Electronic Resource
Vanhellemont, J.
;
Bender, H.
;
Wu, M. F.
;
[et al.]
De Wachter, J.
;
Hendrickx, P.
;
Pattyn, H.
;
Van Bavel, A. M.
;
Langouche, G.
;
Maenhoudt, M.
;
Bruynseraede, Y.
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 2795-2797
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The formation and distribution of NiSi2 in (111) silicon by Ni-ion implantation with a fluence of 1.1×1017 cm−2 and an energy of 90 keV is studied as a function of the temperature during implantation. For temperatures below 200 °C, a buried layer of NiSi2 precipitates is formed. Increasing the temperature gradually from 200 to 350 °C leads first to the formation of a double buried NiSi2 layer which with increasing temperature evolves into an epitaxial NiSi2 surface layer. A tentative model to explain for the observed anomalous behavior is presented.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109212
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