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  • 1990-1994  (4)
  • 1991  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 479-481 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the Hall effect and the magnetoresistance in [110] textured Fe/Cr multilayers grown by electron beam evaporation. We have observed a strong magnetic field dependence of the Hall coefficient as well as a large magnetoresistance. In all cases the Hall voltage is positive. The ordinary Hall coefficient is positive at room temperature and changes sign at low temperatures; this is similar to the behavior of an antiferromagnet but differs from that observed in Fe-Cr alloys. The extraordinary Hall coefficient Rs is positive and varies with the resistivity ρ as Rs∝ρ2.6, suggesting the importance of interface scattering.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1503-1505 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10−4–10−2 Torr) and low substrate temperature (600–680 °C) using organometallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films {[Tc (R=0)=90.5 K] and Jc (77 K, 50 K gauss)=1.1×105 A/cm2} is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in situ processing of multilayer structures (e.g., junctions).
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1432-2013
    Keywords: Ca2+ channels ; G protein ; Sympathetic ganglion ; Acetylcholine ; Noradrenaline ; Muscarinic receptors ; α-adrenergic receptors
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Effects of acetylcholine (ACh) and noradrenaline (NA) on voltage-gated ion channels of sympathetic neurones acutely dissociated from rat superior cervical ganglion (SCG) were examined using the whole-cell voltage-clamp technique. Depolarizing voltage steps elicited two types of low- and high-voltage-activated (LVA and HVA) Ca2+ currents. Pressure applications of ACh and NA produced concentration-dependent inhibition of the HVA Ca2+ current without affecting the LVA Ca2+ current. The inhibitory action of ACh on the Ca2+ current was blocked by a muscarinic antagonist, atropine. The action of NA was suppressed by an α 2-adrenergic antagonist, yohimbine, but not by an α 1-adrenergic antagonist, prazosin. Delayed rectifying outward K+ currents and inward rectifying K+ current were not affected by either ACh or NA. Tetrodotoxin-sensitive and -insensitive Na+ currents also remained unaffected under actions of ACh and NA. When recorded with electrode containing guanosine-5′-O-(3-thiotriphosphate) (GTP-γ-S), the inhibitory actions of ACh and NA on Ca2+ currents became irreversible. After treatment of SCG neurones with pertussis toxin, the inhibitory action of ACh on the Ca2+ current was almost completely abolished, whereas the action of NA was only partially reduced. The results suggest that ACh and NA differentially inhibit the HVA Ca2+ current via different G proteins coupling muscarinic and α 2-adrenergic receptors to Ca2+ channels in rat SCG neurones.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 10 (1991), S. 237-240 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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