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  • 1
    Electronic Resource
    Electronic Resource
    Observation of quantum-confined Stark shifts in SiGe/Si type-I multiple quantum wells (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8195-8197 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum-confined Stark shifts in SiGe/Si type-I multiple quantum wells are suggested by the bias dependence of the photocurrent spectra of p-i-n photodiodes. Both Stark redshift and blueshift have been observed for the same sample in the different ranges of electric fields applied to the quantum wells. The turnaround point corresponds to a certain electric field (named "critical" field). This phenomenon was generally predicted by Austin in 1985 [Phys. Rev. B 31, 5569 (1985)] and calculated in detail for SiGe quantum structure by Kim recently [Thin Solid Films 321, 215 (1998)]. The critical electric field obtained from the photocurrent spectra is in reasonable agreement with the theoretical prediction. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373518
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  • 2
    Electronic Resource
    Electronic Resource
    Si1−xGex/Si resonant-cavity-enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3 μm (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 157-159 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a Si1−xGex/Si multiple quantum-well resonant-cavity-enhanced (RCE) photodetector with a silicon-on-oxide reflector as the bottom mirror operating near 1.3 μm. The breakdown voltage of the photodetector is above 18 V and the dark current density at 5 V reverse bias is 12 pA/μm2. The RCE photodetector shows enhanced responsivity with a clear peak at 1.285 μm and the peak responsivity is measured around 10.2 mA/W at a reverse bias of 5 V. The external quantum efficiency at 1.3 μm is measured to be 3.5% under reverse bias of 16 V, which is enhanced three- to fourfold compared with that of a conventional p-i-n photodetector with a Ge content of 0.5 reported in 1995 by Huang et al. [Appl. Phys. Lett. 67, 566 (1995)]. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126909
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  • 3
    Electronic Resource
    Electronic Resource
    X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5713-5717 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ErSi1.7 layers with high crystalline quality (χmin of Er is 1.5%) have been formed by 90 keV Er ion implantation to a dose of 1.6×1017/cm2 at 450 °C using channeled implantation. The perpendicular and parallel elastic strain e⊥=−0.94%±0.02% and e(parallel)=1.24%±0.08% of the heteroepitaxial erbium silicide layers have been measured with symmetric and asymmetric x-ray reflections using a double-crystal x-ray diffractometer. The deduced tetragonal distortion eT(XRD)=e(parallel)−e⊥ =2.18%±0.10%, which is consistent with the value eT(RBS)=2.14±0.17% deduced from the Rutherford backscattering and channeling measurements. The quasipseudomorphic growth of the epilayer and the stiffness along a and c axes of the epilayer deduced from the x-ray diffraction are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363623
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  • 4
    Electronic Resource
    Electronic Resource
    Si-based optoelectronic devices and their attractive applications (1999)
    Springer
    Czechoslovak journal of physics 49 (1999), S. 837-848 
    Details
    ISSN: 1572-9486
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The semiconductor photonics and optoelectronics which have a great significance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent research carried out in our laboratory in enhanced luminescence from low dimensional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped Si x N y /Si. A ring shape waveguide structure, used to promote the effective absorption coefficient in PIN photodetector for 1.3 μm wavelength and a resonant cavity enhanced structure, used to improve the quantum efficiency and response in heterostructure photo-transistor (HPT), are also proposed in this paper.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1021253510726
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