ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
As SiC devices begin to become commercially available, it is becoming clear thatelectrical efficiency improvement is one of the key drivers for their adoption. For RF applications,SiC MESFETs have the ability to be easily linearized via digital pre-distortion to offer a 47%improvement in efficiency. In broadband WiMax applications, SiC MESFETs offer more thandouble the efficiency versus using GaAs MESFETs. SiC Schottky diodes are allowing up to a 25%reduction in losses in power supplies for computers and servers when used in the power factorcorrection circuit. For motor control, SiC Schottkys allow up to a 33% reduction in losses, asdemonstrated for a 3 HP motor drive. Even higher efficiencies can be obtained when the Schottkysare combined with a SiC switch. A 400 W boost converter has been demonstrated using a SiCMOSFET and Schottky diode, operating at 〉200° C, with an extremely high efficiency of 98%.These improvements in electrical efficiency can have a significant impact in reducing overallelectricity consumption worldwide, impacting virtually every aspect of electrical usage, rangingfrom information technology to motor control, with potential savings of $35 billion/yr
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1129.pdf
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