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  • 1995-1999  (5)
  • 1997  (3)
  • 1996  (2)
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  • 1995-1999  (5)
Year
  • 1
    Electronic Resource
    Electronic Resource
    On the formation of inhomogeneities in epitaxial CoSi2 layers grown from the interaction of Co/Ti bilayers with Si 〈100〉 substrates (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 762-768 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The redistribution of titanium during the formation of epitaxial CoSi2, grown from the reaction of Co(20 nm)/Ti(10 nm) bilayers with Si 〈100〉, has been investigated. Annealing of Co/Ti/Si structures, at temperatures between 850 and 1050 °C, is shown to be associated with the growth of an inhomogeneous CoSi2 layer having Ti-rich surface layer(s) on top. The formation of inhomogeneities in the CoSi2 layer is conclusively attributed to the presence of Ti-rich surface layer(s). It is shown that smooth and morphologically stable CoSi2 layers can be grown by removing these surface layers followed by a high-temperature treatment in nitrogen atmosphere. We propose that the underlying mechanism for the inhomogeneity formation within the CoSi2 layer is a nucleation-controlled process, induced by an anticipated reaction between the CoSi2 layer and Ti-rich phases near the surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362884
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Oxidation of silicon–germanium alloys. II. A mathematical model (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5779-5787 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mathematical model of oxidation of SixGe1−x alloys is presented. The growth of SiO2 is simulated in conjunction with the determination of silicon distribution in SixGe1−x using numerical methods. The main feature of the model is the assumption of simultaneous oxidation of germanium and silicon when exposing the SixGe1−x to an oxidizing atmosphere. In accordance with thermodynamics, the GeO2 formed is subsequently reduced by the (free) silicon available at the interface between the growing SiO2 and the remaining SixGe1−x through a reduction reaction. Thus, the enhanced oxidation of silicon in the presence of germanium is modeled as a result of the rapid oxidation of germanium followed by the quick reduction of GeO2 by silicon. The growth of a mixed oxide in the form of either (Si,Ge)O2 or SiO2–GeO2 only occurs when the supply of silicon to the SiO2/SixGe1−x interface is insufficient. A comparison is made between simulation and experiment for wet oxidation (in pyrogenic steam) of polycrystalline SixGe1−x films. It is found that the model gives a good account of the oxidation process. Kinetic parameters, i.e., interfacial reaction rate constant for oxidation of germanium and diffusion coefficient of silicon (germanium) in SixGe1−x, are extracted by fitting the simulation to the experiment. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366444
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Oxidation of silicon–germanium alloys. I. An experimental study (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5773-5778 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of polycrystalline SixGe1−x films with different compositions (i.e., different values of x) is carried out in pyrogenic steam at 800 °C for various lengths of time. It is found that the oxidation is enhanced by the presence of germanium and that the enhancement effect is more pronounced for the films richer in germanium. A mixed oxide in the form of either (Si,Ge)O2 or SiO2–GeO2 is found at the sample surface if the initial SixGe1−x contains more than 50% of germanium. However, a surface silicon cap layer of about 14 nm is found to have a significant impact on the oxidation of the Si0.5Ge0.5 films; it leads to the growth of about 115-nm-thick SiO2 which is about four times that of the SiO2 resulting from the oxidation of the cap layer itself. On the SixGe1−x films with only 30% of germanium, the SiO2 continues to grow after oxidation for 180 min resulting in 233-nm-thick SiO2 which is about 2.4 times greater than the SiO2 grown on 〈100〉 silicon substrates. Rejection of germanium results in piling up of germanium at the interface between the growing SiO2 and the remaining SixGe1−x. Substantial interdiffusion of silicon and germanium takes place in the remaining SixGe1−x. The experimental results are discussed in terms of thermodynamics and kinetics. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366443
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  • 4
    Electronic Resource
    Electronic Resource
    Enhanced formation of the C54 phase of TiSi2 by an interposed layer of molybdenum (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 975-977 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase formation during rapid thermal annealing of a Ti/Mo bilayer sequentially deposited on Si substrates has been studied. The Mo layer varied from 0.5 to 2 nm and the Ti layer was always 60 nm thick. The presence of the Mo interposing layer enhances the formation of the C54 of TiSi2 by first forming a Mo-bearing silicide phase of hexagonal structure. The desired C54 phase then nucleates and grows on top of this Mo-bearing silicide phase at a temperature as low as 650 °C via Si diffusion through the growing silicide layers. This is about 100 °C lower than what is usually needed for the C49–C54 transformation. The significance of this finding is that the usual route for the formation of TiSi2, i.e., the C49 phase forms as a result of the Ti–Si interaction and the C54 phase forms as the product of phase transformation, is altered by the interposition of a thin refractory metal (here Mo) layer between Ti and Si. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117100
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  • 5
    Electronic Resource
    Electronic Resource
    Erratum: "Further evidence for the quantum confined electrochemistry model of the formation mechanism of p−-type porous silicon" [Appl. Phys. Lett. 69, 3399 (1996)] (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 912-912 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119267
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    Paper (German National Licenses)
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