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  • 1995-1999  (9)
  • 1940-1944
  • 1999  (9)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6835-6840 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanometer-sized iron particles with diameters in the range 5.5–11.1 nm were grown within a silica gel by an electrodeposition method. Electron diffraction measurements show that some of the iron particles were oxidized to Fe3O4. dc resistivity measurements over the temperature range 110–300 K show a T−1/4 variation indicating a variable range hopping transport. ac conductivity over the frequency range 100 Hz–2 MHz show an overlapping large polaron tunneling mechanism to be operative. The dielectric modulus spectra as a function of frequency were analyzed on the basis of a stretched exponential relaxation function. The values of the exponent β as extracted from this analysis were in the range 0.38–0.46. The activation energies corresponding to the maximum of the imaginary part of the dielectric modulus were in the range 0.13–0.20 eV. These are ascribed to an electron tunneling mechanism. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3623-3625 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanoparticles of silver with diameters in the range 10.3–25.7 nm were grown within a silica gel medium by an electrodeposition technique. The dc resistivity of the nanocomposites was measured over the temperature range 100–300 K. The resistivity as a function of inverse temperature shows a maximum at around 175 K. This is explained as arising due to the presence of two conduction mechanisms, viz., an electron tunnelling between metal particles and conduction through a percolated metal structure which is fractal in nature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7135-7139 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the effect of annealing on a thin Fe film deposited on a Si(111) substrate, using x-ray reflectivity and secondary ion mass spectrometry (SIMS) techniques. Using Fourier transform of the x-ray reflectivity data, we have estimated the layer thickness of the film. From the estimated thickness and critical value of the scattering vector qc obtained from the reflectivity data, an initial guess model of the electron density profile of the film is made. Using an iterative inversion technique, based on the Born approximation, with the obtained initial guess model, we have extracted the actual electron density profile of the film as a function of depth from the specular x-ray reflectivity data. On annealing, we observe interdiffusion of Fe and Si resulting in an increase in the thickness of the film. We have also carried out a SIMS measurement on the annealed sample to support the result of the annealing effect observed from the analysis of x-ray reflectivity data. The SIMS analysis indicates that the top of the film is rich in Si which has diffused from the substrate to the surface of the Fe film on annealing. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 126-128 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: History-dependent metastable states with different bulk properties are formed in the vortex state of the type-II superconductor 2H-NbSe2. Magnetic measurements demonstrate the difference between the shielding responses of a field- and a zero-field-cooled state, and provide a procedure for switching the system from one state to the other. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 847-849 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dc characteristics of Si1−x−yGexCy P-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs) were evaluated between room temperature and 77 K and were compared to those of Si and Si1−xGex PMOSFETs. The low-field effective mobility in Si1−x−yGexCy devices is found to be higher than that of Si1−xGex (grown in the metastable regime) and Si devices at low gate bias and room temperature. However, with increasing transverse fields and with decreasing temperatures, Si1−x−yGexCy devices show degraded performance. The enhancement at low gate bias is attributed to the strain stabilization effect of C. This application of Si1−x−yGexCy in PMOSFETs demonstrates potential benefits in the use of C for strain stabilization of the binary alloy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2076-2078 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge implantation followed by high-temperature solid phase epitaxy was used to form a relaxed substrate, eliminating need for the growth of relaxed Si1−xGex layers. Upon this film, a 2000 Å buffer layer of Si0.85Ge0.15 followed by a 200 Å strained Si layer was grown by ultrahigh-vacuum chemical vapor deposition. For comparison, unstrained Si epitaxial films and a 2000 Å thick film of Si0.85Ge0.15 (on unimplanted Si) followed by 200 Å of Si were used. n-channel metal–oxide–semiconductor transistors were fabricated and their dc characteristics were examined. Strained Si devices show a 17.5% higher peak linear μFE than control devices as a result of higher electron mobility in the strained Si channel. This work demonstrates a simple method for the formation of strained Si layers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 55 (1999), S. 2000-2002 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 12 (1999), S. 1-3 
    ISSN: 1434-6036
    Keywords: PACS. 47.20.Ma Interfacial instability - 83.10.Ji Fluid dynamics (nonlinear fluids) - 68.10.-m Fluid surfaces and fluid-fluid interfaces
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: We study viscous fingering patterns in a lifting Hele-Shaw cell, where a non-Newtonian fluid (oil paint) is displaced by air. The lengths of the air fingers are measured and their cumulative distribution is seen to follow a power law with log-periodic oscillations indicating the presence of discrete scale invariance.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1435-3725
    Keywords: 12.38.-t ; 13.85.-t ; 13.87.Ce ; 13.87.Fh
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We present a study of correlations between D and $${\overline D}$$ mesons produced in 500 GeV/cπ−-nucleon interactions, based on data from experiment E791 at Fermilab. We have fully reconstructed 791 ± 44 charm meson pairs to study correlations between the transverse and longitudinal momenta of the two D mesons and the relative production rates for different types of D meson pairs. We see slight correlations between the longitudinal momenta of the D and the $${\bar D}$$ , and significant correlations between the azimuthal angle of the D and the $${\bar D}$$ . The experimental distributions are compared to a next-to-leading-order QCD calculation and to predictions of the PYTHIA/JETSET Monte Carlo event generator. We observe less correlation between transverse momenta and different correlations between longitudinal momenta than these models predict for the default values of the model parameters. Better agreement between data and theory might be achieved by tuning the model parameters or by adding higher order perturbative terms, thus contributing to a better understanding of charm production. The relative production rates for the four sets of charm pairs, $$D^0{{\overline D}^0}, D^0 D^{-}, D^+{{\overline D}^0}, D^+ D^{-}$$ as calculated in the PYTHIA/JETSET event generator with the default parameters, agree with data as far as the relative ordering, but predict too many $$D^+ {{\overline D}^0}$$ pairs and too few $$D^+ D^{-}$$ pairs.
    Type of Medium: Electronic Resource
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