ISSN:
1432-0630
Keywords:
PACS: 81.15; 68.55; 78.30
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. Ge-rich Ge1−x−ySixCy alloys have been grown on Si (100) substrates by plasma-enhanced rapid thermal chemical vapor deposition. It is found that there is a strong suppressive effect of C on the Ge composition and the growth rate. A possible mechanism for the suppressive effect is proposed. After calculations of atomic configuration, we obtain the relationship between the degree of suppression and the Ge/C atomic ratio. From the calculation results, a saturation tendency of the suppressive effect is expected with increasing Ge concentration in the growth of Ge1−x−ySixCy alloys.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390051069
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