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  • 1
    Electronic Resource
    Electronic Resource
    Interlayer segregation of Cu atoms in Ta/NiFe/Cu/NiFe/FeMn/Ta spin-valve multilayers and its influence on magnetic properties (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3759-3763 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results show that the exchange coupling field (Hex) of NiFe/FeMn for Ta/NiFe/FeMn/Ta multilayers is higher than that for spin-valve multilayers Ta/NiFe/Cu/NiFe/FeMn/Ta. In order to find out the reason, the composition and chemical states at the surface of Ta(12 nm)/NiFe(7 nm), Ta(12 nm)/NiFe(7 nm)/Cu(4 nm), and Ta(12 nm)/NiFe(7 nm)/Cu(3 nm)/NiFe(5 nm) were studied using x-ray photoelectron spectroscopy. The results show that no elements from lower layers float out or segregate to the surface in the first and second samples. However, Cu atoms segregate to the surface of Ta(12 nm)/NiFe(7 nm)/Cu(3 nm)/NiFe(5 nm) multilayers, i.e., Cu atoms segregate to the NiFe/FeMn interface for Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers. We believe that the presence of Cu atoms at the interface of NiFe/FeMn is one of the important factors which causes the exchange coupling field (Hex) of Ta/NiFe/Cu/NiFe/FeMn/Ta to be weaker than that of Ta/NiFe/FeMn/Ta. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1450033
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  • 2
    Electronic Resource
    Electronic Resource
    The inhibitory effect of VitD3 on proliferation of keratinocyte cell line HACAT is mediated by down-regulation of CXCR2 expression (2003)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 28 (2003), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary Psoriasis is a disease characterized by inflammation and increased population of hyperproliferative keratinocytes. It is well known that chemokines and chemokine receptors, such as interleukin-8 and its receptors (CXCR1 and CXCR2), play important roles in the pathogenesis of psoriasis. So far, examination of CXCR2 expression in psoriatic lesional keratinocytes by FACS calibur has not been reported and whether VitD3 inhibits psoriatic lesional keratinocyte proliferation through down-regulation of CXCR2 expression has not been elucidated. In the present study, CXCR2 expression in psoriatic lesional keratinocytes and HACAT treated with VitD3 was detected by flow cytometry. The proliferative capacity of HACAT treated with VitD3 was assayed by MTT assay. The results showed that CXCR2 expression in psoriatic lesional keratinocytes was higher than that in normal human keratinocytes. At the correct concentration VitD3 could inhibit human keratinocyte proliferation and down-regulate CXCR2 expression in HACAT. The data demonstrate that the inhibitory effect of VitD3 on keratinocyte proliferation might be mediated by down-regulation of CXCR2 expression.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2230.2003.01269.x
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  • 3
    Electronic Resource
    Electronic Resource
    Manipulation of the equilibrium between diamond growth and renucleation to form a nanodiamond/amorphous carbon composite (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3307-3309 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Composite films of ∼10 nm nanodiamond particles embedded in an amorphous carbon matrix were formed using a double bias assisted hot filament chemical vapor deposition system with a feeding gas mixture of 1% CH4:99% H2. The structure was obtained via the equilibrium of a multistage process including: (1) bias enhanced nucleation of diamond in an amorphous carbon matrix, (2) growth of both amorphous carbon and diamond, (3) suppression of the diamond growth by the surrounding amorphous carbon matrix, and (4) bias enhanced renucleation of diamond on the new amorphous carbon boundaries. The work adds insight to the diamond nucleation and growth processes. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1476721
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2130-2132 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the characterization of thermally induced interdiffusion in InAs/GaAs quantum-dot superlattices with high-resolution x-ray diffraction and photoluminescence techniques. The dynamical theory is employed to simulate the measured x-ray diffraction rocking curves of the InAs/GaAs quantum-dot superlattices annealed at different temperatures. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness, and stress variations caused by interdiffusion are taken in account. It is found that the significant In–Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The diffusion coefficients at different temperatures are estimated. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314298
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  • 5
    Electronic Resource
    Electronic Resource
    Structural instability of 4H–SiC polytype induced by n-type doping (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2111-2113 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spontaneous formation of stacking faults in heavily nitrogen-doped 4H-polytype silicon carbide crystals have been observed by transmission electron microscopy (TEM). Faults were present in as-grown boules and additional faults were generated by annealing in argon at 1150 °C. All faults had identical structure consisting of six layers stacked in a cubic sequence as determined by high-resolution TEM, and were interpreted as a result of two Shockley partial dislocations gliding on two neighboring basal planes of SiC. It is argued that the energy of faulted 4H silicon carbide is lower than the energy of perfect heavily doped (n〉1×1019 cm−3) crystal at typical processing temperatures, thus providing a driving force for transformation. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1463203
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  • 6
    Electronic Resource
    Electronic Resource
    Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1810-1812 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature-dependent photoluminescence measurements have been carried out in zinc-blende InGaN epilayers grown on GaAs substrates by metalorganic vapor-phase epitaxy. An anomalous temperature dependence of the peak position of the luminescence band was observed. Considering thermal activation and the transfer of excitons localized at different potential minima, we employed a model to explain the observed behavior. A good agreement between the theory and the experiment is achieved. At high temperatures, the model can be approximated to the band-tail-state emission model proposed by Eliseev et al. [Appl. Phys. Lett. 71, 569 (1997)]. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403655
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  • 7
    Electronic Resource
    Electronic Resource
    Field-emission properties of multihead silicon cone arrays coated with cesium (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 877-879 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field emission from multihead silicon (Si) cones was substantially improved by cesium (Cs) coating. Increasing the Cs coating lowered the emission turn-on field (for 10 μA/cm2) from 25 V/μm to a saturated value of 13 V/μm, while the threshold field (for 10 mA/cm2) decreased by 30%, dropping from 27 V/μm for Si cones coated with 1.8 monolayers (ML) of Cs to a saturated value of 19 V/μm with 4.1 ML of Cs. The Cs-treated Si cones could give an emission current density that was three to ten times that delivered by bare Si cones. The work function reduced by a factor of 1.43 for Si cones coated with 4.9 ML of Cs with reference to the untreated Si cones. From the slope of Fowler–Nordheim plot, the field enhancement factor β was found to increase by a factor of 2.02 for Si cones coated with 2.5 ML of Cs and then reduce to 1.57 after the 4.9 ML of Cs deposition. Reduction of the factor β might occur because of a thick Cs layer, which could flatten the sharp cone features. Stability test showed that no current decay was observed at a current density of 0.8 mA/cm2 under a constant applied field of 16 V/μm during the 10 h investigation. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1446990
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  • 8
    Electronic Resource
    Electronic Resource
    Coherence–incoherence and dimensional crossover in layered strongly correlated metals (2002)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 417 (2002), S. 627-630 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The properties of an interacting electron system depend on the electron correlations and the effective dimensionality. For example, Coulomb repulsion between electrons may inhibit, or completely block, conduction by intersite electron hopping, thereby determining ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature00774
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  • 9
    Electronic Resource
    Electronic Resource
    Nanostructure Epitaxial diamond polytypes on silicon (2001)
    [s.l.] : Nature Publishing Group
    Nature 412 (2001), S. 404-404 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Carbon is unique in the variety of configurations it can adopt with itself and other elements. Here we show how ion beams can be used to nanostructure various diamond polytypes, epitaxially aligning them to a silicon substrate. The ready controllability of ion beams, which are already used to ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35086656
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  • 10
    Electronic Resource
    Electronic Resource
    An estimate of the effects of light travel times in the optical jets of SS433 (1983)
    Springer
    Astrophysics and space science 92 (1983), S. 161-164 
    Details
    ISSN: 1572-946X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The effect of the finite extent of the optically radiating region of SS433 is investigated. Light travel time effects are small, but a slightly improved fit to the observational data can be obtained with a dimension ofl o≃1015 cm for the optical jets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00653595
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