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  • Articles: DFG German National Licenses  (95)
  • 2005-2009  (13)
  • 2000-2004  (82)
  • 1
    ISSN: 1432-2242
    Keywords: Key words Zea mays ; Pachytene chromosome ; Karyotype ; Repetitive DNA sequence ; Fluorescence in situ hybridization
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  A repetitive DNA sequence, ZmCR2.6c, was isolated from maize based on centromeric sequence CCS1 of the wild grass Brachypodium sylvaticum. ZmCR2.6c is 309 bp in length and shares 65% homology to bases 421–721 of the sorghum centromeric sequence pSau3A9. Fluorescence in situ hybridization (FISH) localized ZmCR2.6c to the primary constrictions of pachytene bivalents and to the stretched regions of MI/AI chromosomes, indicating that ZmCR2.6c is an important part of the centromere. Based on measurements of chromosome lengths and the positions of FISH signals of several cells, a pachytene karyotype was constructed for maize inbred line KYS. The karyotype agrees well with those derived from traditional analyses. Four classes of tandemly repeated sequences were mapped to the karyotype by FISH. Repeats 180 bp long are present in cytologically detectable knobs on 5L, 6S, 6L, 7L, and 9S, as well as at the termini and in the interstitial regions of many chromosomes not reported previously. A most interesting finding is the presence of 180-bp repeats in the NOR-secondary constriction. TR-1 elements co-exist with 180-bp repeats in the knob on 6S and form alone a small cluster in 4L. 26S and 5S rRNA genes are located in the NOR and at 2L.88, respectively. The combination of chromosome length, centromere position, and distribution of the tandem repeats allows all chromosomes to be identified unambiguously. The results presented form an important basis for using FISH for physical mapping and for investigating genome organization in maize.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 271-272 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A rf-driven discharge is used to produce a beam of metastable krypton atoms at the 5s(3/2)2 level with an angular flux density of 4×1014 s−1 sr−1 and most probable velocity of 290 m/s, while consuming 7×1016 krypton atoms/s. When operated in a gas-recirculation mode, the source consumes 2×1015 krypton atoms/s with the same atomic-beam output. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6928-6930 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetoresistance (MR) ratio is enhanced by 35% by inserting the nano-oxide layer (NOL) at the Ta/Co interface in the FeMn-based top spin valves (Ta/NOL/Co/Cu/Co/FeMn/Ta). The enhancement is attributed to specular reflection, resulting in a large resistance change and small sheet resistance. However, the formation of NOL at the interface of Ta/Co suppresses the (111) texture, resulting in small exchange fields. Top spin valves with NOLs show good thermal stability up to 200 °C annealing. The MR ratio is further increased after annealing at temperatures below 200 °C. Enhancement of the MR ratio by 61% can be achieved by annealing at 150 °C. For bottom spin valves (Ta/NiFe/FeMn/Co/Cu/NiFe/Ta), NOLs formed at FeMn/Co and NiFe/Ta interfaces increase MR ratios, but NOLs at Co/Cu or Cu/NiFe deteriorate the differential spin scattering and significantly reduce MR ratios. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 943-948 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An infrared photodetector that contains a superlattice structure and a blocking barrier was investigated. The photodetector shows advantages including a low operating voltage (〈0.7 V), wide detection bandwidth, flexible miniband engineering, and in particular, voltage-tunable spectral responsivity. The blocking barrier not only prohibits the dark current but also acts as a high-pass energy filter to tune the spectral responsivity. The zero background peak detectivity of our detector is 3.7×109 cm Hz0.5/W (9.7 μm) at −0.5 V and 2.2×1010 cm Hz0.5/W (6.7 μm) at −0.1 V. Since the spectral responsivity at different biases is independent, temperature sensing is feasible by taking the ratio of the measured photocurrent at different biases. A demonstration of temperature sensing by using our superlattice infrared photodetector with a blocking barrier is also shown in this article. Those results show the superlattice is a simple and efficient structure for the design of a multicolor infrared photodetector. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 960-968 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have derived the global band gaps for general two-dimensional (2D) photonic band gap (PBG) structures formed by square or triangular arrays of metal posts. Such PBG structures have many promising applications in active and passive devices at microwave, millimeter wave, and higher frequencies. A coordinate-space, finite-difference code, called the photonic band gap structure simulator (PBGSS), was developed to calculate complete dispersion curves for lattices for a series of values of the ratio of the post radius (r) to the post spacing (a). The fundamental and higher frequency global photonic band gaps were determined numerically. These universal curves should prove useful in PBG cavity design. In addition, for very long wavelengths, where the numerical methods of the PBGSS code are difficult, dispersion curves were derived for the transverse-magnetic (TM) mode by an approximate, quasi-static approach. Results of this approach agree well with the PBGSS code for r/a〈0.1. The present results are compared with experimental data for transverse-electric (TE) and TM mode PBG resonators built at Massachusetts Institute of Technology (MIT) and the agreement is found to be very good. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1887-1890 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present studies of the compositional dependence of the optical properties of AlxGa1−xN(0〈x〈0.22) alloys by modulation spectroscopy and photoluminescence. The yellow luminescence, which is well known in GaN and is generally assigned to shallow donor–deep acceptor pair recombination has also been observed in AlxGa1−xN. As aluminum concentration increases, the color of the band changes from yellow (2.2 eV) to blue (2.6 eV). The shift was less than that of the band gap. Together with previously published studies, it implies that the deep acceptor level is pinned to a common reference level to both materials, thus the deep level responsible for the yellow emission is used as a common reference level to determine the band alignment in AlxGa1−xN/GaN heterojunctions. Combining with the near-band-edge modulation spectra, the estimated ratio of conduction-to-valence band discontinuity is 65:35. Our results are close to the values obtained from PL measurements on Al0.14Ga0.86N/GaN quantum wells and those calculated by linear muffin-tin orbital method and linearized augmented plane wave method. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3725-3729 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optoelectronic properties of undoped ZnSe/ZnMgSSe multiple quantum wells (MQWs) grown by molecular beam epitaxy on (001) GaAs substrates have been investigated by photoluminescence, photoconductivity, and persistent photoconductivity (PPC) measurements. The features related to the band-to-band excitonic and impurity-related transitions of ZnSe/ZnMgSSe MQWs are observed and discussed. In addition, the parameters that describe the temperature dependence of the interband transition energy and broadening function of the excitonic feature are evaluated. PPC has been observed in undoped ZnSe/ZnMgSSe MQWs. The decay kinetics of the PPC effect can be described by a stretched-exponential function, Ippc(t)=Ippc(0)exp[−(t/τ)β], (0〈β〈1). Through the study of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different ZnSe well width, we identify that the carrier excitation from the defect level in ZnMgSSe barrier layer into the ZnSe well layer is the origin of the PPC effect in ZnSe/ZnMgSSe MQWs. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3800-3805 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photothermal ionization spectroscopy (PTIS) measurements were carried out on a free-standing, high purity and high quality 4H–SiC epitaxial layer at various temperatures. The two step photothermal ionization process is clearly reflected in the temperature dependence of the photoconductivity. The PTI spectrum at a temperature of 25.6 K exhibits one order of magnitude higher energy resolution than the infrared absorption spectra of 4H–SiC bulk material. It reveals five strong, well resolved electronic transition lines associated with the shallow nitrogen donor. The ionization energy of the shallow nitrogen donor is deduced to be 60.2±0.5 meV based on experimental results. Furthermore, PTI magnetospectroscopy measurements were performed to investigate the symmetry properties of these transitions in Faraday configuration. No linear Zeeman splitting is observed, however, these lines show a diamagnetic shift. It indicates that the excited states of the shallow nitrogen donor are nondegenerate at zero magnetic field, which is consistent with the fact that the effective mass tensor of 4H–SiC has three different diagonal components. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5-9 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Corrections to the capacitance analysis of liquid crystal displays with periodic interdigital electrodes are presented, accounting for the finite thickness of the liquid crystal (LC) cell gap. Conformal mapping calculations of the corrected equivalent dielectric constant for the LC material and glass substrate are carried out in terms of the aperture ratio, cell gap and LC effective dielectric constant. Departure from the infinite-cell-gap approximation occurs as the gap thickness approaches the electrode width, or the aperture ratio approaches unity. The capacitance–voltage characteristic curve obtained from the conformal mapping calculations is very close to that obtained from the two-dimensional simulations with less than 5% deviation. © 2000 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 117 (2002), S. 1409-1415 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We show that the method of factorizing the evolution operator to fourth order with purely positive coefficients, in conjunction with Suzuki's method of implementing time-ordering of operators, produces a new class of powerful algorithms for solving the Schrödinger equation with time-dependent potentials. When applied to the Walker–Preston model of a diatomic molecule in a strong laser field, these algorithms can have fourth order error coefficients that are three orders of magnitude smaller than the Forest–Ruth algorithm using the same number of fast Fourier transforms. Compared to the second order split-operator method, some of these algorithms can achieve comparable convergent accuracy at step sizes 50 times as large. Morever, we show that these algorithms belong to a one-parameter family of algorithms, and that the parameter can be further optimized for specific applications. © 2002 American Institute of Physics.
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