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  • Electronic Resource  (23)
  • 2005-2009  (9)
  • 1985-1989  (14)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1891-1893 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect formation in dehydrated silica glasses was investigated using various excimer lasers with different energies. The ArF laser (6.4 eV) generates the E' center more effectively than the KrF laser (5.0 eV), while the XeCl laser (4.0 eV) generated no centers. Defect generation was found to be proportional to the square of the laser photon density, indicating that it occurs dominantly due to a two-photon process which makes band-to-band excitation possible. The E' center probably originated from oxygen-deficient centers. Contributions to the E' center formation from a process involving direct absorption at the sites of intrinsic defects in SiO2 glass were discussed on the basis of the excitation energy dependence and a comparison with the effect of a low-pressure mercury lamp.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 200-202 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The specific lattice location of Zn in CdTe single crystals has been investigated by ion-channeling methods combined with particle-induced x-ray emission. Observing the asymmetry effects of channeling dips around the [110] axis and analyzing the asymmetry factors for host atoms and doped Zn atoms, it is revealed that almost all Zn atoms occupy the Cd sublattice sites, and Zn-doped CdTe crystals grown by vertical Bridgman methods appear to be almost completely free from the segregation of doped Zn atoms.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5809-5815 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Residual Ga and As atoms in SiOx and SiNy dielectric films deposited on GaAs were investigated by Rutherford backscattering spectroscopy and particle-induced x-ray emission techniques. Both Ga and As atoms were detected in the films after high temperature heat treatment, and even in the films as-deposited. The magnitude of the residual atoms presumably out-diffused from GaAs substrates was of the order of 1×1019 /cm3. The concentration of Ga atoms prevails over that of As atoms in SiOx/GaAs systems as is generally known, and vice versa in SiNy/GaAs systems after heat treatment. Dynamic behavior of Ga and As atoms in the films as functions of annealing temperature and annealing time cannot be explained by a simple diffusion mechanism. A model is proposed that the damaged layer around the interface of the systems is responsible for the anomalous out-diffusion phenomena.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Abstract. Germination modes of lower seeds of cocklebur (Xanthium pennsylvanicum Wallr.) under different water stresses, prepared with mannitol solution, were examined in relation to gaseous factors. As the concentration of mannitol increased, germination was increasingly inhibited at a mode which was drawn by two straight lines having different slopes and meeting at an angle. One is a sharp line occurring at the lower concentrations of mannitol; the other is a gentle line occurring at higher concentrations of mannitol. The former reflected the growth response of axial tissues to mild water stress, whereas the latter reflected the growth response of cotyledonary tissues to severe water stress. The germination potential of cocklebur seeds increased with increasing temperature. Thus, the seeds were more resistant to water stress at higher than al lower temperatures. This increased germination potential under water stress resulted from the greater growth potential of axial tissues, but not cotyledonary tissues, at higher temperature. Increased O2 levels improved both the reduced axial and cotyledonary growth under water stress. Carbon dioxide predominantly enhanced axial growth under water stress, whereas C2H4 exclusively enhanced cotyledonary growth. Thus, these gases were effective in potentiating germination under water stress. When combined with each other, these gases caused more pronounced growth of the axial and cotyledonary tissues, leading to germination under more severe water stresses. Maximal axial and cotyledonary growth under water stress occurred in the simultaneous presence of CO2, C2H4 and O2, which allowed the germination at higher mannitol concentrations above 0.6 kmol m−3 From these results, it was suggested that cocklebur seeds would override water stress by depending upon both the Corresponding axial growth and the C2H4-responding cotyledonary growth.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Ichthyosis bullosa of Siemens (IBS, MIM 146800) is a unique congenital ichthyosis characterized by mild epidermal hyperkeratosis over flexural areas, blister formation and the development of superficially denuded areas of hyperkeratotic skin. It is clinically difficult to distinguish severe IBS from mild bullous congenital ichthyosiform erythroderma (BCIE, MIM 113800). In the current literature, 19 IBS families with keratin 2e (K2e) mutations have been reported, despite only five IBS families having been reported before the first identification of K2e mutation in 1994. We studied four patients from three Japanese IBS families. They had previously been misdiagnosed as having BCIE before the correct diagnosis was made after mutation detection. To detect the pathogenic mutations, we performed direct sequencing of the entire coding regions of KRT2E encoding K2e in the patients and healthy family members. K2e mutations, a 1469T→C transition (L490P) and a 1477G→A transition (E493K) within the conserved 2B helix termination motif of the rod domain were detected in the families and the definite diagnosis of IBS was made in the four cases. The present results indicate that IBS is not such a rare entity as was previously thought, and accurate diagnosis is now available by mutation analysis.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 344 (July 2007), p. 427-433 
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A multi-stage stamping process of one-piece automobile steel wheels from tubes wasdeveloped to decrease the loss of material for the blanking. In this process, the tube is nosed into acup with a central hole, and then the taper bottom and side wall of the cup are formed into disk andrim portions of the wheel, respectively. The tube is produced by bending a rectangular sheet into atube and by welding both edges of the bent sheet to prevent the loss of material for the blanking.The stamping sequence of the one-piece wheels was designed by finite element simulation. Thecentral hole of the cup was decreased to a desired diameter of the hub hole without buckling andwrinkling by a 5-stages nosing operation. The taper bottom of the cup was reversely drawn, andthen was flared without folding by 2 stages. The wall thickness of the formed wheel was thick andthin in the disk and rim portions, receptively, and thus the requirement of strength of wheels issatisfied. A one-piece wheel having a hub hole was successfully formed by the designed sequencein a miniature experiment
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 48 (1989), S. 177-180 
    ISSN: 1432-0630
    Keywords: 72.20H ; 43.25 ; 72.80E
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Time-dependent Hopf bifurcations in the current-voltage characteristics of piezoelectric semiconductor resonators were investigated experimentally. The switching transition between acoustic bistable states was observed under a quasi-static variation of applied voltage. The peculiar pulse responses of the resonant currents were observed when the rise-time of the pulses exceeded the eigen-period of the system. The existence of a metastable state in the dynamical Hopf bifurcation are discussed.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 539-543 (Mar. 2007), p. 3856-3862 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: This paper described an experimental study on the friction stir welding of dissimilarmetal between commercially pure titanium (CPTi) and magnesium alloy AZ31B (Mg). Butt-weldsproduced at various tool rotation speeds were evaluated by the observation of the weld surfaceappearance, X-ray radiographic test, tensile test, SEM and EDX analysis. The main results obtainedare as follows. Butt-joint welding of the CPTi plate to the Mg plate was easily and successfullyachieved. The ignition of Mg occurred during welding at the tool rotation speeds over 1200rpm.The fragments of CPTi existed in a continuous form in Mg matrix. The tool rotation speed of1200rpm attained the maximum tensile strength of a joint, which was about 75% of that of Mg basemetal. Fracture occurred at the weld interface in most joint. EDX analysis revealed that Al in theMg diffused into CPTi through the weld interface and MgO existed at the interface. It seems thatthe decrease in Al concentration in the Mg and MgO formation around the weld interface caused thelow tensile strength of the joints
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 539-543 (Mar. 2007), p. 3838-3843 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 561-565 (Oct. 2007), p. 1043-1046 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The aluminium alloy and mild steel sheets were joined with mechanical clinching.Deforming behaviour of the two sheets during the clinching was observed from finite elementsimulation and an experiment to avoid defects. The fracture of the upper sheet, necking andseparation are caused by the small upper sheet thickness in the thick total thickness, the small lowersheet thickness in the thick total thickness and the small lower sheet thickness, respectively. Thejoining range for the combination of the upper aluminium alloy sheet of and the lower steel sheet ofis larger than that of the reverse combination. The effect of the difference between the flow stressesof the two sheets on the deformation behaviour was examined
    Type of Medium: Electronic Resource
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