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  • 1
    Digitale Medien
    Digitale Medien
    X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5713-5717 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: ErSi1.7 layers with high crystalline quality (χmin of Er is 1.5%) have been formed by 90 keV Er ion implantation to a dose of 1.6×1017/cm2 at 450 °C using channeled implantation. The perpendicular and parallel elastic strain e⊥=−0.94%±0.02% and e(parallel)=1.24%±0.08% of the heteroepitaxial erbium silicide layers have been measured with symmetric and asymmetric x-ray reflections using a double-crystal x-ray diffractometer. The deduced tetragonal distortion eT(XRD)=e(parallel)−e⊥ =2.18%±0.10%, which is consistent with the value eT(RBS)=2.14±0.17% deduced from the Rutherford backscattering and channeling measurements. The quasipseudomorphic growth of the epilayer and the stiffness along a and c axes of the epilayer deduced from the x-ray diffraction are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363623
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  • 2
    Digitale Medien
    Digitale Medien
    Comprehensive Rutherford backscattering and channeling study of ion-beam-synthesized ErSi1.7 layers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6920-6925 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Heteroepitaxial ErSi1.7 layers with excellent crystallinity (χmin of Er is 1.5%) have been prepared by high-dose 90 keV Er implantation into a Si(111) substrate using channeled implantation. Such an ErSi1.7/Si system offers a rare opportunity to study comprehensively the structure, orientation, and strain using Rutherford backscattering spectrometry and channeling analysis. We found that the minimum yield and width of the [0001] dip of the Er atoms are quite different from that of the Si atoms in the silicide layer. It is confirmed that the azimuthal orientation of the hexagonal ErSi1.7 layer to the cubic Si substrate is ErSi1.7 [0001] (parallel) Si[111] and ErSi1.7 {112¯0} (parallel) Si {110}, and that the epilayer is compressively strained. Besides, by using the angular scan and image scan, we reveal that the dips of the {101¯0} family are missing for the Si atoms in the epilayer but do exist for the Er atoms in the same epilayer. The reason for this drastic difference is explained by the separate {101¯0} planes and the different steering potential of the Si and Er atoms in ErSi1.7. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.361516
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  • 3
    Digitale Medien
    Digitale Medien
    Structural characterization of ion-beam synthesized NiSi2 layers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1707-1712 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: NiSi2(111) and NiSi2(100) layers with good crystalline quality have been formed by ion-beam synthesis. An unusual Ni atom distribution showing two completely separated layers during a single implantation step has been observed by Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). The orientation, strain, and stiffness of the NiSi2 layers have been studied by RBS/channeling, x-ray diffraction, and TEM. The results show that the continuous NiSi2 layers have type-A orientation with a parallel elastic strain larger than the theoretical value of 0.46% for pseudomorphic growth. The perpendicular strain of the NiSi2(111) layers is apparently smaller than that of NiSi2(100) layers, indicating a higher stiffness in the 〈111〉 direction. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360268
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  • 4
    Digitale Medien
    Digitale Medien
    Growth and properties of ion beam synthesized Si/CoxNi1−xSi2/Si(111) structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1201-1203 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Heteroepitaxial CoxNi1−xSi2 layers with good crystalline quality (χmin=3.5%) have been formed by ion beam synthesis. For a sample with x=0.66, we found that this ternary silicide layer contains 11% type B and 89% type A orientation. The transmission electron microscopy investigation reveals that the type B component is mainly located at the interfaces and with a thickness of only a few monolayers. X-ray diffraction studies of the sample show that the strain of the type B component is smaller than that of the type A and is probably the reason for such a unique distribution of the type B component in the epilayer. Rutherford backscattering-channeling, Auger electron spectroscopy, transmission electron microscopy, and x-ray diffraction have been used in this study.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356476
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  • 5
    Digitale Medien
    Digitale Medien
    Crystal structure characterization of ion-beam-synthesized CoxY1−xSi1.7 silicide (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6929-6931 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Heteroepitaxial ternary CoxY1−xSi1.7 silicide (x〉0.27) has been formed by Co implantation into YSi1.7/Si(111). The formation of this compound is confirmed by an x-ray symmetric θ–2θ scan. However, the θ–2θ scan alone cannot discriminate between the possible phases (tetragonal, orthorhombic, or hexagonal) of this compound. On the other hand, Rutherford backscattering (RBS)/channeling confirms that this silicide is hexagonal and that its azimuthal orientation is CoYSi1.7[0001]//Si[111] and CoYSi1.7{112¯0}//Si{110}. In addition, the lattice constants of the ternary silicide aepi=0.3989 nm (which means that the lattice mismatch is 〉3.9% relative to the Si substrate) and cepi=0.3982 nm have been determined by RBS/channeling and x-ray diffraction. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.370108
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  • 6
    Digitale Medien
    Digitale Medien
    Aligned and twinned orientations in epitaxial CoSi2 layers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 135-137 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Heteroepitaxial CoSi2 layers have been made by ion beam synthesis and solid phase epitaxy in Si〈111〉 substrates. Using the x-ray rocking curves of the asymmetric (331) reflections we are able to determine very accurately the relative amount of aligned (type A) and twinned (type B) CoSi2 in samples with different thicknesses. It is shown that for epilayers thinner than 360 A(ring), the relative amount of type A CoSi2 decreases from 100% to 30%.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104212
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  • 7
    Digitale Medien
    Digitale Medien
    Antiparallel crystal orientation in CoSi2 epitaxial bilayers formed by ion implantation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1973-1975 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Orientation and strain in buried CoSi2 layers have been studied in a Si/CoSi2/Si/CoSi2/Si(111) structure. Using a well defined implantation and annealing procedure, a unique combination of CoSi2 epitaxial layers was obtained having the same strain but an opposite orientation. These novel structures are interesting for epitaxial growth studies and may have important device applications.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104148
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  • 8
    Digitale Medien
    Digitale Medien
    Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 365-367 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An InGaN layer was grown by metalorganic chemical vapor deposition on a sapphire (0001) substrate using a thick (〉2.2 μm) GaN intermediate layer. The In composition, which cannot be unambiguously determined by x-ray diffraction (XRD) or by photoluminescence, was determined by Rutherford backscattering (RBS). The perpendicular and parallel elastic strain of the In0.18Ga0.82N layer, e⊥=+0.21% and e(parallel)=−0.53%, respectively, were derived using a combination of XRD and RBS/channeling. The small ratio |e⊥/e(parallel)|=0.40 indicates that the In0.18Ga0.82N layer is much stiffer in the c-axis direction than in the a-axis direction. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123032
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  • 9
    Digitale Medien
    Digitale Medien
    Importance of channeled implantation to the synthesis of erbium silicide layers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3886-3888 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: 166Er atoms were implanted with an energy of 70 to 90 keV and doses of 0.8 to 2.0×1017/cm2 into Si(111) substrates at temperatures ranging from 450 to 530 °C. We found that using conventional nonchanneled implantation at energies of ∼90 keV, it is impossible to form a continuous ErSi1.7 layer. At best, after annealing, a discontinuous ErSi1.7 layer with poor crystalline quality (χmin=40%) is obtained. On the contrary, using channeled implantation, a continuous epitaxial ErSi1.7 layer with very good crystalline quality can be formed; a lowest χmin value of 1.5% for a surface ErSi1.7 layer has been obtained. The origin of this different behavior is explained. Our results show that for synthesizing continuous ErSi1.7 layers with good quality using ion beam synthesis at energies around 90 keV, channeled implantation is indispensable. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115306
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  • 10
    Digitale Medien
    Digitale Medien
    Crystalline quality and phase stability of hexagonal GdSi1.7 layers formed by channeled ion-beam synthesis (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3260-3262 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Previous reports show that, among all rare-earth silicides, GdSi1.7 is the most difficult one to grow epitaxially with a good crystalline quality on a Si substrate. However, this letter shows that by using channeled implantation, a continuous GdSi1.7 layer with good crystalline quality (χmin=10%) can be formed by implantation of 90 keV Gd ions in Si(111). Besides, the hexagonal phase of the GdSi1.7 layer is stable up to a temperature of 850 °C for 30 min, which is much more stable than previously reported. After annealing at temperatures ≥900 °C for 30 min, the hexagonal GdSi1.7 phase transforms into the orthorhombic GdSi2 phase. Rutherford backscattering/channeling, transmission electron microscopy, and x-ray diffraction are used in this study. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116567
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