Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
60 (1986), S. 2065-2068
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The growth of single-crystal bismuth iron-garnet films by in situ sputter epitaxy has been extended to "selected-area sputter epitaxy'' (SASE) where epitaxial growth is locally impeded by low-energy (102 eV) ion bombardment of the substrate from an argon plasma before film deposition. Then, in a critical range of substrate temperatures, a pattern of epitaxial and amorphous patches evolves during deposition with high geometrical resolution. The optical and structural properties of both SASE phases are investigated.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337210
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