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  • 1
    Electronic Resource
    Electronic Resource
    Polarization-switchable microchip lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2746-2748 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a novel technique, we are able to controllably switch the polarization of microchip lasers in under 5 μs. The technique is applicable to a broad variety of lasers and theoretical modeling indicates that switching rates of several megahertz are possible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105229
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical, crystallographic, and optical properties of ArF laser modified diamond surfaces (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2295-2297 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulses of 193 nm radiation from an ArF laser with energies exceeding 0.5 J/cm2 have been shown to modify 40–60 nm thick layers of {100} and {110} oriented diamond surfaces. These layers exhibit highly anisotropic electrical and optical properties which have principal in-plane axes along the 〈110〉 directions. The minimum resistance is (4–10)×10−4 Ω cm, and minimum in the optical transmittance and maximum in the reflectance occur when the electric field vector of the incident polarized light is aligned along the low resistance direction. Transmission electron microscopy indicates that the modified layer primarily consists of unidentified graphite-like carbon phases embedded in diamond. The first-order electron diffraction spots correspond to lattice spacings of 0.123, 0.305, and 0.334 nm. The modified layer is stable at 1800 °C, forms ohmic contacts to type IIb diamond, and supports epitaxial diamond growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102042
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Calculated room-temperature threshold current densities for the visible II-VI ZnCdSe/ZnSe quantum-well diode lasers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2899-2901 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature threshold current densities for the visible II-VI ZnCdSe/ZnSe semiconductor quantum-well diode lasers have been calculated using a simple model for the quantum-well gain and spontaneous radiative recombination rate. These results are compared with those for the infrared III-V GaAs/GaAlAs quantum-well lasers, calculated using the same model. By tailoring the epitaxial structure for optimum optical confinement, cw room-temperature operation of the ZnCdSe/ZnSe quantum-well lasers should be possible with threshold current densities as low as 400 A/cm2 for a 1-mm cavity length and uncoated laser facets, assuming the problem of ohmic contacts to the epitaxial structure is resolved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109190
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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