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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2960-2963 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular-beam-epitaxial GaN layers change from strongly conductive (ρ(approximately-equal-to)10−2 Ω cm at 300 K) to semi-insulating (ρ(approximately-equal-to)106 Ω cm) as the N flux is increased. Layers grown at low fluxes show strong n-type conduction, with transport in the conduction band at high temperatures and in a shallow donor band at low temperatures. For layers grown at high N fluxes, the Hall coefficients become too small to measure, suggesting hopping conduction among deep centers. The temperature-dependent resistivity data are most consistent with multiphonon, rather than single-phonon, hopping. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4467-4478 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium nitride is a highly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Among the devices considered for high power generation is the ubiquitous field-effect transistors which require Schottky barriers for modulating the channel mobile charge. It is in this context that we have undertaken an investigation of likely metal-GaN contacts. Here we report on the electrical conduction and other properties of Pt–GaN Schottky diodes. These Schottky diodes were fabricated using n-GaN grown by the molecular beam epitaxy method. Both capacitance–voltage and current–voltage measurements have been carried out as a function of temperature to gain insight into the processes involved in current conduction. Based on these measurements, physical mechanisms responsible for electrical conduction at low and high voltages and temperatures have been suggested. Schottky barrier height determined from the current–voltage and capacitance–voltage measurements is close to 1.10 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4498-4502 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three series of NdxTbyFe1−x−y−zCoz films have been fabricated for their potential application in magneto-optical recording: (i) x=0–0.20, Tb was adjusted so that the coercivity at room temperature was 5–10 kOe; (ii) x+y=0.28–0.32 with x in the range of 0 to 0.25; and (iii) x+y=0.21–0.23 with x in the range of 0 to 0.17. These films have been characterized both optically and magneto-optically by Kerr hysteresis trace, variable angle of incidence ellipsometry, and normal angle of incidence Kerr spectroscopy. From these measurements, the optical constants (n and k), magneto-optical constants (Q1 and Q2), and maximum possible figure of merit (FOM) have been determined at wavelengths of 405, 546, and 633 nm. Results demonstrate that the magneto-optical behavior of NdTbFeCo films is sensitive to the concentration of both Nd and Tb in the film. For samples in the series (i), the addition of Nd into TbFeCo alloys was shown not to enhance their magneto-optic behavior at the short wavelengths. For samples in the series (ii) and (iii), the substitution of Nd improves the magneto-optical performance greatly at blue light. But at red and green wavelengths it has little effect on the magneto-optical properties in samples in the series (iii) or degrades in samples in the series (ii). The maximum enhancement in the FOM is about 25% at x∼10% for blue light. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3920-3924 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of anodic (NH4)2S passivation of n-GaAs Schottky diodes have been investigated. When these Schottky diodes are prepared on anodically treated n-GaAs in (NH4)2S solution, the Schottky barrier height is lowered by at least 200 meV, and the interface trap density is estimated to be 5.5×1012 cm−2 which is two orders less than that of the untreated sample. It is observed that the Schottky barrier height or the position of the Fermi level at the surface is not stable for samples treated with a small current density (∼83 μA/cm2), but is significantly stable for samples treated with a large current density (∼1 mA/cm2). The stability of passivation is sensitive to the photon energy of the excitation source. Although for a longer-wavelength (λ=514 nm) illumination the passivation is stable, for a shorter-wavelength (λ=325 nm) illumination, the passivation is unstable. The photoluminescence intensity is found to rapidly decay due to photon-assisted oxidation. As compared to the (NH4)2S dip treatment, the anodic (NH4)2S treatment improves the stability of passivation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 594-596 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The emission and reflection spectra of GaN have been investigated in the intrinsic region and the data have been interpreted in terms of the wurtzite crystal band structure. Three intrinsic exciton transitions have been observed, one associated with each of the valence bands. Exciton excited states associated with the two top valence bands were also observed. The exciton binding energies, the band-gap energies, and the exciton Bohr radii are all reported along with the dielectric constant and the spin-orbit and crystal-field parameters for GaN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 6205-6205 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 6415-6417 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The effects of deuteration on hole burning of aluminum phthalocyanine tetrasulfonate (APT) in glassy films of water is reported. Deuteration has no effect on the zero phonon hole width of the APT electronic transition, but a large effect on the hole burning kinetics. These effects are discussed in terms of the two level systems of glassy water. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5448-5451 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric Ba0.4Sr0.6TiO3 (BST) thin films grown on (001) MgO by pulsed laser deposition show a strong correlation between their structure and their microwave dielectric properties. Epitaxially grown BST films are observed by x-ray diffraction to be tetragonally distorted. The oxygen deposition pressure affects the magnitude of the tetragonal distortion (the ratio of in-plane and surface normal lattice parameters, D=a/c) of the deposited BST films. D varied from 0.996 to 1.004 at oxygen deposition pressure of 10–800 mTorr. The dielectric properties of BST films measured at microwave frequencies (1–20 GHz) exhibit an oxygen deposition pressure dependent dielectric constant (ε=100–600), and quality factor Q (1/tan δ=10–60). The BST film grown at the oxygen deposition pressure of 200 mTorr exhibits the highest figure of merit [% tuning in ε×Q0V, where % tuning is 100×(ε0−εb)/ε0, and ε0 and εb are dielectric constant at 0 and 80 kV/cm]. This corresponds to the film with the lowest distortion (D=1.001). The observed microwave properties of the films are explained by a phenomenological thermodynamic theory based on the strain along in-plane direction of the films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 550-560 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A computer simulation model of amorphous silicon solar cells using a Scharfetter and Gummel solution of Poisson's equation and Taylor and Simmons occupancy statistics for the dangling bond gap states (D states), has been developed. With a suitable choice of parameters, the numerical results for solar cell collection efficiency and dark and illuminated I-V characteristics agree well with experimental values. The model has been used specifically to study the influence of interface states at the TCO-p (transparent conductive oxide), p-i, i-n, and n-metal interfaces and to explain the beneficial role of a graded-band-gap layer at the p-i interface.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5371-5376 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented indium tin oxide (ITO) thin films were grown by pulsed-laser deposition (PLD) on glass and single-crystal yttria-stabilized zirconia (YSZ) substrates. The structural, electrical, and optical properties of these films were investigated as a function of oxygen partial pressure. Films were deposited at substrate temperature of 300 °C in mixed gases (12 mTorr of argon and 1–50 mTorr of oxygen) using a KrF excimer laser (248 nm and 30 ns full width at half maximum) at a fluence of 1.2 J/cm2. ITO films (300 nm thick), deposited by PLD on YSZ at 300 °C in a gas mixture of 12 mTorr of argon and 6 mTorr of oxygen, exhibit a low electrical resistivity (1.6×10−4 Ω cm) with a high transparency (∼74%) at 550 nm. ITO films deposited on both glass and YSZ substrates have been used as an anode contact in organic light-emitting diodes. A comparison of the device performance for the two substrates shows that the device fabricated on the ITO/YSZ has a higher external quantum efficiency than that of the device fabricated on the ITO glass.
    Type of Medium: Electronic Resource
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