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  • Electronic Resource  (57)
  • 1995-1999  (54)
  • 1965-1969  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Quantitative nondestructive evaluation with ultrasonic method using neural networks and computational mechanics (1995)
    Springer
    Computational mechanics 15 (1995), S. 521-533 
    Details
    ISSN: 1432-0924
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract  This paper describes an inverse analysis method using hierarchical neural networks and computational mechanics, and its application to the quantitative nondestructive evaluation with the ultrasonic method. The present method consists of three subprocesses. First, by parametrically changing the location and size of a defect hidden in solid, elastic wave propagation in the solid is calculated with the dynamic finite element method. Second, the back-propagation neural network is trained using the calculated relationships between the defect parameters and the dynamic responses of solid surface. Finally, the trained network is utilized to determine appropriate defect parameters from some measured dynamic responses of solid surface. The accuracy and efficiency of the present method are discussed in detail through the identification of size and location of a defect hidden in solid.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00350265
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  • 2
    Electronic Resource
    Electronic Resource
    Design and manufacture of a 10-T superconducting wiggler magnet at TERAS : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1960-1963 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The 10-T wiggler is an iron-cored superconducting wiggler destined for Electrotechnical Laboratory's 800-MeV electron storage ring to enhance the available radiation. The design and manufacturing contract for this magnet was started in April 1990 and was preceded by a feasibility study. The major features of the magnet are described in the article. Also, the effect of the superconducting wiggler with high magnetic field on the stored electron beam has been simulated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145770
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  • 3
    Electronic Resource
    Electronic Resource
    Single bunch injection system of the storage ring NIJI-IV for free electron laser use (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2796-2800 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The system of single bunch injection (SBI) for the storage ring NIJI-IV was completed. The system was used for the injection of the short pulse beams from an electron gun into only one of the 16 rf buckets in the ring. On a compact storage ring, the multipulse beams in one pulse train can be stored into only one of many bunches by one injection. The optimum number of the grid pulse in one pulse train was determined to improve the storage efficiency and the storage current by one injection. The keeping time of the bump orbit was calculated by using the transfer matrices. The optimum pulse number obtained by the calculation is 2. In the SBI system, the number of grid pulses in one pulse train can be selected by the gate circuit. A snap off diode and a clip line are used to generate 2 ns grid pulses. The measured grid pulse was shorter than the longitudinal space 5.5 ns of the rf bucket with voltage of −80 V. The EIMAC Y-646B cathode-grid assembly is used as the electron source. It is expected that the injection system provides a higher peak current and easier free electron laser use operation in comparison with the rf-knockout system. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145557
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  • 4
    Electronic Resource
    Electronic Resource
    Photovoltage generation of Si/C60 heterojunction (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2798-2800 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photovoltage generation was observed for C60/Si heterojunction fabricated by the deposition of C60 thin film on Si substrate. Four types of Si substrates (two for p-type and two for n-type) were used. All junctions showed rectifying behaviors and photovoltage generation under illumination of Ar-ion laser. The highest value of the photovoltage was 0.40 V. From the saturated photovoltage values for four junctions, the Fermi level of C60 thin film was estimated to be located about 4.7 eV below the vacuum level. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361114
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  • 5
    Electronic Resource
    Electronic Resource
    Estimation of the interface states density of a Si/C60 heterojunction by frequency-dependent capacitance–voltage characteristics (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6246-6251 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance–voltage (C–V) characteristics of a Si/C60 heterojunction, i.e., a HF solution (7.3% HF+30% NH4F) treated Si surface interfaced solid crystal of C60 molecules, were measured while applying various ac frequencies. The entire C60 thin film and near-interface region of the Si wafer behaved as a depletion region, with the C–V curve showing two distinct regions: one above and one below a threshold bias voltage. Below the threshold, C–V characteristics were dependent on applied frequency, which suggests the presence of interface states that only affect capacitance at lower frequencies. This frequency dependence was analyzed by assuming a suitable equivalent circuit, and based on derived curve-fitting circuit parameters the interface states density was accordingly estimated to have a value as low as ∼1011/cm2 eV. Such a small density indicates that only a few lattice defects occur within the interface of the HF-treated Si surface and C60 crystal. Although no frequency dependence was observed above the threshold, the C–V characteristics were found to be dependent on the width of the depletion region in Si. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364438
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  • 6
    Electronic Resource
    Electronic Resource
    Examination of Si(100) surfaces treated by ultrapure water with 5 ppb dissolved oxygen concentration (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 682-684 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si(100) surfaces treated by ultrapure water with 5 ppb dissolved oxygen concentration after dipping in HF solution were examined by attenuated total reflection (ATR)–Fourier-transform infrared (FT-IR) spectroscopy, transmittance FT-IR, and reflection high energy electron diffraction (RHEED). FT-IR spectra and RHEED patterns depended on the rinsing time in the ultrapure water. The (111) and (110) facets appeared after rinsing for a long period of time (20–45 h) in 5 ppb dissolved oxygen concentration ultrapure water. It was suggested that the surface morphology depended on not only pH value but also the amount of etching. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115202
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  • 7
    Electronic Resource
    Electronic Resource
    Formation of diamond during passage of a shock wave in a copper/graphite powder: Formation process and numerical simulation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3131-3133 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A powder mixture of copper and graphite was dynamically shock-compressed by a rod-in-cylinder method. Structural characterization of the recovered specimen by transmission electron microscopy (TEM) showed the development of fine spherical diamond particles through shock-induced nuclei formation in the high pressure state and shock-assisted nuclei growth during unloading to ambient pressure via a solid–liquid–solid (SLS) phase transformation. A 2 μm large diamond particle was formed via a shock-induced martensitic path. Quantitative numerical simulation applying the two-dimensional computation code AUTODYN 2D was conducted to evaluate the pressure conditions during shock loading. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113627
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  • 8
    Electronic Resource
    Electronic Resource
    Infrared absorption of Li acceptors and shallow donors in ZnSe (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3480-3482 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using Fourier transform infrared spectroscopy, we have observed the absorption spectra of holes bound to acceptors in bulk ZnSe below 100 K. The absorption is assigned to hole transition of Li acceptors from the 1S3/2 ground state to the 2P3/2 excited state. The obtained transition energy of 72.9±0.1 meV is one order more precise than that obtained by photoluminescence measurements. In addition, absorption lines due to shallow donors are observed below 30 K, and the intensity is enhanced by excitation with a blue light emitting diode. The 1s–2p transition energies of three kinds of donors Al, Cl, and In are estimated at 18.96, 19.64, and 21.67 meV, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124134
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of tea polyphenols on histamine release from rat basophilic leukemia (RBL-2H3) cells: the structure–inhibitory activity relationship (1997)
    Oxford, UK : Blackwell Publishing Ltd
    Allergy 52 (1997), S. 0 
    Details
    ISSN: 1398-9995
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: We studied the effect of tea polyphenols on histamine release from rat basophilic leukemia (RBL-2H3) cells. Among tea polyphenols, (-)-epigallocatechin gallate (EGCG) most strongly and dose-dependently inhibited histamine release from cells stimulated with a calcium ionophore, A23187. (-)-Epigallocatechin (EGC) and (-)-epicatechin gallate (ECG) with a triphenol residue moderately inhibited histamine release, whereas diphenolic (+)-catechin (C) and (-)-epicatechin (EC) did not. The magnitude of the inhibitory effect was in the order EGCG 〉 ECG 〉 EGC. Among simple polyphenols, the triphenol compounds, pyrogallol (PG) and gallic acid (GA) exerted inhibitory activity, but the diphenols, pyrocatechol, hydroquinone, and resorcinol did not. In addition, the mixture of PG and GA inhibited histamine release as strongly as EGCG with two triphenol residues. Similarly, they inhibited histamine release induced by IgE-antigen complex stimulation more efficiently than that induced by A23187 stimulation. EGCG did not inhibit the increase of intracellular Ca2+ in RBL-2H3 cells stimulated with A23187 or IgE antigen. These results indicate that the triphenol structure plays an important role in the inhibitory activity of tea polyphenols. Their activity seemed to be exerted through the metabolic events occurring after the elevation of intracellular Ca2+ concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1398-9995.1997.tb02546.x
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  • 10
    Electronic Resource
    Electronic Resource
    Virological characteristics of HCV infection in Japanese haemophiliacs (1997)
    Oxford, UK : Blackwell Science Ltd
    Haemophilia 3 (1997), S. 0 
    Details
    ISSN: 1365-2516
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: It has been found that almost all haemophiliacs treated with pooled concentrates of clotting factor VIII or IX before 1985/6 have been infected with hepatitis C virus (HCV). In order to clarify the characteristics of HCV infection in Japanese haemophiliacs, we investigated the HCV genotype and HCV-RNA level in 80 patients with haemophilia who had been confirmed to be positive by a second-generation HCV antibody test. HCV-RNA was detected in 60 (75.0%) individuals and various HCV genotypes were found. Although 80% (48/60) of the patients had genotype 1b, the frequency of each genotype was quite different from that in HCV-infected non haemophiliac Japanese. Particularly, multiple HCV genotypes were observed in 27 (46.7%) patients. The mean (± SD) level of HCV-RNA was 5.3 × 105 ±  1.1 × 106 copies mL−1. The viral load in patients with genotype 2a was significantly less common than those with genotype 1a (P= 0.0007), genotype 1b (P= 0.0009) and combined genotype 1a/1b (P= 0.0019). In patients co-infected with human immunodeficiency virus (HIV), the HCV-RNA level was significantly higher (P= 0.05) than in those without co-infection. However, there was no significant difference (P= 0.25) in the HCV-RNA level with HCV/HIV co-infection among the 40 patients with group 1 genotypes. We conclude that this biased distribution of HCV genotypes in Japanese haemophiliacs reflects their specific mode of HCV infection. Moreover, these results suggest that super-infection with HIV does not greatly influence the HCV load in patients with no marked immunological deterioration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2516.1997.00097.x
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