ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An unusual Ni distribution with two completely separated buried and surface silicide layers has been observed after Ni ion implantation in Si(111) kept at a temperature of 300 °C, with a dose of 1.1×1017/cm2 and at a fixed energy of 90 keV. RBS/channeling, AES, and cross-sectional TEM have been used to study this phenomenon as a function of the substrate temperature and Co co-implantation. A model is presented, based on the diffusion of the transition metal, the defect annealing during the implantation, and the gettering power of the surface and the end of range defects.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109999
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