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  • 1
    Digitale Medien
    Digitale Medien
    p-type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical doping (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 439-442 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have grown high-quality homoepitaxial layers of p-type ZnSe for the first time. The layers were grown on dry-etched ZnSe substrates by molecular-beam epitaxy with nitrogen radical doping. The p-type conduction with carrier concentration of 8.9×1015 cm−3 at 300 K was confirmed by Hall measurement. Low-temperature photoluminescence from the N-doped ZnSe layers was dominated by single acceptor-bound exciton emission I1 at 2.7931 eV, which indicates a formation of a number of shallow acceptors and strain free of the homoepitaxial layers.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350271
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  • 2
    Digitale Medien
    Digitale Medien
    THE USE OF NATIONAL ACCOUNTS FOR LONG-RANGE PLANNING IN JAPAN (1964)
    Oxford, UK : Blackwell Publishing Ltd
    Review of income and wealth 10 (1964), S. 0 
    Details
    ISSN: 1475-4991
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Wirtschaftswissenschaften
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1111/j.1475-4991.1964.tb00974.x
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  • 3
    Digitale Medien
    Digitale Medien
    Homoepitaxial growth of ZnSe on dry-etched substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2553-2555 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High quality ZnSe layers have been grown by molecular beam epitaxy on dry-etched ZnSe substrates. Surface damage caused by cutting and polishing of the ZnSe substrate was removed by dry etching using BCl3 gas to 10 μm depth. The dry-etched ZnSe substrates exhibited smooth surface morphology and showed excitonic emissions stronger than that from as-polished substrates in photoluminescence (PL) measurements at 11 K. The low-temperature PL spectra obtained from homoepitaxial ZnSe layers grown on the substrates dry etched at the optimum condition showed a strong free-exciton emission at 2.804 eV and a dominant donor-bound exciton emission at 2.798 eV. Since each excitonic emission shows a single peak, the homoepitaxial layers appear to be free from strain.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101048
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  • 4
    Digitale Medien
    Digitale Medien
    Internal photoluminescence and lifetime of light-emitting diodes on conductive ZnSe substrates (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4690-4692 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on the molecular beam epitaxial growth of green (508 nm) and blue (489 nm) light-emitting diodes (LEDs) on conductive ZnSe substrates. The resistivity of the (001)-oriented ZnSe wafers was drastically reduced by a zinc extraction treatment to typical values of 1×10−1 Ω cm. The intensity of an additional orange band around 600 nm observed in electroluminescence depends strongly on the wavelength of the multi-quantum-well emission. This can be explained by absorption and effective re-emission in the substrate material named internal photoluminescence and was confirmed by transmission and photoluminescence experiments with the bare substrates. The LEDs with lifetimes up to 100 hours proofed to be surprisingly stable compared to the structures on undoped ZnSe substrates grown before. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.366211
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  • 5
    Digitale Medien
    Digitale Medien
    Characteristics of Cl-doped ZnSe layers grown by molecular-beam epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3216-3221 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High-quality n-type ZnSe layers have been grown by molecular-beam epitaxy using chlorine (Cl) as a dopant. The Cl-doped ZnSe layers showed mirrorlike morphology and good crystallinity, although some degrade in crystallinity is observed at a heavy doping. The carrier concentration of the layer could be widely controlled by a ZnCl2 Knudsen cell temperature. The carrier concentration attained 1×1019 cm−3, where the resistivity was as low as 3×10−3 Ω cm, indicating a remarkable improvement compared to the previous work using group-III elements as a dopant. Hall mobilities at room temperature were in the range of 200–400 cm2/(V s), depending on the doping level. The Cl-doped ZnSe layer exhibited strong blue near-band-gap photoluminescence (PL) with suppressed deep-level emission at room temperature. The 4.2-K PL of the layer was dominated by strong emission of excitons bound to neutral donors originating from substitutional Cl atoms. It was found by a secondary ion-mass-spectroscopy analysis that diffusion of Cl atoms in the ZnSe layer during growth was negligible (〈370 A(ring)).
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339323
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  • 6
    Digitale Medien
    Digitale Medien
    Spin-flip Raman scattering from shallow and deep donor centers in nitrogen-doped p-type zinc selenide (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2063-2065 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The net acceptor concentration in p-type ZnSe doped with increasing amounts of nitrogen is believed to be limited by the formation of a compensating donor species at a depth of about 45–55 meV beneath the conduction band. We report spin-flip Raman scattering from these and other donor-like centers in specimens produced by nitrogen radical doping during molecular beam epitaxial growth. The experiments show that the main compensating donor center introduced by nitrogen doping has a g value of 1.36±0.07, in agreement with the interpretation of previous optically detected magnetic resonance spectra from nitrogen-doped layers. © 1994 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.112965
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  • 7
    Digitale Medien
    Digitale Medien
    Giant nonlinear phase shift at exciton resonance in ZnSe (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 192-194 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We study the optical nonlinearity just at the exciton resonance in ZnSe at 8 K. A sample with thickness of 2.4 μm is grown by molecular-beam epitaxy on a GaAs substrate. Using reflection-type polarization spectroscopy with weak picosecond optical pulses, we observe nonlinear phase shift, being free from incoherent processes caused by the accumulation of excitons. A huge nonlinear phase shift, 0.15 deg cm2/kW, whose effective χ(3) is over 10−2 esu, with a response time shorter than 20 ps is obtained.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.106960
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  • 8
    Digitale Medien
    Digitale Medien
    CdSe/ZnSe quantum structures grown by migration enhanced epitaxy: Structural and optical investigations (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1510-1512 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Migration enhanced epitaxy has been applied to induce the change from two-dimensional growth to formation of self-assembling islands in the growth of CdSe on ZnSe. Transmission electron microscopy images from samples with a ZnSe caplayer show a transition from a flat quantum well to an interrupted layer with pronounced thickness fluctuations when the CdSe exceeds its critical thickness. These results are confirmed by high resolution x-ray diffraction measurements, as only for the former sample the 004 rocking curve can be simulated assuming a flat quantum well with abrupt interfaces. Compared to bulk CdSe, the photoluminescence peak is blueshifted by about 0.5 eV. PL excitation experiments indicate that the interrupted layer consists of CdSe islands embedded in Zn1−xCdxSe with a composition gradient. Atomic force microscopy images of uncapped samples show spherical islands with a height of 20 nm and a diameter-to-height ratio of 4:1. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.119951
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  • 9
    Digitale Medien
    Digitale Medien
    Effects of benzyladenine on bud break of roses
    Amsterdam : Elsevier
    Scientia Horticulturae 24 (1984), S. 379-383 
    Details
    ISSN: 0304-4238
    Schlagwort(e): axillary bud ; benzyladenine ; bud atrophy ; cytokinin ; dormancy
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Land- und Forstwirtschaft, Gartenbau, Fischereiwirtschaft, Hauswirtschaft
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1016/0304-4238(84)90123-7
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  • 10
    Digitale Medien
    Digitale Medien
    Inhibitory Effect of Nonenzymatic Glycation on Ubiquitination and Ubiquitin-Mediated Degradation of Lysozyme
    Amsterdam : Elsevier
    Biochemical and Biophysical Research Communications 192 (1993), S. 700-706 
    Details
    ISSN: 0006-291X
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Biologie , Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1006/bbrc.1993.1471
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