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  • 2005-2009  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 381-382 (June 2008), p. 65-68 
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: This paper develops a new separated mini-environment to provide a constant temperaturechamber for the placement of Micro/Nano-metrology instrument. In this paper, the rule oftemperature change with time under natural convection and coercive convection is presented. Themeasurement and control system is composed of TEC, programmable power source and precisetemperature measurement system. The mathematic model of the constant temperature chamber isidentified making use of system identification theory and system identification toolkit of MATLAB.The temperature stability is improved by applying auto-adaptive PID method. Experiments showthat the temperature fluctuation of a single-point is less than 0.02°C and the whole field is within0.05°C. The goal of high-precision temperature control is achieved
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: We present a comprehensive description of synchrotron-based analytical microprobe techniques used to locally measure the diffusion length and chemical character of metal clusters in multicrystalline silicon (mc-Si) solar cell material. The techniques discussed are (a) X-ray fluorescence microscopy, capable of determining the spatial distribution, elemental nature, size, morphology, and depth of metal-rich particles as small as 30 nm in diameter; (b) X-ray absorption microspectroscopy, capable of determining the chemical states of these metal-rich precipitates, (c) X-ray beam induced current (XBIC), which maps the minority carrier recombination activity, and (d) Spectrally-resolved XBIC, which maps the minority carrier diffusion length. Sensitivity limits, optimal synchrotron characteristics, and experimental flowcharts are discussed. These techniques have elucidated the nature and effects of metal-rich particles in mc-Si and the physical mechanisms limiting metal gettering from mc-Si, and have opened several promising new research directions
    Type of Medium: Electronic Resource
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