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  • 1
    Digitale Medien
    Digitale Medien
    Recent progress of implosion experiments with uniformity-improved GEKKO XII laser facility at the Institute of Laser Engineering, Osaka University (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 2077-2083 
    Details
    ISSN: 1089-7674
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The irradiation uniformity of the GEKKO XII laser [C. Yamanaka et al., IEEE J. Quantum Electron. QE-17 1639 (1981)] has been improved by using partially coherent light with angular spectral dispersion and by improving power balance among the beams. Implosion experiments with the uniformity-improved GEKKO XII have been carried out in order to demonstrate stable formation of the hot spark. The isentrope of the compressed pellet shell is controlled by adding a prepulse to enhance the ablative stabilization of the Rayleigh–Taylor instability. The implosion dynamics has been investigated by x-ray imaging and neutron diagnostics. The experimental results are compared with the mix model prediction based on the one-dimensional hydrodynamic simulation. The degradation of neutron yield is attributed to the low-mode asymmetry. Finally, recent results of planer target experiments on the ablative stabilization of the Rayleigh–Taylor instability are also presented. The observed linear growth rate was about 50% of the classical growth rate and was lower than that of the theoretical prediction, based on the Takabe formula combined with the one-dimensional simulation. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.872005
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  • 2
    Digitale Medien
    Digitale Medien
    Expression of glutathione S-transferase π and cisplatin resistance in human ovarian cancer (1996)
    Suite 500, 5th Floor, 238 Main Street, Cambridge Massachusetts 02142, USA : Blackwell Science Inc.
    International journal of gynecological cancer 6 (1996), S. 0 
    Details
    ISSN: 1525-1438
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Glutathione S-transferase π (GSTπ) expression in tumor cells is thought to relate to cisplatin resistance. We attempted to clarify immunohistochemically the correlation between GSTπ expression and clinical response in ovarian cancer. Fifty-nine patients with ovarian cancer underwent initial debulking surgery and received from three to five courses of cisplatin-based chemotherapy after surgery. Immunostaining for GSTπ was performed on formalin fixed sections of the patients’ tumor by the streptoavidin-biotin-peroxidase complex method. Positive staining of GSTπ was observed diffusely in nuclei and cytoplasm of cancer cells. Of 59 tumors, 38 (64.4%) were GSTπ positive. Twenty-three of 25 patients (92.0%) who showed no response to chemotherapy had GSTπ positive tumor cells. The predictive value of positive GSTπ staining for drug resistance was 79.3% (23/29). The 5-year survival rate of patients with GSTπ positive tumors was significantly lower than that of those with GSTπ negative tumors by the Kaplan-Meier method (P 〈 0.01). The results suggest that overexpression of GSTπ is related to resistance to cisplatin and to prognosis in patients with ovarian cancer.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1046/j.1525-1438.1996.06030241.x
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  • 3
    Digitale Medien
    Digitale Medien
    Standard dose cisplatin with rhG-CSF allows sufficient harvesting of PBSC for autotransplantation in patients with ovarian cancer (1996)
    Suite 500, 5th Floor, 238 Main Street, Cambridge, Massachusetts 02142, USA : Blackwell Science Inc.
    International journal of gynecological cancer 6 (1996), S. 0 
    Details
    ISSN: 1525-1438
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: We have investigated the feasibility of a program of autologous peripheral blood stem cell (PBSC) harvesting and transplantation in patients with ovarian cancer. From four patients, PBSC was collected during hematopoietic recovery following aplasia induced by standard dose cisplatin 70 mg m−2 with etoposide 500 mg m−2 or adriamycin 40 mg m−2 and cyclophosphamide 500 mg m−2 plus recombinant human granulocyte colony-stimulating factor (rhG-CSF) at a dose of 75 µg day−1 given intracutaneously. In apheresed patients, we harvested an average of 2.31 × 105 kg−1 colony-forming unit granulocyte/macrophage (range 0–5.22) per cycle. Low hematologic toxicity was observed during the hematopoietic reconstitution of the four patients subjected to PBSC support with G-CSF (5 µg kg−1 day−1 given by continuous infusion) after high-dose chemotherapy (carboplatin 900 mg m−2 and etoposide 900 mg m−2). The patients were not evaluable for a response because we performed consolidated high-dose chemotherapy. However, no evidence of recurrence has been observed 11.8 months (range 2–19) after high-dose chemotherapy. We can conclude that standard dose cisplatin in combination with etoposide or adriamycin and cyclophosphamide plus rhG-CSF allows sufficient harvesting of PBSC for autotransplantation in patients with ovarian cancer.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1046/j.1525-1438.1996.06060491.x
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  • 4
    Digitale Medien
    Digitale Medien
    Characterization of defects in self-ion implanted Si using positron annihilation spectroscopy and Rutherford backscattering spectroscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9017-9021 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The behavior of vacancy-type defects and displaced Si atoms in Si(100) caused by self-ion implantation has been investigated by variable-energy positron annihilation spectroscopy and Rutherford backscattering spectroscopy/channeling. It is found that the recovery process of the defects strongly depends on the morphology of the implanted region. The divacancies produced by an implantation of 2×1014Si+⋅cm−2, which is less than the critical value required for amorphization, aggregate into large vacancy clusters by annealing at 300 °C. These vacancy clusters diffuse towards the surface at temperatures above 600 °C and anneal out at around 800 °C. The specimen implanted with 2×1015Si+⋅cm−2, in which a complete amorphization takes place in the damaged region, shows a different annealing characteristic. In the first stage (∼600 °C), the amorphous zone is transformed into crystalline material by solid phase epitaxial growth, although large vacancy clusters still remain. These agglomerate clusters continue to grow in a second annealing stage which takes place at around 700 °C. Annealing at 900 °C is required to eliminate these vacancy-type defects. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362634
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  • 5
    Digitale Medien
    Digitale Medien
    Photoluminescence spectra of deformed Si-Ge alloy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6991-6996 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We measured photoluminescence (PL) spectra of deformed bulk Si-Ge alloys and found peculiar peak shifts of D1 and D2 lines depending on the deformation and annealing temperatures. Alloy crystals were grown by the Czochralski method. Specimens were deformed by compression at temperatures between 700 and 900 °C in an argon atmosphere. PL spectra were measured at 4.2 K. Peak positions of D1 and D2 lines depended on the deformation temperatures; they were at higher energies at higher deformation temperatures. On the other hand, those of D3 and D4 did not depend on the deformation temperature. The magnitudes of peak shifts of D1 and D2 lines were proportional to t2/3 at small t due to isothermal annealing ( t: the duration of annealing) at around 650 °C. The activation energy was determined to be 2.5 eV, which was much smaller than that of self-diffusion. These results were interpreted as being due to the change of alloy composition around dislocations caused by the elastic interaction between dislocations and constituent atoms, i.e., Si and Ge, in which process point defects generated during deformation were thought to play a crucial role. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363773
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  • 6
    Digitale Medien
    Digitale Medien
    Molecular-beam epitaxy of Mn1+xSb thin films and substrate temperature dependence of their magneto-optical properties (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2890-2892 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Ferromagnetic Mn1+xSb thin films have been grown on (001) GaAs substrates by molecular-beam epitaxy at substrate temperatures (TS) in the range from 50 to 400 °C. The excess Mn composition (x) of the grown films was found to change uniquely depending on TS. The polar magneto-optical Kerr effect measurement demonstrated a strong TS dependence of Kerr rotation and Kerr ellipticity spectra of Mn1+xSb films from the infrared through ultraviolet wavelength region. A possible origin of the TS dependence of the spectra is discussed in connection with the composition of Mn1+xSb films. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116322
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  • 7
    Digitale Medien
    Digitale Medien
    Effects of interfacial chemistry on the formation of interfacial layers and faulted defects in ZnSe/GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2413-2415 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Existence of Zn-As and Ga-Se interfacial layers were suggested by transmission electron microscopy in Zn treated and Se treated or reacted ZnSe/GaAs interfaces, respectively. High densities of As precipitates and Shockley partials were introduced in films with Zn treatment on a c(4×4) As-rich GaAs surface. In addition, high densities of vacancies and Shockley partials were obtained in samples with a Se-reacted ZnSe/GaAs interface. Formation of the Shockley partials may originate from the stacking errors induced by disordering of Zn- or Ga-interstitials on the GaAs surface. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116151
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  • 8
    Digitale Medien
    Digitale Medien
    Epitaxial MnGa/(Mn,Ga,As)/MnGa trilayers: Growth and magnetic properties (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 711-713 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial ferromagnet/semiconductor/ferromagnet sandwiches with the nominal structure δ Mn60Ga40/GaAs/δ Mn54Ga46 have been grown on GaAs(001) by molecular beam epitaxy, with spacer layer thicknesses ranging from 2 to 19 monolayers (ML) GaAs nominally. A strong antiferromagnetic coupling field μ0Hs=−12 to −39 mT at room temperature is observed for spacer layers of 4–14 ML GaAs nominally, a weaker ferromagnetic coupling of +1 to +7 mT exists outside of this thickness region. Magnetic contamination of the spacer layer and the inclusion of antiferromagnetic Mn2As cannot be ruled out. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.117815
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  • 9
    Digitale Medien
    Digitale Medien
    Magneto-optical response of nanoscaled cobalt dots array (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3040-3042 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Magneto-optical (MO) spectroscopic studies were carried out on submonatomic layer coverage of Co atoms deposited on the reconstructed Au(111) surface forming two-dimensional lattice of nanometer scaled Co dots. The MO spectral features were considerably affected by the shape of the Co dots. Strong dependence of the MO peak intensity on the change of the Co dot shape was observed at around the plasma edge of Au. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115570
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  • 10
    Digitale Medien
    Digitale Medien
    Use of photocurrent difference spectroscopy to determine higher confined states in wide multiquantum well structures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 649-651 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Using a novel photocurrent difference spectroscopy, six conduction subbands have become observable in 20-nm-wide In0.53Ga0.47As/In0.52Al0.48As multiquantum wells. The observed wavelength range was 0.8–1.8 μm. A proper choice of electric fields in the well on the order of 90-170 kV/cm made it possible to magnify the photocurrent difference spectrum by 1×104, owing to the Stark shift of about 20–100 meV. The interband optical transitions were limited to the field-sensitive ones of mostly forbidden type. As a result, conduction-subband eigen energies in the wells were determined at room temperature. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116497
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