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  • 1
    Electronic Resource
    Electronic Resource
    288 V-10 V DC- DC Converter Application Using AlGaN/GaN HFETs (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 1321-1324 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We report on the 288 V-10 V DC- DC converter circuit using AlGaN/GaN HFETs forthe first time. The AlGaN/GaN HFET with a large current and a high breakdown voltage operationwas fabricated. That is, the maximum drain current was over 50 A, and the minimum on-resistancewas 70 mohm. The breakdown voltage was over 600 V. A DC-DC down-converter from input DC288 V to output DC 10 V was fabricated using these HFETs. It was confirmed that the switchingspeed of the AlGaN/GaN HFET was faster than that of Si MOSFET. The DC-DC down-converterwas fabricated using these HFETs. This converter was composed of a full bridge circuit using fourn-channel AlGaN/GaN HFETs. In the case of AlGaN/GaN HFET, a gate switching wave (Vgs) andsource-drain wave (Vds) were abrupt compared with those of using Si MOSFETs. In both cases, astable and constant output DC 10V was also obtained and the conversion efficiency of theconverters with AlGaN/GaN HFETs was 84%
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1321.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Halide Fiber Progress in Japan (1991)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 32-33 (Jan. 1991), p. 293-300 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/04/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.32-33.293.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Mass spectrometric study of the reaction of photo-oxidized GaAs with Ga (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4214-4219 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Ga-induced reaction of photo-oxidized GaAs, which is used as a mask material for the in situ selective-area growth of GaAs, has been studied by mass spectrometry. An anomalous behavior of photo-oxidized GaAs was observed by measuring the temperature-programmed desorption after Ga predeposition and the desorption response to pulsed Ga injection onto it. Deposited Ga, less than 3 monolayers, did not directly deoxidize the photo-oxidized GaAs into a volatile product, but, on the contrary, stabilized it. This anomalous behavior was not observed for dark-oxidized GaAs. It is considered that Ga-induced stabilization of the oxide makes the photo-oxidized GaAs more effective as a mask for selective-area growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356008
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  • 4
    Electronic Resource
    Electronic Resource
    High-temperature reliability of GaN metal semiconductor field-effect transistor and bipolar junction transistor (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7931-7934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality GaN was grown using gas-source molecular beam epitaxy (GSMBE). We fabricated a GaN metal semiconductor field-effect transistor (MESFET) and an n–p–n bipolar junction transistor. The high-temperature reliability of the GaN MESFET and bipolar junction transistor was investigated. That is, the life performance of the FET at 400 °C was examined during continuous current injection at 400 °C. We confirmed that the FET performance did not change at 400 °C for 300 h. No degradation of the metal–semiconductor interface was observed by secondary ion-mass spectrometry and transmission electron microscopy. Furthermore, an n–p–n bipolar junction transistor using GaN grown by GSMBE was demonstrated. The bipolar junction transistor was operated at 300 °C. The reliability of a GaN MESFET and the bipolar junction transistor at high temperature was thus confirmed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370610
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  • 5
    Electronic Resource
    Electronic Resource
    Reliability of metal semiconductor field-effect transistor using GaN at high temperature (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2940-2942 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reliability of a GaN metal semiconductor field-effect transistor (MESFET) was investigated. We used Au/Pt as a Schottky gate and Ti/Al as a source drain of a GaN MESFET. The thermal stress test of the GaN MESFET at high temperature was investigated. It was found that no change of FET characteristics was observed even after the device was heated at 400 °C for 1000 h. Furthermore, using a GaN MESFET which was heated at 400 °C for 1000 h, a life of FET at 350 °C was examined by a continuously current injection at 350 °C. We confirmed that the FET performance did not change at 350 °C for 150 h. No degradation of metal–semiconductor interface was observed by secondary ion mass spectrometry and a transmission electron microscope. The reliability of the GaN MESFET as a high-temperature operation transistor was fully demonstrated. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368448
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  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence measurement of InGaN and GaN grown by a gas-source molecular-beam epitaxy method (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7966-7969 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN and InxGa1−xN were grown using a gas-source molecular-beam epitaxy method. Sapphire substrates were used for GaN growth. Ammonia (NH3) gas was used as the nitrogen source gas. As a result, GaN and InxGa1−xN crystals with mirror surfaces were obtained using uncracked ammonia gas. Photoluminescence measurements of InxGa1−xN and GaN were investigated. No deep-level emission was observed and only the band-edge emission spectra of InxGa1−xN and Si-doped GaN crystals were observed. It was confirmed that, in the case of undoped GaN growth, the yellow luminescence disappeared upon increasing the V/III flux ratio. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365398
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  • 7
    Electronic Resource
    Electronic Resource
    AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation (2002)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 389-393 (Apr. 2002), p. 1527-1530 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/06/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.389-393.1527.pdf
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