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  • 1
    Electronic Resource
    Electronic Resource
    Thermodynamic model of hydrogen-induced silicon surface layer cleavage (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6551-6553 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thermodynamic model of hydrogen-induced silicon surface layer splitting with the help of a bonded silicon wafer is proposed in this article. Wafer splitting is the result of lateral growth of hydrogen blisters in the entire hydrogen-implanted region during annealing. The blister growth rate depends on the effective activation energies of both hydrogen complex dissociation and hydrogen diffusion. The hydrogen blister radius was studied as a function of annealing time, annealing temperature, and implantation dose. The critical radius was obtained according to the Griffith energy condition. The time required for wafer splitting at the cut temperature was calculated in accordance with the growth of hydrogen blisters. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370109
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  • 2
    Electronic Resource
    Electronic Resource
    Observation of quantum-confined Stark shifts in SiGe/Si type-I multiple quantum wells (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8195-8197 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum-confined Stark shifts in SiGe/Si type-I multiple quantum wells are suggested by the bias dependence of the photocurrent spectra of p-i-n photodiodes. Both Stark redshift and blueshift have been observed for the same sample in the different ranges of electric fields applied to the quantum wells. The turnaround point corresponds to a certain electric field (named "critical" field). This phenomenon was generally predicted by Austin in 1985 [Phys. Rev. B 31, 5569 (1985)] and calculated in detail for SiGe quantum structure by Kim recently [Thin Solid Films 321, 215 (1998)]. The critical electric field obtained from the photocurrent spectra is in reasonable agreement with the theoretical prediction. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373518
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  • 3
    Electronic Resource
    Electronic Resource
    Modeling the dynamics of Si wafer bonding during annealing (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4404-4406 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bonding behavior of silicon wafers depends on activation energy for the formation of siloxane bonds. In this article we developed a quantitative model on the dynamics of silicon wafer bonding during annealing. Based on this model, a significant difference in the bonding behaviors is compared quantitatively between the native oxide bonding interface and the thermal oxide bonding interface. The results indicate that the bonding strength of the native oxide interface increases with temperature much more rapidly than that of the thermal oxide interface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1308069
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  • 4
    Electronic Resource
    Electronic Resource
    SiGe/Si resonant-cavity-enhanced photodetectors for 1.3 μm operation fabricated using wafer bonding techniques (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1718-1720 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A SiGe/Si multiple-quantum-well resonant-cavity-enhanced (RCE) photodetector for 1.3 μm operation was fabricated using bonding reflector process. A full width at half maximum (FWHM) of 6 nm and a quantum efficiency of 4.2% at 1314 nm were obtained. Compared to our previously reported SiGe RCE photodetectors fabricated on separation-by-implanted-oxygen wafer, the mirrors in the device can be more easily fabricated and the device can be further optimized. The FWHM is expected to be less than 1 nm and the detector is fit for density wavelength division multiplexing applications. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492868
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  • 5
    Electronic Resource
    Electronic Resource
    Elastic deformation of wafer surfaces in bonding (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4401-4403 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model has been proposed for describing elastic deformation of wafer surfaces in bonding. The change of the surface shape is studied on the basis of the distribution of the periodic strain field. With the condition of diminishing periodic strain away from the interface, Airy stress function has been found that satisfies the elastic mechanical equilibrium. The result reveals that the wavy interface elastically deforms a spatial wavelength from the interface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289233
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  • 6
    Electronic Resource
    Electronic Resource
    Si1−xGex/Si resonant-cavity-enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3 μm (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 157-159 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a Si1−xGex/Si multiple quantum-well resonant-cavity-enhanced (RCE) photodetector with a silicon-on-oxide reflector as the bottom mirror operating near 1.3 μm. The breakdown voltage of the photodetector is above 18 V and the dark current density at 5 V reverse bias is 12 pA/μm2. The RCE photodetector shows enhanced responsivity with a clear peak at 1.285 μm and the peak responsivity is measured around 10.2 mA/W at a reverse bias of 5 V. The external quantum efficiency at 1.3 μm is measured to be 3.5% under reverse bias of 16 V, which is enhanced three- to fourfold compared with that of a conventional p-i-n photodetector with a Ge content of 0.5 reported in 1995 by Huang et al. [Appl. Phys. Lett. 67, 566 (1995)]. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126909
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  • 7
    Electronic Resource
    Electronic Resource
    Si-based optoelectronic devices and their attractive applications (1999)
    Springer
    Czechoslovak journal of physics 49 (1999), S. 837-848 
    Details
    ISSN: 1572-9486
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The semiconductor photonics and optoelectronics which have a great significance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent research carried out in our laboratory in enhanced luminescence from low dimensional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped Si x N y /Si. A ring shape waveguide structure, used to promote the effective absorption coefficient in PIN photodetector for 1.3 μm wavelength and a resonant cavity enhanced structure, used to improve the quantum efficiency and response in heterostructure photo-transistor (HPT), are also proposed in this paper.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1021253510726
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  • 8
    Electronic Resource
    Electronic Resource
    AlGaInP visible quantum well lasers for information technology (1999)
    Springer
    Czechoslovak journal of physics 49 (1999), S. 791-796 
    Details
    ISSN: 1572-9486
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract 650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been studied and the results are presented in this paper. Threshold current density of broad area contact laser diodes can be as low as 350 A/cm2. Laser diodes with buried-ridge strip waveguide structures were made, threshold currents and differential efficiencies are (22–40) mA and (0.2–0.7) mW/mA, respectively. Typical output power for the laser diodes is 5 mW, maximum output power of 15 mW has been obtained. Their operation temperature can be up to 90°C under power of 5 mW. After operating under 90°C and 5 mW for 72 hrs, the average increments for the threshold currents of the lasers at 25°C and the operation currents at 5 mW (at 25°C) are (2–3) mA and (3–5) mA, respectively. Reliability tests showed that no obvious degradation was observed after 1400 hours of CW operation under 50°C and 2.5 mW.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1021241208000
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  • 9
    Electronic Resource
    Electronic Resource
    Electro-optic properties of poled guest-host organic polymer DCNP/PEK-c thin films (2000)
    Springer
    Journal of materials science 19 (2000), S. 147-149 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1006663818828
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