Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
80 (1996), S. 5713-5717
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
ErSi1.7 layers with high crystalline quality (χmin of Er is 1.5%) have been formed by 90 keV Er ion implantation to a dose of 1.6×1017/cm2 at 450 °C using channeled implantation. The perpendicular and parallel elastic strain e⊥=−0.94%±0.02% and e(parallel)=1.24%±0.08% of the heteroepitaxial erbium silicide layers have been measured with symmetric and asymmetric x-ray reflections using a double-crystal x-ray diffractometer. The deduced tetragonal distortion eT(XRD)=e(parallel)−e⊥ =2.18%±0.10%, which is consistent with the value eT(RBS)=2.14±0.17% deduced from the Rutherford backscattering and channeling measurements. The quasipseudomorphic growth of the epilayer and the stiffness along a and c axes of the epilayer deduced from the x-ray diffraction are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363623
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