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  • Electronic Resource  (32)
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  • Electronic Resource  (32)
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  • 1
    Electronic Resource
    Electronic Resource
    Non-self-limiting nature of silicon reduction of WF6 in cold wall systems (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1428-1441 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper addresses the kinetics and related mechanisms of non-self-limiting nature of Si reduction of WF6 in cold wall systems for the first time. The growth of such films in low-pressure chemical-vapor deposition (LPCVD) and ultrahigh vacuum (UHV) systems is compared. Both systems produce non-self-limiting, uniform, controllable, nonporous films. The growth is controlled by process parameters such as the wafer temperature and WF6 concentration at the wafer surface. The order of the Si reduction reaction is 0.5 in the concentration of WF6. The tungsten films deposited in the LPCVD system contaminated with water vapor are thicker than the films grown in the UHV system even when the temperature is below 450 °C. Such thicker films are produced as a result of the formation of an amorphous W-O layer. From the thermodynamic considerations, the origin of W-O layer is attributed to a parallel reaction between water vapor, WF6, and substrate Si. The beneficial role played by the W-O layer is that it prevents any volume shrinkage of the converted layer and restricts lateral encroachment. In the absence of such a layer as in the case of the UHV system, severe volume shrinkage and encroachment are observed. A theoretical model together with physical mechanisms explaining the non-self-limiting phenomenon are proposed. The mechanism suggests that a fine-grained W structure surrounded by a W-O layer, formed in the LPCVD system, assists faster out-diffusion of Si through the tungsten films compared to the UHV system. The higher values of the diffusion coefficient for Si out-diffusion through films grown in the LPCVD system as compared with the UHV system support this mechanism. The out-diffused Si is substituted to W by reduction reaction to complete the film growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351265
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    The use of azo-compounds as probes of carbon incorporation of nominally undoped metalorganic vapor phase epitaxy grown GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2156-2160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Secondary ion mass spectroscopy has been used to quantitatively determine the carbon concentration in nominally undoped GaAs grown by metalorganic vapor phase epitaxy from TMG (13C 99%) and AsH3. Both an increase in the V/III ratio and the addition of supplemental gas phase radicals reduced the carbon incorporated from the TMG. Higher V/III ratios are proposed to increase the surface concentration of AsHx species. Supplemental gas phase t-butyl radicals, produced from the decomposition of azo-t-butane, are proposed to attack AsH3, also resulting in an increase in the surface concentration of AsHx species. Higher surface concentrations of AsHx are then proposed to reduce carbon incorporation by enhancing the desorption of carbon-containing species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348743
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of epitaxial GaAs and AlxGa1−xAs layers doped with oxygen (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1979-1981 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intentional oxygen doping ((approximately-greater-than)1017 cm−3) of GaAs and Al0.30Ga0.70As epitaxial layers was achieved during metalorganic vapor phase epitaxy through use of an oxygen-bearing metalorganic precursor, dimethylaluminum methoxide (CH3)2AlOCH3. The incorporation of oxygen and very low levels of Al (AlAs mole fraction 〈0.005) in the GaAs layers leads to the compensation of intentionally introduced Si donors. Additionally, deep levels in GaAs associated with oxygen were detected. The introduction of dimethyl aluminum methoxide during AlxGa1−xAs growth did not alter Al mode fraction or degrade the crystallinity of the ternary layers, but did incorporate high levels of oxygen which compensated Si donors. The compensation in both GaAs and Al0.30Ga0.70As indicates that high resistivity buffer layers can be grown by oxygen doping during metalorganic vapor phase epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105038
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  • 4
    Electronic Resource
    Electronic Resource
    High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1896-1898 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High concentrations of electrically active phosphorus have been grown in Si epitaxial layers at 750 °C and below in an atmospheric pressure deposition system using PH3 and SiCl2H2 in H2. PH3 remarkably enhances the silicon deposition rate in the range 550–750 °C in contrast to previously reported doping studies using SiH4. Chemical concentrations as high as 2.5×1020 cm−3 with an electrical activity of 1×1020 cm−3 were obtained in layers that were free of defects by transmission electron microscopy. The doping level can be modulated between 1×1019 and 5×1016 cm−3 indicating that there are no complications due to dopant retention on sample or reactor wall surfaces. Emitter-base diodes formed in the epitaxial layers exhibited ideal forward and low-leakage reverse characteristics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105066
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  • 5
    Electronic Resource
    Electronic Resource
    High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 517-519 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon tetrabromide (CBr4) and bromoform (CHBr3) have been studied as carbon doping sources for GaAs grown by gas source molecular beam epitaxy (GSMBE) with elemental Ga and thermally cracked AsH3. Hole concentrations in excess of 1×1020 cm−3 have been measured by Hall effect in both CBr4- and CHBr3-doped GaAs, which agrees closely with the atomic C concentration from secondary-ion mass spectrometry, indicating complete electrical activity of the incorporated carbon. The GaAs growth rate is unaffected by the CBr4 and CHBr3 fluxes over the range of dopant flow investigated. The efficiencies of carbon incorporation from CBr4 and CHBr3 are, respectively, 750 and 25 times that of trimethylgallium (TMG), which is commonly employed as a carbon doping source in metalorganic MBE (MOMBE). The sensitivity of carbon incorporation to varying substrate temperature and V/III ratio has been observed to be significantly reduced with CBr4 and CHBr3 from that obtained under similar growth conditions with TMG in MOMBE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104600
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  • 6
    Electronic Resource
    Electronic Resource
    Experimental evidence of both interstitial- and vacancy-assisted diffusion of Ge in Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 843-845 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the first experimental identification of the diffusion mechanisms of Ge in Si. Using thermal nitridation reactions to create either excess self-interstitials or vacancies, it is established that under equilibrium conditions at 1050 °C Ge diffusion takes place by both substitutional-interstitial interchange and vacancy mechanisms, with comparable contributions from each. If previous conjectures that Ge diffusion in Si is similar to Si self-diffusion are correct, our findings support the idea that Si self-diffusion takes place by both interstitial and vacancy mechanisms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100863
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  • 7
    Electronic Resource
    Electronic Resource
    Hydrogen plasma induced defects in silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1735-1737 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of extended defects in silicon introduced by hydrogen containing plasmas has been studied by transmission electron microscopy for a variety of technological processes. Depending on the doping level of the substrate, the substrate temperature and the presence/absence of simultaneous energetic ion bombardment, {111} planar defects, gas bubbles, and a heavily damaged near-surface region have been observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99810
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  • 8
    Electronic Resource
    Electronic Resource
    Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1317-1319 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The controlled incorporation of carbon has been demonstrated for the metalorganic vapor phase epitaxy of GaAs. Carbon levels between 1016 and 1019 cm−3 can be achieved under typical growth conditions by using Ga(CH3)3 and either As(CH3)3 or mixtures of As(CH3)3 and AsH3. The carbon incorporation into GaAs goes through a minimum with growth temperature at ∼650 °C when using Ga(CH3)3 and As(CH3)3. The controlled addition of AsH3 monotonically decreases the carbon incorporation. The high carbon levels ((approximately-greater-than)1–2×1019 cm−3), greater than the reported solid solubility, are thermally stable with a low diffusion coefficient. The GaAs:C layers exhibit a low deep level concentration, ∼1013 cm−3, with only a single midgap trap present.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100008
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  • 9
    Electronic Resource
    Electronic Resource
    Reaction of titanium with germanium and silicon-germanium alloys (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 228-230 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction of Ti with pure Ge and several Ge-Si alloys has been investigated with the double aim of understanding the reaction with Ge and of throwing some light on the still vexing problem of the Ti-Si reaction. With pure Ge one observes first of all the formation of Ti6Ge5 until complete consumption of the Ti is present. This is followed by the clearly identifiable nucleation of TiGe2, initially forming islands that grow laterally. With a 50-50 (at. %) alloy of Si and Ge, one still observes distinct growth steps, but there is overlap between the growth of the initial phase, and the nucleation and growth of Ti(Ge,Si)2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101444
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  • 10
    Electronic Resource
    Electronic Resource
    Improved detection of carbon in GaAs by secondary ion mass spectroscopy: The influence of hydrocarbons in metalorganic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1704-1706 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quantitative analysis of carbon levels in thin layers of semiconductor materials is usually limited by poor detection limits. While several qualitative techniques for detecting carbon exist, secondary ion mass spectroscopy (SIMS) has been the primary tool for obtaining depth profiles of carbon in thin films. The presence of carbon compounds in the residual gas background of the SIMS instrument typically limits the carbon detection limits to ∼1017 cm−3 under standard operating conditions. If the carbon contamination in material processing could be studied with 13C labeled compounds, detection sensitivities should be far better. We have shown here that with this approach and the judicial choice of the analyte ion As13C− the detection sensitivity can be lowered by more than two orders of magnitude. We have applied this technique to the study of the incorporation of carbon from isotopically enriched CH4, C2H2, and C2H4 during the epitaxial growth of GaAs by the metalorganic vapor phase epitaxy technique. We find no additional incorporation of carbon into these layers when substantial amounts of the hydrocarbons are introduced into the growth ambient. The use of isotopically enriched sources, together with these improved SIMS techniques, permits the routine detection of carbon at very low levels without the interference present in the conventional SIMS approach.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99023
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