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  • 1
    Electronic Resource
    Electronic Resource
    Effects of rolling conditions on microstructure and magnetic properties of thin gauged 3% Si–Fe sheets (abstract) : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4115-4115 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To match the requirements for development of transformer cores with lower iron losses, many new materials are under development including amorphous materials, 6.5% Si–Fe sheets and thin gauged 3% Si–Fe sheets. Among these materials, the thin gauged 3% Si–Fe sheets are attracting attention due to their good magnetic properties and scientific interest. Arai et al. reported that the magnetic properties of the sheets were comparable to those of the amorphous materials and (110)[001] preferred orientation of the sheets are developed by tertiary recrystallization.1 The 100 μm thick 3% Si–Fe sheets were prepared via conventional metallurgical processes including melting and casting, hot rolling to 25 mmT at 1200 °C, first cold rolling to 0.5 mmT, intermediate annealing at 800 °C for 30 min, second cold rolling to 0.25 mmT, intermediate annealing at 800 °C for 30 min, final cold rolling to 100 μm and final annealing at 1200 °C for 1 h in a vacuum of 5×10−6 Torr. Among these processes, the cold rolling process is an important one because preferred orientation of the sheets was developed in the process. Nakano et al. reported that there was an optimum cold rolling ratio to get required magnetic properties of the sheets.2 Recently, we found that the reduction rate, i.e., number of passes, as well as reduction ratio affected the preferred orientation and magnetic properties of the sheets. The number of passes in the first cold rolling process was changed from 7 to 60 and B10 values of the final sheets were changed from 1.30 to 1.84 T according to the number of passes. From x-ray experiments, it was found that intensity of (110) peak in the cold rolled and annealed sheets strongly affected the magnetic properties of the final sheets. We will discuss the relationship between the reduction rate and preferred orientation, and magnetic properties of the thin gauged 3% Si–Fe sheets. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365097
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  • 2
    Electronic Resource
    Electronic Resource
    Optical and electrical characterization of nitrogen ion implanted ZnSSe/p-GaAs (100) (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4994-4999 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen ions were implanted into ZnSxSe1−x epilayers grown on p-GaAs (100) substrates by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Dopant activation and annealing out the implant damage were achieved by a postannealing process in a N2 ambient. Schottky structures employing the implanted p-type ZnSxSe1−x were fabricated and device efficacy was examined by photoluminescence (PL) spectroscopy, current–voltage (I–V), current–voltage temperature (I–V–T), and high frequency capacitance–voltage (C–V) measurements. PL spectra showed a clear donor–acceptor pair (DAP) recombination at an energy of 2.735 and 2.72 eV, in both MBE and MOCVD ZnSSe epilayers, respectively, regardless of the postannealing temperatures. The diode conduction in forward bias proceeds by the combination of thermionic and tunneling emission. C–V measurement proved the maximum doping concentration to be around 1017 cm−3 after ion implantation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366368
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  • 3
    Electronic Resource
    Electronic Resource
    Intense violet-blue photoluminescence in as-deposited amorphous Si:H:O films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 698-700 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three photoluminescence (PL) bands at 340–370, 400–430, and 740 nm were observed at room temperature in a-Si:H:O films fabricated by plasma enhanced chemical vapor deposition without any postprocessing. The violet-blue emission is very strong and stable, and its intensity is closely related to the oxygen content in the films, which can be controlled by the applied dc biases on the sample substrates during deposition. The first two PL peaks are ascribed to Si–O related species, and the last one to the quantum size effect of the nanocrystallites embedded in the a-Si:H:O matrix. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119833
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  • 4
    Electronic Resource
    Electronic Resource
    NOTE (1929)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 51 (1929), S. 638-639 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01377a044
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  • 5
    Electronic Resource
    Electronic Resource
    NEW BOOKS (1929)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 51 (1929), S. 639-646 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01377a045
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  • 6
    Electronic Resource
    Electronic Resource
    NEW BOOKS (1929)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 51 (1929), S. 954-964 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01378a048
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  • 7
    Electronic Resource
    Electronic Resource
    NEW BOOKS (1929)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 51 (1929), S. 1296-1298 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01379a049
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  • 8
    Electronic Resource
    Electronic Resource
    NEW BOOKS (1929)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 51 (1929), S. 1613-1622 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01380a048
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  • 9
    Electronic Resource
    Electronic Resource
    NEW BOOKS (1929)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 51 (1929), S. 1953-1958 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01381a051
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  • 10
    Electronic Resource
    Electronic Resource
    NEW BOOKS (1929)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 51 (1929), S. 2279-2282 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01382a049
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