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  • Articles: DFG German National Licenses  (289)
  • Electronic Resource  (289)
  • 1
    Electronic Resource
    Electronic Resource
    Effect of Seizures Induced by Intra-Amygdaloid Kainic Acid on Kainic Acid Binding Sites in Rat Hippocampus and Amygdala (1986)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 47 (1986), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: [3H]Kainic acid binding sites with a slow dissociation rate in the rat limbic system were investigated in detail. Extensively washed membranes prepared from the hippocampal formation and from the region comprising the amygdala and the piriform cortex yielded nonlinear Scatchard plots. Microdissection showed that the high-affinity component (affinity constant around 1 nM) was present in the hippocampal CA3 region (4.2 fmol/mg wet tissue) and the amygdaloid complex (4.6 fmol/mg wet tissue), whereas the remaining part of the hippocampal formation and the piriform lobe contained the low-affinity component (affinity constant 5–20 nM; 11.6 and 11.3 fmol/mg wet tissue, respectively). In the lateral + medial septum we detected only the low-affinity component. Severe limbic seizures, induced by unilateral injection of 0.7 or 0.8 μg kainic acid in 0.3 μl of phosphate-buffered saline into the amygdala, reduced kainic acid binding sites in the ipsilateral amygdala and CA3 region. The decline of kainic acid binding sites in the injected amygdala was followed by a similar effect in the contralateral amygdala (“mirror focus”) and later by a moderate loss also in the contralateral CA3 region. Kainic acid receptor autoradi-ography demonstrated that binding sites were lost from the stratum lucidum in hippocampus. Septal lesion had no effect on kainic acid binding sites in the hippocampus. Comparison with previous results on the histopathological changes after this lesion shows that high-affinity kainic acid binding sites are preferentially located on neurons that undergo selective degenerations after severe kainic acid-induced seizures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1986.tb00671.x
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  • 2
    Electronic Resource
    Electronic Resource
    Depth inhomogeneity of porous silicon layers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2990-2993 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The two possible causes of depth inhomogeneities of the microstructure of porous silicon are changes in the HF concentration with depth and a varying chemical etching rate of the porous silicon layer. During anodization chemical etching will become important for microporous silicon — e.g. p-porous silicon — due to the large internal surface area, especially at long etching times. On the other hand, a considerable decrease of the HF concentration will occur during etching with high current densities to produce p+-porous silicon with high porosities. We have investigated the depth inhomogeneity of porous silicon layers by spectroscopic ellipsometry, Raman spectroscopy and photoluminescence measurements. From a line shape analysis of the Raman signal a size distribution of nanocrystals is deduced. For p-porous silicon smaller nanocrystals are found near the surface of the layer; for p+-porous silicon etched with high current densities smaller nanocrystals are found near the porous silicon/substrate interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363156
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  • 3
    Electronic Resource
    Electronic Resource
    Shortened REM Latency: Consequence of Psychological Strain? (1987)
    Oxford, UK : Blackwell Publishing Ltd
    Psychophysiology 24 (1987), S. 0 
    Details
    ISSN: 1469-8986
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine , Psychology
    Notes: Previous research has demonstrated that in healthy subjects sit uat ional strain may provoke not only sleep disturbances characteristic of depression (e.g., shortened REM latencies), but also alterations in dream content. Nevertheless, there are some controversial results. The aim or our study was to clarify these inconsistencies by developing a design which might avoid some methodological problems which were present in some of these previous studies. Eleven male subjects slept in the laboratory for 7 consecutive nights. During 1 evenings they saw a stressful and a neutral movie in randomized order. The subsequent nights included REM sleep awakenings for the purpose of dream collections. Whereas the subjects were demonstrably affected by the disturbing films, the patterns of subsequent sleep remained unchanged. In contrast manifest content of the initial dreams were clearly altered. Whereas the modes of dreaming were quite different within post-stress nights, mood was unproved the next morning in all subjects. The results are discussed within the framework of several prevailing concepts about sleep, dreams, and psychological strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1469-8986.1987.tb00293.x
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  • 4
    Electronic Resource
    Electronic Resource
    The effect of aluminum gate thickness on charge trapping in metal-oxide-semiconductor devices (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4821-4826 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-oxide-semiconductor devices with variable aluminum gate thickness were electrically stressed by constant-current Fowler–Nordheim tunneling, until intrinsic oxide breakdown was achieved. I-V and C-V measurements were used to detect oxide-bulk trapping and interface-state generation rates during the stressing process. It was found that these rates were affected by the Al thickness only in the initial stages of the stressing, and that these rates are not a simple monotonic function of the Al gate thickness, but reach their maximum value between 500 and 1000 A(ring) of Al thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343797
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  • 5
    Electronic Resource
    Electronic Resource
    The orientation of the magnetization of thin films as determined by the Hall effect (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3816-3818 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Hall effect is a useful probe of the magnetization in thin metallic films since the signal is inversely proportional to the film thickness. Previously, the minimum in the coercivity, derived from the Hall hysteresis loop as a function of the angle of the applied field, has been used to determine the hard axis of magnetic thin films. A vibrating sample magnetometer can be used in this fashion if coherent rotation is the magnetization reversal mechanism. However, we show that even in the case of the Stoner–Wohlfarth model, the minimum of the Hall coercivity does not coincide with the hard axis. We propose an alternative method for determining the easy axis, which is independent of the magnetization reversal mechanism and does not require measuring the entire hysteresis loop. In addition, since for an arbitrary orientation of the applied field the measured Hall voltage will contain components due to magnetoresistance as well as the Hall effect, it is possible to extract a measure of the in-plane and perpendicular magnetization. Using this information, we derive a method of producing vector plots that show the magnitude and direction of the magnetization as a function of applied field for various applied-field orientations. Examples using CoCr and TbFe will be presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338606
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  • 6
    Electronic Resource
    Electronic Resource
    A Raman study of Au/Te/Au/GaAs (100) ohmic contacts (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 739-743 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ohmic contacts produced by high-energy pulsed laser beam alloying Au/Te/Au/n-GaAs are investigated by micro Raman spectroscopy. The results are compared to those from furnace annealed ohmic contacts. For the furnace as well as for the laser annealed ohmic contacts, no evidence for a doping of the contact region is found in the Raman spectra. The presence of a highly disordered GaAs surface layer is observed for both types of contacts. In addition, after furnace processing a Ga2Te3 layer is formed. These results are consistent with earlier Mössbauer studies. For the laser alloyed samples the results strengthen the role of a defective/disordered interface structure where conduction might occur by a resonant tunneling process involving localized gap states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351336
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of high-temperature anneal on interface states generation in stressed metal-oxide-semiconductor devices (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 598-600 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon gate metal-oxide-semiconductor transistors, fabricated with polycrystalline silicon leads, were repeatedly electrically stressed by constant-current Fowler–Nordheim tunneling cycles. After every stress cycle the devices were annealed for various time intervals at 950 °C. Capacitance-voltage measurements were used to detect stress-related interface-state generation rates and saturation values. It was found that although the stress-generated interface states are totally annealed by the thermal treatment, their generation rates and saturation values after anneal are a strong function of the anneal time, significantly exceeding the values of the fresh devices and inversely dependent on the anneal time. From the results it is concluded that a new type of latent interface-state sites is generated by the combination of tunneling stress and high-temperature annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104598
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  • 8
    Electronic Resource
    Electronic Resource
    Thymidine Hydroperoxides: Structural Assignment, Conformational Features, and Thermal Decomposition in Water (1994)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 116 (1994), S. 2235-2242 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00085a001
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  • 9
    Electronic Resource
    Electronic Resource
    Generation and anneal of a new kind of interface state in stressed and high-temperature annealed metal-oxide-semiconductor devices (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 186-188 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon (poly) gate metal-oxide-semiconductor (MOS) transistors were electrically stressed by constant-current tunneling. After the stress the devices were thermally annealed for variable times in the temperature range between 800 and 950 °C, and a second tunneling stress was performed. Capacitance-voltage (C-V) curve broadening and a charge pumping (CP) technique were used to detect interface state generation. It was found that the stress generated interface states are totally annealed by the thermal treatment. On the other hand, generation rates and saturation values, due to the second stress after annealing, exceed those of the fresh devices. Analysis of the generation process indicates that two types of interface states are generated: one, similar in its generation rate and saturation value to that of a fresh device, and another one, which is characterized by a higher generation rate and saturation value, is attributed to a new type of latent site. The density of this new type of latent interface states site decays exponentially with the annealing time. The annealing rate follows a temperature-dependent Arrhenius function. The anneal of this new type of interface state is characterized by an activation energy of 3.47 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106958
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  • 10
    Electronic Resource
    Electronic Resource
    On naevi and melanomas in dysplastic naevus syndrome patients (1993)
    Oxford, UK : Blackwell Publishing Ltd
    Clinical and experimental dermatology 18 (1993), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Cutaneous melanoma may occur as isolated, so-called 'sporadic’cases or in association with multiple atypical naevi and in familial clusters, in which case it is referred to as the familial dysplastic naevus syndrome (DNS).In this retrospective study (a) the number and body distribution of naevocytic naevi and (b) the body distribution of malignant melanoma (MM) in individuals with familial DNS were compared in order to study their association. In 45 patients with familial DNS aged 20–39 years naevus counts on trunk and lower extremities were compared with melanoma data and distributions from a second group of 43 patients from the same DNS families aged 12–66 years.Men had significantly more naevi of a size 〈inlineGraphic alt="geqslant R: gt-or-equal, slanted" extraInfo="nonStandardEntity" href="urn:x-wiley:03076938:CED248:ges" location="ges.gif"/〉 2 mm or 〈inlineGraphic alt="geqslant R: gt-or-equal, slanted" extraInfo="nonStandardEntity" href="urn:x-wiley:03076938:CED248:ges" location="ges.gif"/〉5 mm on the back than women (P=0.02). Women showed a tendency towards a greater number of naevi on the lower extremities than men, but in women no significant difference in naevi between the lower extremities and the back was found. The total number of naevi on the trunk and lower extremities in familial DNS patients was higher than that in the general population.In conclusion, it was found that predilection sites for melanoma in familial DNS patients of both sexes correspond with the distribution of naevi; in males naevi and melanoma counts and percentage distributions were higher on the back, in females both the back and the lower extremities were affected.These findings strongly suggest an association between naevus distribution and melanoma occurrence and sire in familial DNS, analogous to earlier reports on sporadic melanoma.1,2
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2230.1993.tb02179.x
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