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  • 1995-1999  (5)
  • 1940-1944
  • 1995  (5)
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  • 1995-1999  (5)
  • 1940-1944
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  • 1
    Electronic Resource
    Electronic Resource
    Low energy electron-enhanced etching of Si(100) in hydrogen/helium direct-current plasma (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2475-2477 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low energy electron-enhanced etching of Si(100) has been achieved by placing the sample on the anode of a dc discharge in hydrogen/helium mixtures. Over a broad range of gas composition, gas pressure, and discharge current, nonpatterned samples gave etch yields of 0.01–0.02 atoms/electron, and average etch rates of 2000–3000 A(ring)/min. Postetch examination by atomic force microscopy revealed surface roughness of 2–3 nm. These results are related to incident flux of H atoms and electrons through a simple model of the anode sheath layer above the sample. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114000
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Ultrafast absorption in free-standing porous silicon films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1966-1968 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrafast absorption studies on free-standing porous silicon films have been carried out at room temperature to investigate the carrier dynamics and the luminescence mechanism. Ultraviolet and visible excitations were used on an as-prepared sample and two annealed samples. Transient absorption curves of UV pumped, as-prepared samples contain a fast decay (τf) of 0.8±0.2 ps and a slower decay of (approximately-greater-than)30 ps. τf is found to be shorter for both the 500 °C annealed sample with UV excitation and for the as-prepared sample with visible excitation. The faster decay rates suggest that the subpicosecond component of the transient absorption may be due to carrier thermalization rather than core-to-surface state excitation transfer. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114755
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Electron and hole doping in NiO (1995)
    Springer
    The European physical journal 97 (1995), S. 83-93 
    Details
    ISSN: 1434-6036
    Keywords: 79.60 ; 71.20 ; 71.28
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We have investigated hole doped (by lithium) and electron-doped (by nickel metal) NiO with photoemission (PES), inverse photoemission (IPES) and low and high energy electron energy loss spectroscopy (EELS). Both types of doping create empty states approximately in the middle of the charge transfer gap of undoped NiO.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01317591
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Hole doping in correlated CT — insulators: LixNi1−xO (1995)
    Springer
    Journal of low temperature physics 99 (1995), S. 421-423 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Experimental results on the optical absorption in Li doped NiO are presented. Upon Li doping, considerable oscillator strength is found to appear throughout the fundamental absorption gap until at 2% doping the d-d excitations usually observed within the gap are completely overwhelmed by these new excitations. Low energy REELS measurements on the same set of samples do not show the same behaviour. We briefly discuss the compatibility of our findings with results of previous electron spectroscopic results and with theoretical scenarios.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00752319
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Photoemission of LaI2 and CeI2 (1995)
    Springer
    The European physical journal 97 (1995), S. 25-34 
    Details
    ISSN: 1434-6036
    Keywords: 79.60 ; 71.28
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The electronic structure of the layered compounds LaI2 and CeI2 was investigated by photoemission and electron energy loss spectroscopy. From the experimental results we are able to confirm the metallic nature of these compounds, and by using photon energy dependent measurements of the valence band we can identify the orbital character of the conduction band as essentially 5d1-like. A detailed analysis of the Ce 3d and 4f spectra yields a remarkably small 4f-5d hybridization strength, almost completely decoupling the f-electron from the conduction band, which makes CeI2 a somewhat unusual system compared to other metallic Ce compounds. Band structure calculations by Jepsen and Andersen [1] confirm these experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01317584
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    Paper (German National Licenses)
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