Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Inflation, indexing and economic development
    Amsterdam : Elsevier
    World Development 15 (1987), S. 1119-1130 
    Details
    ISSN: 0305-750X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Geography , Political Science , Sociology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0305-750X(87)90176-8
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Sharp line injection luminescence from InP quantum dots buried in GaInP (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1251-1253 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP quantum dots embedded in Ga0.5In0.5P are investigated by injection luminescence. By using a masking technique we have improved the spatial resolution. At 77 K, the luminescence peak of the fully formed InP dots occurs at about 1.62 eV. In addition, in the 1.7–1.8 eV energy range, we observe a rich structure in the spectra with several sharp lines typically 3 meV in width. The origin of this luminescence is attributed to the partially formed InP quantum dots. This injection luminescence band also exhibits spatial variations both in the envelope as well as in the fine structure. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362866
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Formation of interface layers in GaxIn1−xAs/InP heterostructures: A re-evaluation using ultrathin quantum wells as a probe (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1501-1510 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the metalorganic vapor phase epitaxy growth of ultrathin GaInAs/InP and GaAs/InP quantum well (QW) structures using photoluminescence (PL) spectra as a probe for interface effects. In parallel we have also studied InAsxP1−x "interface QWs'' formed by simply exposing InP to AsH3. We see a correlation between QW properties (PL peak position, effective thickness, PL half-width) and the surface phase during the growth of the QW material. For GaAs QWs grown under conditions where typically the As-excess c(4×4)/d(4×4)- or (1×2)-like (with As double layers) surface reconstructions, we find a strong red-shift of the PL peak positions. The red-shift becomes smaller the closer the growth conditions come toward the border to the (2×4) reconstruction (with only one As-termination layer). We thus conclude that the surface itself is one source for As carryover. For GaInAs QWs a boundary between an As-excess/no As-excess surface reconstruction seems to exist at higher AsH3/lower T values. Near to this border GaInAs QWs can be deposited which show PL-half-widths between 7 and 11 meV even for the range of 1–5 ML nominal thickness. The P/As replacement reaction at the lower interface is for short AsH3 interaction times (≤1 s) restricted to less than 1 ML and contributes a relatively constant amount to the effective thickness of the QW. Similarly, we show that InAsxP1−x interface QWs formed by short time interaction of InP and AsH3, originate less from a reaction into the depth of the InP, but more from a consumption of the As which is adsorbed onto the InP surface after the AsH3 treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356385
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    The hole photoionization cross section of EL2 in GaAs1−xPx (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3721-3723 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hole photoionization cross section σ0p of EL2 is determined at T=80 K for different x in GaAs1−xPx. From these data, the energy position of the EL2 level relative to the valence band is determined for different alloy compositions. The results are compared with the previously determined energy positions of the EL2 level relative to the conduction band and with the corresponding change in the direct band gap with alloy composition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342603
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Electrical characterization of InP/GaInP quantum dots by space charge spectroscopy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3747-3755 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An investigation of coherently grown InP quantum dots embedded in Ga0.5In0.5P by conventional space charge spectroscopy methods is reported. Deep level transient spectroscopy (DLTS) is used to obtain quantitative information on the electron emission from the dots. The applied field is found to significantly enhance the electron emission rates as seen by shifts in the peaks towards lower temperatures with increased field. Taking the field induced barrier lowering into account, the emission energy for the one electron ground state of the dot is determined as 240±10 meV. The correlation between the measured signal and the observed electron accumulation in capacitance–voltage measurements is clearly demonstrated. Further, studies of the electron emission when the average electron population in the dots was varied show that the emission energies are modified by the coulomb charging energy. Admittance measurements as a function of temperature, bias and frequency were also performed, and the results are qualitatively explained in terms of response from the dots. These observations are consistent with the effect of the signal frequency on the measured carrier concentration profile. To complete the picture and in order to distinguish the DLTS signature of the dots from that of the deep levels in GaInP, electron traps in the barrier material were also characterized. Two main electron traps, one with an activation energy of about 950 meV and the other having an activation energy of 450 meV, were present in all the samples. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368553
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Characterization of the Mn acceptor level in GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1564-1567 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on deep-level transient spectroscopy investigations of the Mn acceptor level in GaAs, including measurements of the emission and capture of holes and of the capture of electrons. A comparison is made between electron capture rates obtained from space-charge techniques and from photoluminescence decay measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341837
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Dislocations in mismatched layers of GaAsxP1−x in between GaP as observed by low-temperature cathodoluminescence: Part II. Grown on (111) oriented substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1667-1671 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectrally resolved low-temperature cathodoluminescence (CL) imaging has been performed on thin, 250 A(ring), mismatched layers of GaAsxP1−x in between bulk GaP. The layers were grown on (111) oriented substrates by metalorganic vapor phase epitaxy, with layers ranging from perfectly strained to totally relaxed. CL imaging has proven to be a very sensitive technique for the study of the onset of the formation of misfit dislocations and is therefore useful for determination of the critical thickness [A. Gustafsson, M.-E. Pistol, M. Gerling, L. Samuelson, M. R. Leys and H. Titze, J. Appl. Phys. 70, 1660 (1991)]. For the use of perfectly strained layers, growth on (111) oriented substrates can be of interest since the critical thickness predicted by the mechanical equilibrium theory [J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974)] is about twice that for growth on (001) oriented substrates. In this work we show that the dislocations involved in the strain relief for the growth of mismatched layers on (111) oriented substrates are of the perfect 60° type and that the experimental critical thickness agrees well with the value expected from the mechanical equilibrium theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349534
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Reflectance difference for in situ control of surface V/III ratio during epitaxial growth of GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1737-1741 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical, in situ, real time control of surface processes during epitaxy is becoming increasingly important for the understanding and control of crystal growth. Here results are presented of in situ studies of the surface V/III balance using the reflectance-difference (RD) method during vacuum chemical epitaxy of (001) GaAs from arsine and triethylgallium. We have found a relationship between the RD signal and the V/III ratio, and we demonstrate the possibility for the use of this relationship for the optimization of growth. We have, by RD, detected a sharply defined, critical V/III ratio, below which the morphology and the photoluminescence intensity deteriorate dramatically, and which can be used to control the conversion from n-type to p-type conductivity. We believe that these observations will be of great importance for the in situ optimization of epitaxial growth, and in eliminating much of the uncertainties involved in reproducing surface V/III ratios.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349513
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Dislocations in mismatched layers of GaAsxP1−x in between GaP as observed by low-temperature cathodoluminescence: Part I. Grown on (001) oriented substrates. (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1660-1666 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibility of growing lattice-mismatched layers and quantum wells becomes more and more interesting for the fabrication of devices. For device performance it is necessary to control the formation of misfit dislocations within the mismatched layers. It is therefore essential to study the onset of misfit dislocations versus amount of mismatch and layer thickness. A preliminary cathodoluminescence (CL) investigation, performed on layers of GaAsxP1−x mismatched to GaP barriers, was presented [A. Gustafsson, J. Jönsson, M. Gerling, M. R. Leys, M.-E. Pistol, L. Samuelson, and H. Titze, Inst. Phys. Conf. Ser. No 100, 771 (1989)]. In this paper the critical thickness with respect to the composition, x, in GaAsxP1−x, is studied from a determination of the onset of the formation of dislocations as observed in the monochromatic CL images. The experimental values of the critical thickness are compared to theoretical predictions for the critical thickness, according to different theories. The best agreement is found with the mechanical equilibrium theory, which assumes that the barrier for the formation of dislocations is negligible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349533
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Sol-Gel Encapsulated Light-Transducing Protein Phycoerythrin: A New Biomaterial (1995)
    s.l. : American Chemical Society
    Chemistry of materials 7 (1995), S. 1779-1783 
    Details
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/cm00058a005
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...