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  • 1995-1999  (7)
  • 1997  (3)
  • 1995  (4)
Material
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  • 1995-1999  (7)
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7313-7322 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten (W) films are deposited from tungsten hexafluoride on sputter-deposited TiN adhesion layers in a cold-wall chemical vapor deposition reactor. The film resistivity of the W films is found to be thickness dependent. It decreases monotonically with increasing film thickness. Typical resistivity values of 40-nm-thick W films are about 19.3–23.4 μΩ cm, depending on the structure of the underlying TiN layer used. The resistivity of a 980-nm-thick W film is 9.8 μΩ cm. Oxygen and fluorine impurities, as well as structural difference in the W films are found to be the major causes for the resistivity variations. Lowering impurity level and/or increasing W crystallite size can decrease film resistivity. The stress of all the W films is found to be tensile, independent of the structure of the TiN layers. However, the absolute value of the stress is intimately associated with the structure of the TiN layers. The stress values can differ by a factor of more than 2 for the 40-nm-thick W films deposited on the different underlying TiN layers. The amplitude of stress also monotonically decreases with increasing film thickness. Consequently, the difference in stress induced by the difference in the underlying TiN layers gradually disappears as the film thickness increases. A strong correlation between the stress and the film texture is found. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5779-5787 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mathematical model of oxidation of SixGe1−x alloys is presented. The growth of SiO2 is simulated in conjunction with the determination of silicon distribution in SixGe1−x using numerical methods. The main feature of the model is the assumption of simultaneous oxidation of germanium and silicon when exposing the SixGe1−x to an oxidizing atmosphere. In accordance with thermodynamics, the GeO2 formed is subsequently reduced by the (free) silicon available at the interface between the growing SiO2 and the remaining SixGe1−x through a reduction reaction. Thus, the enhanced oxidation of silicon in the presence of germanium is modeled as a result of the rapid oxidation of germanium followed by the quick reduction of GeO2 by silicon. The growth of a mixed oxide in the form of either (Si,Ge)O2 or SiO2–GeO2 only occurs when the supply of silicon to the SiO2/SixGe1−x interface is insufficient. A comparison is made between simulation and experiment for wet oxidation (in pyrogenic steam) of polycrystalline SixGe1−x films. It is found that the model gives a good account of the oxidation process. Kinetic parameters, i.e., interfacial reaction rate constant for oxidation of germanium and diffusion coefficient of silicon (germanium) in SixGe1−x, are extracted by fitting the simulation to the experiment. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5773-5778 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of polycrystalline SixGe1−x films with different compositions (i.e., different values of x) is carried out in pyrogenic steam at 800 °C for various lengths of time. It is found that the oxidation is enhanced by the presence of germanium and that the enhancement effect is more pronounced for the films richer in germanium. A mixed oxide in the form of either (Si,Ge)O2 or SiO2–GeO2 is found at the sample surface if the initial SixGe1−x contains more than 50% of germanium. However, a surface silicon cap layer of about 14 nm is found to have a significant impact on the oxidation of the Si0.5Ge0.5 films; it leads to the growth of about 115-nm-thick SiO2 which is about four times that of the SiO2 resulting from the oxidation of the cap layer itself. On the SixGe1−x films with only 30% of germanium, the SiO2 continues to grow after oxidation for 180 min resulting in 233-nm-thick SiO2 which is about 2.4 times greater than the SiO2 grown on 〈100〉 silicon substrates. Rejection of germanium results in piling up of germanium at the interface between the growing SiO2 and the remaining SixGe1−x. Substantial interdiffusion of silicon and germanium takes place in the remaining SixGe1−x. The experimental results are discussed in terms of thermodynamics and kinetics. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 58-60 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In spite of much work, the formation of epitaxial CoSi2 from Ti/Co on (100) Si remains something of a mystery. It has been proposed that epitaxy occurs via the formation of an intermediate phase of CoSi with a (311) preferred orientation. In the absence of sufficient information it is impossible to validate or to invalidate the specific original claim. However, one shows that the formation of preferably oriented CoSi is not a necessary condition for the subsequent growth of epitaxial CoSi2. Careful measurements of diffraction intensities reveal the probable, temporary formation of a metastable form of CoSi2, based on a diamond cubic rather than the usual CaF2 structure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2998-3000 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten (W) films are deposited on sputter-deposited TiN adhesion layers in a cold-wall chemical vapor deposition reactor, initiated with the deposition of a W nucleation layer by SiH4 reduction of WF6. H2 is also introduced in the reactor for some depositions. The electrical resistivity and mechanical stress of the W films are found to be dependent on the underlying TiN layers as well as on the presence of H2 during W nucleation layer deposition. A higher resistivity is obtained when the W is deposited on the TiN prepared at 250 °C than on the TiN prepared at 450 °C. For the W deposited on the low-temperature TiN, the resistivity is reduced by adding H2 to the reactants during W nucleation layer deposition; while for the W deposited on the high-temperature TiN, the resistivity is almost insensitive to the H2 addition. More oxygen and fluorine are found at the W–TiN interface for the W deposited on the low-temperature TiN than on the high-temperature TiN. Introduction of H2 to the reactants during W nucleation layer deposition reduces the concentrations of interfacial fluorine and oxygen, in agreement with thermodynamic predictions. A lower film stress is obtained for the W deposited on the high-temperature TiN layers and/or with H2 addition. The W films become less textured when H2 is introduced to the reactants during W nucleation layer deposition. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 912-912 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Molecular Reproduction and Development 42 (1995), S. 173-179 
    ISSN: 1040-452X
    Keywords: Embryonic stem cells ; Insulin ; IGF-I ; IGF-II ; Receptor ; RT-PCR ; Life and Medical Sciences ; Cell & Developmental Biology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Biology
    Notes: Insulin and insulin-like growth factors (IGF-I and -II) are members of a family of growth factors which are known to be developmentally regulated during preimplantation mouse embryogenesis. The physiological actions of the insulin family of growth factors are mediated by interactions with specific cell surface receptors that are detectable on the cells of preimplantation mouse embryos. Mouse embryonic stem (ES) cells are totipotent cells derived directly from the inner cell mass of the blastocyst. ES cells have the ability to differentiate into all three germ layers and have unlimited growth potential under certain culture conditions. The great advantage of ES cells is the ability to obtain large amounts of tissue for biochemical studies as compared with preimplantation embryos. To examine in greater detail the biological actions of the insulin family of growth factors, the expression of their cognate receptors on ES cells was examined. ES cells were cultured in DMEM medium supplemented with leukemia inhibitory factor (LIF) to maintain the undifferentiated state. Receptor expression was evaluated at the mRNA level using the reverse transcription polymerase chain reaction (RT-PCR), and at the protein level by radioactive labeled ligand-receptor binding assay. Using RT-PCR, mRNAs of all three growth factor receptors were detected in ES cells. Messenger RNA from ES cells was reverse transcribed into cDNA by AMV reverse transcriptase at 42°C for 1 hr. The reverse transcription reaction was amplified with Taq polymerase and specific primers for insulin, IGF-I, or IGF-II receptors by PCR. RT-PCR and the control plasmid cDNA PCR products were resolved electrophoretically on 3% agarose gels. Each amplified PCR product showed the predicted correct size. The target sequence of RT-PCR amplified fragments were further verified by restriction enzyme digestion. The expression of receptors at the protein level was confirmed by Scatchard analysis, which showed specific binding of the radiolabeled ligands. This study shows that ES cells may provide a useful model to study the biological actions of the insulin family growth factors. © 1995 wiley-Liss, Inc.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
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