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  • 2000-2004  (2)
  • 2001  (2)
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  • 2000-2004  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Low resistance magnetic tunnel junctions and their interface structures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7558-7560 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of interface structure and oxidation state were studied in stacked magnetic tunnel junction (MTJ) structures with top and bottom antiferromagnetic layers to obtain optimum resistance and high tunneling magnetoresistance (TMR) ratios for read heads. The roughness of the NiFe surface and the Al coverage were significantly improved by introduction of O2 surfactant gas on the Ta-seed-layer surface, which increased TMR ratios of the MTJ with low resistance area (RA) products of less than 10 Ω μm2. Furthermore, it was found that avoidance of Ni oxidation and Co oxidation at the tunnel barrier interface is essential to obtaining high TMR ratios, and that a good Al coverage and Fe–oxide formation may enhance TMR ratios when Fe-rich magnetic materials are used. For the top-type and bottom-type structures, a TMR ratio of 12%–17% with RA products of 6–7 Ω μm2 was obtained, which provides sufficient performance for read heads. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361054
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  • 2
    Electronic Resource
    Electronic Resource
    Near-field photoluminescence study of GaNAs alloy epilayer at room and cryogenic temperature (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1508-1510 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the spatial distribution of the optical properties of a GaNAs (N∼0.8%) epilayer to investigate the carrier recombination mechanism at both room temperature and cryogenic temperature using a near-field scanning optical microscope. A difference between the macro and near-field photoluminescence (PL) spectra at room temperature was not observed. At low temperature, we found spatial inhomogeneity of the optical properties and sharp features in the near-field PL spectrum. These findings indicate that the dominant emission mechanism changes from recombination of delocalized carriers at room temperature to recombination of localized carriers (excitons) trapped in the local potential minimum due to compositional fluctuation at low temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1353815
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    Paper (German National Licenses)
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