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  • 1995-1999  (9)
  • 1990-1994  (8)
  • 1999  (9)
  • 1993  (8)
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  • 1995-1999  (9)
  • 1990-1994  (8)
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  • 1
    Digitale Medien
    Digitale Medien
    Deep level centers in silicon carbide: A review (1999)
    Springer
    Semiconductors 33 (1999), S. 107-130 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract Results from current studies of the parameters of deep centers in 6H-, 4H-, and 3C-SiC are analyzed. Data are presented on the ionization energy and capture cross sections of centers formed by doping SiC with different types of impurities or during irradiation, as well as of intrinsic defects. The involvement of these centers in radiative and nonradiative recombination is examined. This analysis of published data illustrates the large effect of intrinsic defects in the SiC crystal lattice both on the formation of deep centers and on the properties of the epitaxial layers themselves, such as their doping level and polytype homogeneity.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187657
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  • 2
    Digitale Medien
    Digitale Medien
    Effect of γ irradiation on the photoluminescence kinetics of porous silicon (1999)
    Springer
    Semiconductors 33 (1999), S. 1315-1317 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract The effect of γ irradiation on the photoluminescence decay dynamics in porous silicon is investigated. Growth of the photoluminescence intensity and decrease of the decay time in irradiated porous silicon are explained by a lowering of the barriers to recombination of spatially separated electrons and holes via tunneling. The γ irradiation of porous silicon leads to a greater dispersion of the decay time.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187915
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  • 3
    Digitale Medien
    Digitale Medien
    Amplitude-dependent elastic-modulus defect in the main dislocation-hysteresis models (1999)
    Springer
    Physics of the solid state 41 (1999), S. 1105-1111 
    Details
    ISSN: 1063-7834
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract The amplitude-dependent defect of the elastic modulus has been calculated for the three main dislocation-hysteresis models: (i) breakaway hysteresis of Granato-Lücke, (ii) Davidenkov hysteresis, and (iii) friction hysteresis without restoring force (WRF). The ratio r of the amplitude-dependent decrement to the modulus defect has been considered for all three types of loops, and it is shown that, in a general case, r depends on the vibration amplitude. In the particular case of power-law amplitude dependences of the decrement and the modulus defect, r does not depend on amplitude and depends only on the exponent n. Expressions have been obtained for the r(n) dependence for the three hysteresis-loop types, and it is demonstrated that r can serve to identify the loop shape. A comparison of calculated curves with experimental data accumulated to date shows that most of them lie closer to the Davidenkov and WRF hystereses. An analysis has been made of the applicability of the secant modulus-defect approximation used to derive the dislocation strain from internal-friction measurements.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1130947
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  • 4
    Digitale Medien
    Digitale Medien
    Investigation of the effect of surface treatment of a semiconductor on the characteristics of 6H-SiC Schottky diodes (1999)
    Springer
    Semiconductors 33 (1999), S. 875-876 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract Capacitance methods are used to investigate Schottky diodes formed on the basis of epitaxial n-type 6H-SiC layers grown by vapor-phase epitaxy. It is found that the height of the potential barrier and its dependence on the work function of the metal strongly depend on the method used for surface treatment of the semiconductor.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187802
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  • 5
    Digitale Medien
    Digitale Medien
    Wide-gap semiconductors for high-power electronics (1999)
    Springer
    Semiconductors 33 (1999), S. 999-1001 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract The latest results obtained in the development of high-power devices based on wide-gap semiconductors are examined. It is shown that at present silicon carbide remains the most promising material for high-temperature, radiation-resistant, high-power electronics. Certain factors involving a wide commercial adoption of SiC-based devices are examined.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187823
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  • 6
    Digitale Medien
    Digitale Medien
    EXAFS studies of the local environment of lead and selenium atoms in PbTe1−x Sex solid solutions (1999)
    Springer
    Physics of the solid state 41 (1999), S. 1275-1282 
    Details
    ISSN: 1063-7834
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract EXAFS spectroscopy is used to study the local environment of lead and selenium atoms in PbTe1−x Sex solid solutions. In addition to a bimodal distribution of the bond lengths in the first-coordination sphere, an unusually large value of the Debye-Waller factors for the Pb-Pb interatomic distances (second-coordination sphere) and a substantial deviation of this value from Vegard’s law are observed. Monte Carlo calculations show that these observations are related to the complicated structure of the distribution function for Pb-Pb distances. It is found that the number of Se-Se pairs in the second-coordination sphere exceeds the statistical value, which indicates that chemical factors play an important role in the structure of the solid solutions. The contribution of chemical factors to the enthalpy of mixing of the solid solution is estimated (≈0.5 kcal/mole) and this value is shown to be comparable to the deformation contribution.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1130981
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  • 7
    Digitale Medien
    Digitale Medien
    Irradiation as a possible method for producing SiC heterostructures (1999)
    Springer
    Semiconductors 33 (1999), S. 1004-1006 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract Certain aspects of the physics of heteropolytypic junctions based on silicon carbide are examined. It is known that the introduction of certain impurities into the growth zone during epitaxy of silicon carbide results in the growth of films whose polytype is different from that of the initial substrate. It is also known that these impurities lead to the formation of certain deep centers in the band gap of the conductor. Analysis of published data performed in this paper shows that irradiation of SiC with various charged particles also leads to the formation of these deep centers. It is assumed that under certain experimental conditions transformation of the polytype of the already grown epitaxial SiC structure is possible under the action of irradiation and subsequent annealing.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187825
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  • 8
    Digitale Medien
    Digitale Medien
    Influence of native defects on polytypism in SiC (1999)
    Springer
    Semiconductors 33 (1999), S. 707-709 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract An analysis of experimental data on the influence of native defects of the crystalline lattice on polytypism in silicon carbide has been performed. A simple analytical expression, which links the degree of hexagonality of the polytype with the concentration of carbon and silicon vacancies, was obtained. The possible dependence of the model parameters on the experimental conditions is investigated.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187764
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  • 9
    Digitale Medien
    Digitale Medien
    Real structure of Cd2Nb2O7 pyrochlore single crystals (1999)
    Springer
    Technical physics letters 25 (1999), S. 561-563 
    Details
    ISSN: 1090-6533
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract X-ray topography and diffractometry are used to study the crystal structure of cadmium pyroniobate Cd2Nb2O7 at room temperature. Structural quality parameters were determined for crystals grown with different degrees of impurity doping. The nature of the crystal lattice damage is analyzed as a function of the type and concentration of impurities.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1262553
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  • 10
    Digitale Medien
    Digitale Medien
    Optical absorption spectroscopy of synthetic tourmalines (1993)
    Springer
    Physics and chemistry of minerals 20 (1993), S. 209-220 
    Details
    ISSN: 1432-2021
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Geologie und Paläontologie , Physik
    Notizen: Abstract Tourmaline solid solutions containing Fe, Fe+ Ti, Cr, Ni, Cu, Co, Mn chromophoric centers have been grown hydrothermally at 650° C and 1,5 kbar on natural seeding plates close to the elbaite composition. The newly grown tourmalines were characterized by chemical analyses and optical absorption spectroscopy in the range 26316-5000 cm-1 at 297 K and in the range 26316-9090 cm-1 at 77 K. Most characteristic of Fe2+, Fe3+-bearing specimens is the presence of intensive σpolarized absorption bands caused by exchange-coupled Fe2+-Fe3+ pairs in Y- and Z-sites of the tourmaline structure. An additional intensive absorption band 12500 cm-1 (σ-polarisation) appears in some specimens but is not yet found in spectra of natural tourmalines. The colour and spectroscopic properties of the Fe3+, Mn3+ and Cu2+ containing tourmalines are significantly affected by the presence of even the smallest Li-contents. The results suggest that Fe2+, Cu2+, Co2+, Ni2+-ions occupy, predominantly, Y-sites of the tourmaline structure, whereas the Cr3+-ions seem to enter the smaller Z-octachedra.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00200123
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