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  • 1
    Electronic Resource
    Electronic Resource
    Defect band behavior in p-Cd0.96Zn0.04Te by hydrogen passivation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4077-4079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out in order to investigate the dependence of the optical properties of p-Cd0.96Zn0.04Te single crystals on hydrogen passivation conditions. After the p-Cd0.96Zn0.04Te was annealed at 500 °C in a Cd atmosphere for 5 h, the luminescence due to the recombination of the electrons in the conduction band with acceptors (eA°) and to the donor–acceptor pair (DAP) transitions disappeared. After the p-Cd0.96Zn0.04Te was hydrogenated, the intensity of the exciton luminescence increased so that the (eA°) and DAP peaks related to the Cd vacancies disappeared, and the defect band in the low energy range between 1.4 and 1.5 eV also vanished. These results indicate that hydrogen atoms passivated not only shallow donors but also deep acceptor impurities and that the hydrogen atoms were separated from the hydrogenated samples at 400 °C due to their thermal energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352833
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  • 2
    Electronic Resource
    Electronic Resource
    Topographic effect of surface roughness on thin-film flow (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 422-428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article addresses the effect of topographic structure of surface roughness on the flow of a thin film over a rotating disk. Six factors, namely centrifugation, surface tension, viscosity, air-shear, disjoining pressure, and surface roughness, that affect the depletion of the film are considered. Depletion histories of a thin film are given for cases involving deterministic as well as stochastic descriptions of surface roughness. It has been found that surface roughness of the disk plays a significant role in thin-film flow, and different topographic structures of the surface roughness lead to different asymptotic limits of liquid retention. The interplay of topographic parameters such as the height, skewness, and frequency of surface asperities on lubricant retention is also investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353866
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  • 3
    Electronic Resource
    Electronic Resource
    Characteristics of step-graded separate confinement quantum well lasers with direct and indirect barriers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1964-1967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on step-graded separate confinement quantum well lasers with Al0.85Ga0.15As outer confining layers, AlxGa1−xAs barriers and a 50-A(ring) GaAs quantum well grown by metalorganic chemical vapor deposition. By varying xb from 0.15 to 0.60, we show that, given an adequate optical waveguide confinement factor and sufficient cavity length, the collection of electrons in thin quantum wells with either direct or indirect barriers can be highly efficient, transfer of electrons from indirect barriers to thin direct wells does not degrade laser performance, and electron confinement in the separate confinement region plays no role in the operation of the laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347178
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  • 4
    Electronic Resource
    Electronic Resource
    Dependence of the optical properties of p-CdTe and p-Cd0.96Zn0.04Te on the bromine concentration in a bromine-methanol etching solution (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4074-4076 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence measurements were carried out to investigate the dependence of the optical properties of p-CdTe and p-Cd0.96Zn0.04Te on various relative concentrations of bromine in a mixture of methanol and bromine. As the bromine concentration increased, the intensity of the luminescence increased; additionally, an exciton bound to a neutral acceptor (A°X) peak at 1.588 eV in p-CdTe was resolved into an exciton bound to neutral donor (D°X) peak at 1.592 eV and an A°X peak. The mixed bands of the 1.574 and 1.546 eV peaks were well resolved by using an etching bromine concentration of 2%; in particular, the intensities of the D°X and 1.574 eV peaks increased as much as five and seven times, respectively. The intensity of the peak at 1.48 eV related to defects also increased. The intensity of A°X at 1.609 eV in p-Cd0.96Zn0.04Te changed slightly with the bromine concentration. The intensities of the luminescence peaks due to the recombination of the electrons in conduction band with acceptors and to the defect relation did not vary. These results indicated that the number of Cd vacancies could be reduced due to the addition of Zn.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352832
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  • 5
    Electronic Resource
    Electronic Resource
    Multicarrier characterization method for extracting mobilities and carrier densities of semiconductors from variable magnetic field measurements (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8324-8335 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple, practical method is described to extract the carrier concentration and mobility of each component of a multicarrier semiconductor system (which may be either a homogeneous or multilayered structure) from variable magnetic field measurements. Advantages of the present method are mainly due to the inclusion of both the longitudinal and transverse components of the conductivity tensor and normalization of these quantities with respect to the zero-field longitudinal component of the conductivity tensor. This method also provides a simple, direct criterion by which one can easily determine whether the material under test is associated with a one-carrier or multicarrier conduction. The method is demonstrated for a simple one-carrier system [GaAs single-channel high-electron-mobility-transistor (HEMT) structure] and two multicarrier systems (an InGaAs-GaAs double-channel HEMT structure and two types of carriers present in an InGaAs single-channel HEMT structure). The analysis of the experimental data obtained on these samples demonstrates the utility of the method presented here for extracting carrier concentrations and mobilities in advanced semiconductor structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353424
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  • 6
    Electronic Resource
    Electronic Resource
    Growth of zinc blende-GaN on β-SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6124-6127 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of zinc blende-GaN epitaxial films on β-SiC coated (001) Si substrates using a molecular beam epitaxy approach in which the reactive nitrogen species are generated in a remote 13.56 MHz rf plasma discharge, nitrogen free-radical source. We postulate, based on optical emission spectroscopy studies of the remote plasma, that, in our study, nitrogen atoms are the species primarily responsible for efficient nitridation. The zinc blende nature of the GaN films was confirmed by in situ reflection high-energy electron diffraction, ex situ x-ray diffraction, and ex situ low-temperature photoluminescence analyses. Our zinc blende-GaN film growth rates (∼0.3 μm/h) are higher than those reported to date that involve the use of electron cyclotron resonance type reactive nitrogen sources.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355176
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  • 7
    Electronic Resource
    Electronic Resource
    Positron annihilation study of microvoids in centrifugally atomized 304 stainless steel (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2489-2495 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positron trapping in microvoids was studied by positron-lifetime and positron Doppler line-shape measurements of centrifugally atomized 304 stainless-steel powder, which was hot-isostatically-press consolidated. This material contained a concentration of several times 1023/m3 of 1.5-nm-diam microvoids. Positron annihilation was strongly influenced by the microvoids in that a very long lifetime component τ3 of about 600 ps resulted. The intensity of the τ3 component decreased with decreasing number density of 1.5 nm microvoids. The Doppler peak shape was found to be much more strongly influenced by microvoids than by any other defects such as precipitates or grain boundaries. In particular microvoids produced significant narrowing of the Doppler distribution shape.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354078
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  • 8
    Electronic Resource
    Electronic Resource
    Influence on the magnetic properties by the interface reaction between a TbCo thin film and a Si-contained protective layer (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5322-5324 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Degradation phenomena by interface reaction between TbCo and protective layers (SiNx, AlN) has been investigated. Our study reveals that Co-silicide is formed at the interface and it plays an important role on the degradation process in the TbCo film with SiNx protective layer prepared by dc magnetron reactive sputtering. The possibility of reaction between Co and Si at the interface has been found by using x-ray diffractometry and surface analysis method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344598
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  • 9
    Electronic Resource
    Electronic Resource
    Reflection high-energy electron diffraction dynamics study of GaAs, AlAs, and Al0.5Ga0.5As layer growth under As4 and/or As2 molecular beam species (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2107-2109 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflection high-energy electron diffraction intensity dynamic behavior was examined on GaAs, AlAs, and Al0.5Ga0.5As layers using As4 and/or As2 flux to establish optimum growth conditions for heterointerfaces. Results show that As4 is preferable for the growth of AlAs and Al0.5Ga0.5As, while As2 is better for GaAs. This finding is explained on the basis of the expected dynamic surface kinetic processes. Low-temperature photoluminescence line width of a quantum well (20 monolayer GaAs well/100 monolayer Al0.5Ga0.5As barriers) grown under the optimized growth condition is 4.5 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103930
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  • 10
    Electronic Resource
    Electronic Resource
    Far-infrared absorption spectra measured in InAs/Al0.36Ga0.64Sb quantum wells (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1901-1902 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Far-infrared absorption spectra have been measured for molecular beam epitaxial InAs/Al0.36Ga0.64Sb multiquantum wells by Fourier transform infrared spectroscopy using light incident normal to the layers. The special band lineup for this heterostructure system causes an overlap of the electron and hole states. The measured absorption peak varies in the wavelength range of 5–10 μm in the temperature range of 100–300 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103039
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