Phase Transformation of Nickel Silicides in the Ni〈sub〉1-x〈/sub〉Ta〈sub〉x〈/sub〉/Si System (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 124-126 (June 2007), p. 45-48 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: We investigated the phase transformation and thermal stability of Ni silicides formed inNi/Si and Ni0.95Ta0.05/Si systems. The sheet resistance values of the silicide in the Ni0.95Ta0.05/Sisystem were lower than those in Ni/Si system at any temperature. The enhancement of thermalstability is closely related to the phase transformation occurred during post heat-treatment. Microstructureof the phases formed by reaction was investigated by analytical electron microscopy (AEM)and the phase identification of Ni silicide was carried out using convergent beam electron diffraction(CBED) technique. It was found that a Ta rich layer formed on the top of the Ni silicide layer andsmall amount of Ta dissolved into the silicide layer. By addition of Ta atoms, phase transformationfrom NiSi to NiSi2 is retarded and thermal stability of Ni silicide is improved
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.45.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical properties of Bi3.25La0.75Ti3O12 thin films on Si for a metal–ferroelectric–insulator–semiconductor structure (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1516-1518 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: La-modified bismuth titanate [Bi3.25La0.75Ti3O12 (BLT)] thin films have been grown at a low processing temperature of 620 °C by pulsed-laser deposition on a p-Si substrate with a nitrogen-doped thermal oxide SiO2 layer. This metal–ferroelectric–insulator–semiconductor structure exhibited a capacitance–voltage (C–V) hysteresis (memory window) due to ferroelectric polarization. The memory window reached a maximum of 0.8 V at a sweep voltage of 6 V. In addition, BLT films grown on Si exhibited the asymmetric behavior of C–V and current–voltage (I–V) characteristics, i.e., asymmetric shift of the threshold voltage with the sweep voltage. It is found that appreciable charge injection (indirect tunneling) occurs from Si, before the memory window does not even reach the maximum (i.e., 6 V in this structure). The trapped electrons injected from Si cause Vfb1 to shift toward the positive direction rather than the negative direction. This leads to the asymmetric behavior of the C–V curve and the decrease in the memory window. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1400764
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  • 3
    Electronic Resource
    Electronic Resource
    A Study on Interfacial Reaction between Electroless Plated Ni-P/Au UBM and Sn-Bi Eutectic Solder Using AEM (2004)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 449-452 (Mar. 2004), p. 405-408 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Interfacial reaction between electroless plated Ni-P/Au UBM(Under Bump Metallization and eutectic Sn-58mass%Bi solder was studied by using AEM(Analytical Electron Microscopy). UBM is prepared by the electroless plating of Au (0.15μm ) / Ni-15at%P (7 μm ) on bare Cu substrate, and then it is reacted with Sn-58Bi solder at 220°C for 1 min. The chemical analysis using AEMprovided us very consequential information about microstructure of the interface and phases formed. CBED(Convergent Beam Electron Diffraction) technique is used for phase identification of intermetallic compounds. In this study, the AEM results indicate that Ni〈sub〉3〈/sub〉Sn is formed at the P-rich Ni layer/Ni〈sub〉3〈/sub〉Sn〈sub〉4〈/sub〉 interface by crystallographic analysis. The measured primitive cell volume(104.10 Å3)of this phase is close to the N〈sub〉i3〈/sub〉Sn(103.19 Å〈sup〉3〈/sup〉) rather than Ni〈sub〉2〈/sub〉SnP(235.24 Å〈sup〉3〈/sup〉)
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/08/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.449-452.405.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Dry Oxidation Behavior of Epitaxial Si〈sub〉0.7〈/sub〉Ge〈sub〉0.3〈/sub〉 Films (2004)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 449-452 (Mar. 2004), p. 361-364 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We have investigated the oxidation behavior of epi-Si〈sub〉0.7〈/sub〉Ge〈sub〉0.3〈/sub〉 films in dry oxygen ambient. Epi- Si〈sub〉0.7〈/sub〉Ge〈sub〉0.3〈/sub〉 films about 500Å in thickness were deposited on (100) Si wafers by UHV-CVD system. Oxidation was carried out in a conventional tube furnace at 800 °C . In this study, it was found that Ge piles up at the oxide/substrate interface, forming a Ge-rich layer. Because of the large difference in the heat of formation between SiO〈sub〉2〈/sub〉(-730.4KJ/mol at 1000K) and GeO〈sub〉2〈/sub〉(-387.07 at 1000K) [1], the Si is to be more reactive than Ge to oxygen. The oxidation rate of SiGe in a dry oxygen environment is found to be essentially the same as that of pure Si
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/08/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.449-452.361.pdf
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