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  • 1
    Electronic Resource
    Electronic Resource
    Field effect on thermal emission from the 0.40 eV electron level in InGaP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 771-774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are reported of electric-field dependence on thermal emission of electrons from the 0.40 eV level at various temperatures in InGaP by means of deep-level transient spectroscopy. The data are analyzed according to the Poole–Frankel emission from the potentials which are assumed to be Coulombic, square well, and Gaussian, respectively. The emission rate from this level is strongly field dependent. It is found that the Gaussian potential model is more reasonable to describe the phosphorus-vacancy-induced potential in InGaP than the Coulombic and square-well ones.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353336
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  • 2
    Electronic Resource
    Electronic Resource
    Deep center scattering potential in InGaP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7410-7414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mobility limited by the scattering of a phosphorous vacancy-induced deep center in In0.5Ga0.5P alloy grown by liquid-phase epitaxy on a (100) GaAs substrate has been investigated by means of Hall mobility and deep-level transient spectroscopy measurements. Two kinds of scattering potentials, Gaussian well type and square-well type, were considered. It was found that the scattering potential can be better described by the Gaussian-type potential than the square-well one. The mobility limited by deep center scattering has been fully calculated and analyzed. As a result, the mobility is characterized by a temperature dependence of T−1/2 in the temperature range from 77 to 400 K. The point defect scattering severely reduces the total mobility as its concentration increases. In addition, the scattering case when there is an electron trapped in the Gaussian potential well was also quantitatively investigated. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358524
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  • 3
    Electronic Resource
    Electronic Resource
    Linewidth of the infrared absorption spectra due to bound-to-continuum transition in GaAs/AlxGa1−xAs multiple quantum well structures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1131-1133 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed an extremely narrow absorption spectrum due to bound-to-continuum transition in GaAs/AlxGa1−xAs multiple quantum wells (MQWs). Its linewidth is only about one tenth of the values reported previously. Our calculation indicates that the broadening of the excited state in the continuum has little contribution to the absorption linewidth. We have grown a sample whose MQW region contains two kinds of wells with a minor thickness inhomogeneity. Its resultant absorption linewidth is six times as large as that of homogeneous well sample, which is in good agreement with our theoretical analysis. Thus we can suggest that the wider absorption spectra reported by many authors may be due to the well width inhomogeneity. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122106
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of the conduction-band offset of a single AlGaAs barrier layer using deep level transient spectroscopy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2813-2814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tunneling from an AlGaAs confined thin layer to a GaAs layer in the GaAs/Al0.33Ga0.67As/GaAs structure during the trapped electron emission from deep level in the AlGaAs to its conduction band has been observed by deep level transient spectroscopy. With the aid of the tunneling effect, the conduction-band offset ΔEc was determined to be 0.260 eV, corresponding to 63% of ΔEg. A calculation was also carried out based on this tunneling model by using the experimental value of ΔEc=E2−E1=0.260 eV, and good agreement between the experimental and calculated curves is obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109218
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  • 5
    Electronic Resource
    Electronic Resource
    Determination of the sub-band energy in the V-shaped potential well of δ -doped GaAs by deep level transient spectroscopy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2425-2427 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using deep level transient spectroscopy (DLTS) the conduction-subband energy levels in a V-shaped potential well induced by Si-δ doping in GaAs were determined. Self-consistent calculation gives four subbands in the well below the Fermi level. Experimentally, two DLTS peaks due to electron emission from these subbands were observed. Another two subbands with low electron concentration are believed to be merged into the adjacent DLTS peak. A good agreement between self-consistent calculation and experiment was obtained. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112695
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  • 6
    Electronic Resource
    Electronic Resource
    Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2024-2026 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole trap levels in a Mg-doped GaN grown by metalorganic vapor phase epitaxy (MOVPE) are studied with deep level transient spectroscopy (DLTS). The Mg concentration of the sample was 4.8×1019 cm−3, but the hole concentration was as low as 1.3×1017 cm−3 at room temperature. The DLTS spectrum has a dominant peak D1 with activation energy of 0.41±0.05 eV, accompanied by two additional peaks with activation energies of 0.49±0.09 eV(D2) and 0.59±0.05 eV(D3). It was found that the dominant peak D1 consists of five peaks, each of which has different activation energy and capture cross section. A relevant model for these levels is presented in relation to the Mg–N–H complexes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122356
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  • 7
    Electronic Resource
    Electronic Resource
    Involvement of abscisic acid and cytokinins in the senescence and remobilization of carbon reserves in wheat subjected to water stress during grain filling (2003)
    Oxford, UK : Blackwell Publishing Ltd
    Plant, cell & environment 26 (2003), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: This study investigated the possibility that abscisic acid (ABA) and cytokinins may mediate the effect of water deficit that enhances plant senescence and remobilization of pre-stored carbon reserves. Two high lodging-resistant wheat (Triticum aestivum L.) cultivars were field grown and treated with either a normal or high amount of nitrogen at heading. Well-watered (WW) and water-stressed (WS) treatments were imposed from 9 d post-anthesis until maturity. Chlorophyll (Chl) and photosynthetic rate (Pr) of the flag leaves declined faster in WS plants than in WW plants, indicating that the water deficit enhanced senescence. Water stress facilitated the reduction of non-structural carbohydrate in the stems and promoted the re-allocation of prefixed 14C from the stems to grains, shortened the grain filling period and increased the grain filling rate. Water stress substantially increased ABA but reduced zeatin (Z) + zeatin riboside (ZR) concentrations in the stems and leaves. ABA correlated significantly and negatively, whereas Z + ZR correlated positively, with Pr and Chl of the flag leaves. ABA but not Z + ZR, was positively and significantly correlated with remobilization of pre-stored carbon and grain filling rate. Exogenous ABA reduced Chl in the flag leaves, enhanced the remobilization, and increased grain filling rate. Spraying with kinetin had the opposite effect. The results suggest that both ABA and cytokinins are involved in controlling plant senescence, and an enhanced carbon remobilization and accelerated grain filling rate are attributed to an elevated ABA level in wheat plants when subjected to water stress.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-3040.2003.01081.x
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  • 8
    Electronic Resource
    Electronic Resource
    Involvement of abscisic acid and ethylene in the responses of rice grains to water stress during filling (2004)
    Oxford, UK : Blackwell Science Ltd
    Plant, cell & environment 27 (2004), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: This study was to test the hypothesis that the interaction between abscisic acid (ABA) and ethylene may be involved in mediating the effects of water stress on grain filling. Two high lodging-resistant rice (Oryza sativa L.) cultivars were pot-grown. Three treatments, well-watered, moderate water-stressed (MD), and severe water-stressed (SD), were imposed from 9 d post-anthesis until maturity. Grain filling rate and grain weight were significantly increased under MD but decreased under SD. The two cultivars behaved the same. ABA concentration in the grains was very low during the grain filling stage, reaching a maximum when the grain filling rate was highest. Both the grain filling rate and ABA concentration were substantially enhanced by water stress. In contrast to ABA, concentrations of ethylene and 1-aminocylopropane -1-carboxylic acid (ACC) in the grains were very high at early grain filling stage and sharply decreased during the linear period of grain growth. MD reduced, whereas SD remarkably increased, their accumulation. The ratio of ABA to ACC was increased in MD grains but decreased in SD grains, indicating that there was a greater enhancement of ABA concentration than ethylene production in the MD treatment only. Application of cobalt ion (inhibitor of ethylene synthesis) or ABA at the early grain filling stage significantly increased grain filling rate. Spraying with ethephon (ethylene-releasing agent) or fluridone (inhibitor of ABA synthesis) had the opposite effect. The results suggest that antagonistic interactions between ABA and ethylene mediate the grain filling rate, and a high ratio of ABA to ethylene enhances grain filling rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3040.2004.01210.x
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  • 9
    Electronic Resource
    Electronic Resource
    Reduction of exogenous quinones and 2,6-dichlorophenol indophenol in cytochrome b-deficient yeast mitochondria: A differential effect on center i and center o of the cytochrome b-c"1 complex
    Amsterdam : Elsevier
    Archives of Biochemistry and Biophysics 265 (1988), S. 447-453 
    Details
    ISSN: 0003-9861
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0003-9861(88)90148-8
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  • 10
    Electronic Resource
    Electronic Resource
    Direct interaction between the internal NADH: Ubiquinone oxidoreductase and ubiquinol:cytochrome c oxidoreductase in the reduction of exogenous quinones by yeast mitochondria
    Amsterdam : Elsevier
    Archives of Biochemistry and Biophysics 292 (1992), S. 499-505 
    Details
    ISSN: 0003-9861
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0003-9861(92)90022-O
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