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  • 1
    Electronic Resource
    Electronic Resource
    In situ ellipsometric study of amorphous silicon/amorphous silicon-carbon interfaces (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3363-3365 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An ellipsometric study of the growth of hydrogenated amorphous silicon/hydrogenated amorphous silicon-carbon interfaces and multilayer structures is presented. Kinetic ellipsometry is used at a fixed wavelength to study the growth of the materials at the interface between the a-Si:H and a-Si1−xCx:H layers as a function of the carbon content. It is observed that for samples with carbon content below 36%, the a-SiC:H grows uniformly on top of the a-Si:H. However, as the carbon content is increased beyond this point, the growth of the alloy material becomes nonuniform. Various growth models were used to fit the experimental data and the best fits were obtained using a multilayer model of varying void fraction to describe the inhomogeneous growth. Multilayers were grown using a-Si:H and a-SiC:H. It was observed that for low carbon concentrations (x〈0.36), the successive layers of the multilayer structure are reproducible and the growth remains homogeneous for all the layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348534
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  • 2
    Electronic Resource
    Electronic Resource
    A real time study of the growth of microcrystalline silicon on transparent conducting oxide substrates (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5445-5449 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed real time ellipsometry study of the growth of microcrystalline silicon (μc-Si) films on transparent conducting oxide (TCO) substrates is presented. Indium tin oxide and ZnO substrates are compared. μc-Si films prepared either from a high power (SiH4,H2) plasma or by alternating the SiH4 and H2 plasmas (layer-by-layer technique) are considered. Insights into the mechanisms of the TCO/μc-Si interface formation are obtained. A strong chemical reduction of the TCO substrate is observed during the early stage of exposure to the (SiH4,H2) plasma. Then the ellipsometric measurements reveal an induction period of about 1 min before the nucleation of microcrystallites. μc-Si films deposited by the layer-by-layer technique display a different behavior, in particular the chemical interaction at the ZnO/μ-Si interface is not observed in this case.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350515
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  • 3
    Electronic Resource
    Electronic Resource
    An in situ ellipsometry study of amorphous silicon/amorphous germanium multilayers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 13-18 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an in-situ ellipsometric study of hydrogenated amorphous silicon(a-Si:H)/hydrogenated amorphous germanium (a-Ge:H) multilayer structures. We deposit multilayers structures with the thickness of the Si layer equal to that of the Ge layer and with thicknesses of 100 and 500 A(ring). We find that whereas the a-Ge:H grown on top of a-Si:H follows a uniform growth model, the initial stage of growth of a-Si:H on a-Ge:H must be modelled with a hemispherical nucleation model. These growth mechanisms are observed for both the case of the 100 A(ring) layers and the 500 A(ring) layers. We also find that there are no long-term effects of the deposition on the optical properties of the layers. This is observable visually in the cases where the thickness of the layers allow the real-time trajectories to reach a saturated value and thus guaranteeing the same starting ellipsometric point for the next layer. This assures us that each material at the beginning of the superlattice growth is the same as that grown at the end. The implication of the present analysis on quantum size effects of superlattices is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347750
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  • 4
    Electronic Resource
    Electronic Resource
    Transport critical current density and microstructure in extruded YBa2Cu3O7−x wires processed by zone melting (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 228-232 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2Cu3O7−x compounds were extruded into long wires with the diameter of 1 mm after sintering. The sintered wires were subsequently zone melted to develop a highly textured microstructure. Magnetization experiments at 77 K indicated a Jc value of 1×105 A/cm2 at 1 T. Transport measurements at 77 K showed a greatly enhanced field dependence of the critical current density. Transmission electron microscopy revealed an important grain-boundary feature which eliminated the weak-link behavior. Large amounts of dislocations have also been found in the zone-melted sample which may contribute to flux pinning in the system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347122
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  • 5
    Electronic Resource
    Electronic Resource
    In situ spectroellipsometry study of the nucleation and growth of microcrystalline silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4894-4898 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed in situ spectroellipsometry analysis of the nucleation and growth of μc-Si films deposited on c-Si substrate is presented. The deposition is analyzed up to a final thickness of 0.43 μm. In order to perform a precise analysis, various real-time trajectories recorded at different photon energies are studied. New insights into the growth mechanisms are obtained. The growth of μc-Si is described as an evolution of a dense material and microstructures. The dense phase consists of microcrystallites embedded in an amorphous tissue. The nucleation-coalescence mechanism of μc-Si is compatible with a columnar microstructural development during the early stage of the growth. Then a multilayer model is used to describe the formation of a surface roughness. The free surface of μc-Si is rough at a 100–200-A(ring) scale. This surface roughness strongly increases as a function of the deposited thickness. The various stages of the growth of μc-Si and a-Si:H are systematically compared. The growth of a-Si:H displays a more uniform behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349033
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  • 6
    Electronic Resource
    Electronic Resource
    High critical current density in grain-oriented bulk YBa2Cu3Ox processed by partial melt growth (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2606-2608 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A uniform grain-oriented microstructure was developed in 50-mm-long bar samples of bulk YBa2Cu3Ox prepared by a partial melt growth process. In sharp contrast to previous reports, the textured products contained only small amounts of second phases. The samples were dense and nearly free of porosity. Transport measurements showed that the textured samples could carry a critical current density greater than 4.4×104 A/cm2 at 77 K and 1.8 T. The possible effects of processing parameters on the superconducting properties of the tested materials are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104188
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  • 7
    Electronic Resource
    Electronic Resource
    Robust superconducting tapes based on Bi2Sr2Ca2Cu3O10−δ (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2895-2897 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A rugged conductor based on the Bi2Sr2Ca2Cu3O10−δ has been developed by dispersing Ag throughout the matrix on a micrometer scale. The Ag seems to effectively blunt crack tips and provides regions for plastic flow. The performance degrades relatively little with the strains of handling, soldering and quenching to 77 K. Tapes having a critical current density of 4,500 A/cm2 at 77 K and zero field will show over 20,000 A/cm2 at 4.2 K and zero field. At 20 T for the field perpendicular to the tape surface, these conductors show 2,800 A/cm2 at 4.2 K and 2,200 A/cm2 at 20 K. The critical current density falls roughly linearly with strain and decreases from about 22,000 A/cm2 at zero strain to about 10,000 A/cm2 at 1.0% bending strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105844
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  • 8
    Electronic Resource
    Electronic Resource
    VOLATILE FLAVOR COMPONENTS OF COCONUT MEAT (1970)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 35 (1970), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Gas, chromatographic and mass-spectral techniques were employed in the isolation and identification of the volatile-flavor components of coconut meat. 15 compounds were positively identified. Odors of authentic compounds were described. Both delta-C8, -C10 lactones and n-octanol were the major volatile components and responsible for the characteristic aroma of coconut meat. The contributions of other minor components to flavor and their significance were also described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1970.tb04802.x
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  • 9
    Electronic Resource
    Electronic Resource
    The effects of pyridine nucleotides and glycerol on lipid phosphorylation in rat liver mitochondria
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Lipids and Lipid Metabolism 202 (1970), S. 91-105 
    Details
    ISSN: 0005-2760
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0005-2760(70)90221-3
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  • 10
    Electronic Resource
    Electronic Resource
    Nucleotide reversal of mitochondrial repression in saccharomyces cerevisiae
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 41 (1970), S. 1579-1583 
    Details
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0006-291X(70)90568-1
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