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  • 1995-1999  (2)
  • 1995  (2)
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  • 1995-1999  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Use of the DX center as a probe to study the profile of Si impurities in planar-doped GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3283-3287 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photo Hall concentration and mobility were measured for two molecular beam epitaxy-grown samples having a silicon planar-doped structure in the GaAs layer of a GaAs/AlGaAs heterojunction. The nominal silicon concentration for both samples was 1.5×1013 cm−2 and the distance between the ideal localization of the doped plane and the interface was adjusted to be 15 A(ring). The difference between the two samples is the growth direction. The Hall measurements were carried out at 77 K both in darkness and under illumination using an infrared light emitting diode as light source. Photoexcited effects indicate the presence of silicon atoms inside the undoped AlGaAs layer and that the silicon profile spreads mainly in the growth direction. Self-consistent electronic structure calculations, in the effective-mass approximations, were performed assuming doping profiles that simulate both samples. The calculations show that parallel conduction occurs when the growth direction is from GaAs to AlGaAs. This is consistent with the Hall measurements. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358682
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Photoconductivity and n- to p-type transition in silicon planar-doped GaAs structures with a doped cap layer (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2659-2665 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoconductivity, photo-Hall free carrier concentrations and mobilities were measured on molecular beam epitaxy-grown silicon planar-doped GaAs samples, with silicon concentrations between 1.4×1012 and 8.8×1013 cm−2, as functions of temperature. In all samples, the planar-doped region is placed 0.2 μm below a n+-doped cap layer at the surface. We perform a systematic investigation of the persistent as well as nonpersistent photoconductivity effects which are present in all samples. A phenomenological analysis shows the presence of two distinct conduction channels, one with n characteristics and the other with p characteristics. These channels can present either bulk or two-dimensional characteristics, depending on the light intensity and on the temperature. A model based on spatial separation between electrons and holes is proposed to account for the persistence of the photoconductivity effect. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360127
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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