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  • 1995-1999  (2)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5713-5717 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ErSi1.7 layers with high crystalline quality (χmin of Er is 1.5%) have been formed by 90 keV Er ion implantation to a dose of 1.6×1017/cm2 at 450 °C using channeled implantation. The perpendicular and parallel elastic strain e⊥=−0.94%±0.02% and e(parallel)=1.24%±0.08% of the heteroepitaxial erbium silicide layers have been measured with symmetric and asymmetric x-ray reflections using a double-crystal x-ray diffractometer. The deduced tetragonal distortion eT(XRD)=e(parallel)−e⊥ =2.18%±0.10%, which is consistent with the value eT(RBS)=2.14±0.17% deduced from the Rutherford backscattering and channeling measurements. The quasipseudomorphic growth of the epilayer and the stiffness along a and c axes of the epilayer deduced from the x-ray diffraction are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363623
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Si-based optoelectronic devices and their attractive applications (1999)
    Springer
    Czechoslovak journal of physics 49 (1999), S. 837-848 
    Details
    ISSN: 1572-9486
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The semiconductor photonics and optoelectronics which have a great significance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent research carried out in our laboratory in enhanced luminescence from low dimensional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped Si x N y /Si. A ring shape waveguide structure, used to promote the effective absorption coefficient in PIN photodetector for 1.3 μm wavelength and a resonant cavity enhanced structure, used to improve the quantum efficiency and response in heterostructure photo-transistor (HPT), are also proposed in this paper.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1021253510726
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    Paper (German National Licenses)
    Fulltext
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