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  • 1
    Electronic Resource
    Electronic Resource
    Sputter-induced grain boundary junctions in YBa2Cu3O7−x thin films on MgO (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2591-2594 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low voltage argon ion sputter technique was used to form grain boundary junctions in YBa2Cu3O7−x thin films on MgO. The YBa2Cu3O7−x thin film grown on a pre-sputtered region of MgO was rotated 45° about the [001] axis relative to the YBa2Cu3O7−x thin film grown on an adjacent unsputtered region of the substrate. YBa2Cu3O7−x thin films were grown using pulsed organometallic beam epitaxy (POMBE). The current-voltage and resistance-temperature characteristics of individual grain boundary junctions demonstrated weak-link-type behavior. Sputter-induced 45° grain boundary junctions are advantageous in device applications because they are planar and simple to form in many configurations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358721
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  • 2
    Electronic Resource
    Electronic Resource
    Meandering grain boundaries in YBa2Cu3Oy bi-crystal thin films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2561-2563 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Artificially induced [001] tilt grain boundaries in epitaxial YBa2Cu3Oy (YBCO) thin films were prepared by deposition onto SrTiO3 bi-crystal substrates and subsequently examined by transmission electron microscopy and atomic force microscopy (AFM). It was found that the YBCO grain boundary deviated from the path defined by the underlying substrate boundary, with the "meandering'' YBCO boundary only generally following the path defined by the boundary in the underlying substrate. The AFM studies suggest this "meandering'' behavior is related to the nucleation and growth mechanisms of the film, and based on this, we were able to vary the magnitude of the meandering by changing the growth conditions. The implications of this meandering behavior are significant, suggesting potential variations in electrical behavior from point to point along these boundaries. This effect is likely to be exacerbated by reduced junction linewidths and may lead to inconsistent behavior in devices which utilize this type of boundary. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113167
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  • 3
    Electronic Resource
    Electronic Resource
    Integrated multilayer sputter-induced 45° YBa2Cu3O7−x grain boundary junctions (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1013-1015 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A versatile multilayer technique has been developed to form 45° YBa2Cu3O7−x [001] tilt grain boundary junctions on LaAlO3 substrates. An epitaxial MgO layer is initially deposited on a (100) LaAlO3substrate using pulsed organometallic beam epitaxy (POMBE). After a pregrowth sputter treatment, an YBa2Cu3O7−x thin film is then grown using POMBE. The resultant film is c-axis oriented with a cube-on-cube orientation over the unsputtered portion of the MgO, and rotated by 45° about the [001] axis on the sputtered region of the substrate. The resulting grain boundary junction shows weak-link behavior. The advantage of this technique is the ability to place the grain boundary anywhere on the substrate in any configuration, and the potential to use any substrate upon which MgO can be epitaxially grown. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114714
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  • 4
    Electronic Resource
    Electronic Resource
    Pulsed organometallic beam epitaxy of complex oxide films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1503-1505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10−4–10−2 Torr) and low substrate temperature (600–680 °C) using organometallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films {[Tc (R=0)=90.5 K] and Jc (77 K, 50 K gauss)=1.1×105 A/cm2} is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in situ processing of multilayer structures (e.g., junctions).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105301
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  • 5
    Electronic Resource
    Electronic Resource
    In-plane orientation control of (001)YBa2Cu3O7−δ grown on (001)MgO by pulsed organometallic beam epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3037-3039 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of (001) YBCO are grown on epitaxially polished (001) MgO by pulsed organometallic beam epitaxy. The in-plane orientation of the film is controlled by the thickness of a BaO layer, grown in situ, prior to the YBCO growth. For thin BaO layers (〈≈7×1014 Ba/cm2) the films grown [110]YBCO(parallel)[100]MgO. For thick BaO layers ((approximately-greater-than)≈11×1014 Ba/cm2) the films grow [100]YBCO(parallel)[100]MgO. A mechanism that relates the change in YBCO in-plane orientation to a change in the structure of the initial BaO layers with BaO thickness is described. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115569
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