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  • 1
    Electronic Resource
    Electronic Resource
    Stroop interference: Hemispheric difference in Chinese speakers
    Amsterdam : Elsevier
    Brain and Language 13 (1981), S. 372-378 
    Details
    ISSN: 0093-934X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Linguistics and Literary Studies , Medicine , Psychology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0093-934X(81)90101-2
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  • 2
    Electronic Resource
    Electronic Resource
    Comprehensive Rutherford backscattering and channeling study of ion-beam-synthesized ErSi1.7 layers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6920-6925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial ErSi1.7 layers with excellent crystallinity (χmin of Er is 1.5%) have been prepared by high-dose 90 keV Er implantation into a Si(111) substrate using channeled implantation. Such an ErSi1.7/Si system offers a rare opportunity to study comprehensively the structure, orientation, and strain using Rutherford backscattering spectrometry and channeling analysis. We found that the minimum yield and width of the [0001] dip of the Er atoms are quite different from that of the Si atoms in the silicide layer. It is confirmed that the azimuthal orientation of the hexagonal ErSi1.7 layer to the cubic Si substrate is ErSi1.7 [0001] (parallel) Si[111] and ErSi1.7 {112¯0} (parallel) Si {110}, and that the epilayer is compressively strained. Besides, by using the angular scan and image scan, we reveal that the dips of the {101¯0} family are missing for the Si atoms in the epilayer but do exist for the Er atoms in the same epilayer. The reason for this drastic difference is explained by the separate {101¯0} planes and the different steering potential of the Si and Er atoms in ErSi1.7. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361516
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  • 3
    Electronic Resource
    Electronic Resource
    Growth and properties of ion beam synthesized Si/CoxNi1−xSi2/Si(111) structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1201-1203 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial CoxNi1−xSi2 layers with good crystalline quality (χmin=3.5%) have been formed by ion beam synthesis. For a sample with x=0.66, we found that this ternary silicide layer contains 11% type B and 89% type A orientation. The transmission electron microscopy investigation reveals that the type B component is mainly located at the interfaces and with a thickness of only a few monolayers. X-ray diffraction studies of the sample show that the strain of the type B component is smaller than that of the type A and is probably the reason for such a unique distribution of the type B component in the epilayer. Rutherford backscattering-channeling, Auger electron spectroscopy, transmission electron microscopy, and x-ray diffraction have been used in this study.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356476
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  • 4
    Electronic Resource
    Electronic Resource
    Structural characterization of ion-beam synthesized NiSi2 layers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1707-1712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NiSi2(111) and NiSi2(100) layers with good crystalline quality have been formed by ion-beam synthesis. An unusual Ni atom distribution showing two completely separated layers during a single implantation step has been observed by Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). The orientation, strain, and stiffness of the NiSi2 layers have been studied by RBS/channeling, x-ray diffraction, and TEM. The results show that the continuous NiSi2 layers have type-A orientation with a parallel elastic strain larger than the theoretical value of 0.46% for pseudomorphic growth. The perpendicular strain of the NiSi2(111) layers is apparently smaller than that of NiSi2(100) layers, indicating a higher stiffness in the 〈111〉 direction. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360268
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  • 5
    Electronic Resource
    Electronic Resource
    Molecular characterization and pathogenicity of a grouper iridovirus (GIV) isolated from yellow grouper, Epinephelus awoara (Temminck & Schlegel) (2002)
    Oxford UK : Blackwell Science Ltd.
    Journal of fish diseases 25 (2002), S. 0 
    Details
    ISSN: 1365-2761
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: Molecular characterization was carried out on an iridovirus isolated from yellow grouper, Epinephelus awoara. The major capsid protein (MCP) gene was located, sequenced and compared with homologous genes from other iridoviruses. The nucleotide sequence is 1392 bases long and contains a single open reading frame beginning at an ATG codon from the 5′ end and terminating at a TAA codon at the 3′ end. The open reading frame encodes a protein of 463 amino acids with a predicted molecular weight of 50 272 Da. Pairwise amino acid alignments detected a high degree of sequence identity between grouper iridovirus (GIV) MCP and the homologous genes of other iridoviruses. The MCP gene of GIV was most similar to the MCP gene from frog virus 3 (FV3) with 70% nucleotide and 73% amino acid sequence identity. The predicted molecular weight of the protein of this gene is comparable with the apparent weight obtained by SDS–PAGE. Pathogenicity of the GIV was investigated in yellow grouper by intraperitoneal injection of 107 and 104 TCID50 virus. Cumulative mortalities reached 100% within 11 and 25 days post-infection, respectively, while no grouper died in the control group. The molecular studies demonstrated that GIV is a member of the genus Ranavirus.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2761.2002.00343.x
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  • 6
    Electronic Resource
    Electronic Resource
    Two iridovirus-susceptible cell lines established from kidney and liver of grouper, Epinephelus awoara (Temminck & Schlegel), and partial characterization of grouper iridovirus (2000)
    Oxford, UK : Blackwell Science Ltd
    Journal of fish diseases 23 (2000), S. 0 
    Details
    ISSN: 1365-2761
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: Two iridovirus-susceptible cell lines were established and characterized from grouper Epinephelus awoara kidney and liver tissues. These cell lines have been designated GK and GL, respectively. The cells multiplied well in Leibovitz's L-15 medium, supplemented with 10% foetal bovine serum, at temperatures between 20 and 32 °C, and have been subcultured more than 120 times, becoming continuous cell lines. The cell lines consist of a heterogeneous mixture of fibroblastic and epithelial cells. The viability of cells, stored frozen in liquid nitrogen (−196 °C), was 95% after 1 year. Chromosome morphologies of GK and GL cells were homogeneous. Both cell lines were susceptible to grouper iridovirus, and yielded high titres of up to 108 TCID50 mL−1. In addition, both cell lines effectively replicated the virus, which could be purified to homogeneity by cesium chloride gradient centrifugation. Electron microscopy studies showed that purified virus particles were 170±10 nm in diameter, and were hexagonal in shape. Virus-infected cells showed an abundance of virus particles inside the cytoplasm. These results show that the GK and GL cell lines effectively replicate grouper iridovirus, and can be used as a tool for studying fish iridoviruses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2761.2000.00247.x
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  • 7
    Electronic Resource
    Electronic Resource
    Crystal structure characterization of ion-beam-synthesized CoxY1−xSi1.7 silicide (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6929-6931 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial ternary CoxY1−xSi1.7 silicide (x〉0.27) has been formed by Co implantation into YSi1.7/Si(111). The formation of this compound is confirmed by an x-ray symmetric θ–2θ scan. However, the θ–2θ scan alone cannot discriminate between the possible phases (tetragonal, orthorhombic, or hexagonal) of this compound. On the other hand, Rutherford backscattering (RBS)/channeling confirms that this silicide is hexagonal and that its azimuthal orientation is CoYSi1.7[0001]//Si[111] and CoYSi1.7{112¯0}//Si{110}. In addition, the lattice constants of the ternary silicide aepi=0.3989 nm (which means that the lattice mismatch is 〉3.9% relative to the Si substrate) and cepi=0.3982 nm have been determined by RBS/channeling and x-ray diffraction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370108
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  • 8
    Electronic Resource
    Electronic Resource
    Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 365-367 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An InGaN layer was grown by metalorganic chemical vapor deposition on a sapphire (0001) substrate using a thick (〉2.2 μm) GaN intermediate layer. The In composition, which cannot be unambiguously determined by x-ray diffraction (XRD) or by photoluminescence, was determined by Rutherford backscattering (RBS). The perpendicular and parallel elastic strain of the In0.18Ga0.82N layer, e⊥=+0.21% and e(parallel)=−0.53%, respectively, were derived using a combination of XRD and RBS/channeling. The small ratio |e⊥/e(parallel)|=0.40 indicates that the In0.18Ga0.82N layer is much stiffer in the c-axis direction than in the a-axis direction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123032
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  • 9
    Electronic Resource
    Electronic Resource
    Channeled ion beam synthesis of heteroepitaxial Nd0.32Y0.68Si1.7 layers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2412-2414 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial Nd0.32Y0.68Si1.7 layers with good crystalline quality (χmin of Nd and Y is 3.5% and 4.3%, respectively) have been prepared by high dose 65 keV Y and 80 keV Nd implantation into a Si(111) substrate using channeled ion beam synthesis. Although the disilicide of Nd only exists in a tetragonal or an orthorhombic phase which cannot be grown epitaxially on a Si(111) substrate, our results show that the addition of Y to the Nd–Si system forces the latter into a hexagonal structure. Rutherford backscattering/channeling and x-ray diffraction studies reveal that the lattice parameters of the Nd0.32Y0.68Si1.7 epilayer are aepi=0.3915 nm and cepi=0.4152 nm and that the epilayer is stable up to 950 °C. Annealing at 1000 °C results in partial transformation into other unidentified phases. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121370
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  • 10
    Electronic Resource
    Electronic Resource
    Ion beam synthesis of ternary phase CoFe-silicide in (111) silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 986-988 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A transmission electron microscopy (TEM) investigation is presented of ion beam synthesized buried CoFe-silicide prepared by sequential equal-dose implantations of both metals. The TEM analysis shows strong evidence for the formation of a metastable ternary Co0.5Fe0.5Si2 phase during the implantation. Annealing of these structures at 1000 °C results in the formation of a continuous buried layer, but phase separation occurs into B-oriented CoxFe1−xSi2 and twinned α-FexCo1−xSi2 (both with x close to 1). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114967
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