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  • Artikel: DFG Deutsche Nationallizenzen  (34)
  • 2000-2004  (11)
  • 1990-1994  (23)
  • 1
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Science Ltd
    British journal of dermatology 150 (2004), S. 0 
    ISSN: 1365-2133
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Background  Epidermolytic palmoplantar keratoderma (EPPK) is an autosomal dominant inherited skin disorder characterized by diffuse yellow thickening of the skin of the palms and soles, sharply bordered with erythematous margins. Histologically and ultrastructurally, EPPK presents cytolysis of keratinocytes and abnormal aggregation of tonofilaments in the suprabasal layers of the epidermis. To date, 15 different mutations of the keratin 9 gene (KRT9) have been demonstrated to cause most cases of EPPK.Objectives  To identify the KRT9 mutation in a large Chinese family with EPPK.Methods  Denaturing high-performance liquid chromatography (DHPLC), DNA sequencing and allele-specific polymerase chain reaction (AS-PCR) were used to screen exon 1 of the KRT9 gene for sequence variations.Results  The DHPLC elution profiles of the DNA fragments amplified from the affected samples differed from those obtained from unaffected individuals, indicating that a sequence variation existed within the analysed fragment of KRT9. DNA sequencing revealed a novel insertion–deletion mutation in the exon 1 of KRT9, 497delAinsGGCT, resulting in the change of tyrosine166 to tryptophan and leucine (Y166delinsWL). AS-PCR confirmed the mutation was not a common polymorphism.Conclusions  The results suggest the molecular basis of EPPK in this Chinese family and provide further evidence that mutations in the helix initiation motif of keratin 9 underlie Chinese EPPK.
    Materialart: Digitale Medien
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  • 2
    ISSN: 1520-6904
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5995-5997 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The frequency dependence of the transverse biased permeability μ't(f ) has been measured up to 250 MHz in thin (0.044 μm) and thick (2.1 μm) unpatterned sputtered permalloy films with uniaxial anisotropy. In these films, the initial permeability along the hard axis can be described by the classical eddy current damping model assuming uniform rotation. For both films, μ't at low frequency agrees reasonably well with Hoffman's ripple model assuming appropriate values for the structure factor. In the thin film, μ't(f ) is independent of frequency within experimental error up to at least 250 MHz. However, in the thick film μ't(f ) decreases more rapidly with frequency than can be explained by classical eddy currents, when the transverse bias field HB is not very large compared to the net anisotropy field. The value of HB at which μ't(f ) reaches a maximum amplitude is also found to increase monotonically with increasing frequency, also inconsistent with simple eddy current predictions. It is suggested that the formation of ripple walls leads to anomalous eddy current losses similar to that observed in bulk materials.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 321-328 
    ISSN: 1089-7674
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Slow-time-scale magnetic fields driven by fast-time-scale electromagnetic waves or plasma waves are examined from the perspective of the Vlasov–Maxwell equations for a relativistic Vlasov plasma. An equation for slow-time-scale magnetic field is obtained. The field proposed in the present paper is a result of wave–wave beating which drives a solenoidal current. The magnitude of the slow-time-scale magnetic field proposed here can be as high as 20 MG at the critical surface for a laser intensity I=1018 W/cm2 at wavelength λ0=1.05 μm. The predicted magnetic field is observed in two-dimensional particle simulations presented here. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 58 (1992), S. 0 
    ISSN: 1471-4159
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Medizin
    Notizen: Abstract: The effect of dopamine (DA) on the binding of [3H]phorbol 12,13-dibutyrate ([3H]PdBu) in cultured rat striatal cells was examined. DA maximally increased specific [3H]PdBu binding by 70 ± 10%, an increase comparable to that observed with norepinephrine (NE). This finding suggests that DA activates protein kinase C in cultured striatal cells, because increases in [3H]PdBu binding reflect translocation of protein kinase C. Half-maximal stimulation was observed with 10–6M DA. The peak response was observed at 2–3 min after addition of 10–4M DA, but [3H]PdBu binding was still increased above basal at 30 min. DA was not acting via an adrenergic receptor. Prazosin (10–6M) blocked the response to NE, suggesting mediation by an α1-adrenergic receptor, but had little effect on the response to DA. Conversely, the D1 receptor antagonist SCH-23390 (10–6M) blocked the response to DA, but only partially inhibited the response to NE. Morphine (10–6M) inhibited the response to DA by 46 ± 14%, but did not affect significantly the response to NE. The DA effect on [3H]PdBu binding is apparently independent of the increase in cyclic AMP seen on D1 receptor activation. Forskolin, apomorphine, and the D1 agonist SKF-38393 all increased cyclic AMP in striatal cells, but were less effective than DA in stimulating [3H]PdBu binding. The D2 agonist quinpirole was ineffective in stimulating either cyclic AMP or [3H]PdBu binding.
    Materialart: Digitale Medien
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  • 6
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Special double- and separate-confinement InGaAsP/GaAs heterostructures intended for photoluminescence measurements have been grown by low-pressure metal-organic chemical-vapor deposition. The band gap of the active region quaternary material was close to 1.5 eV, and the waveguide of the separate-confinement structures was near 1.8 eV. Measurement of the integrated luminescence efficiency at 300 K has shown that over a wide range of excitation level (10–103 W/cm2) radiative transitions are the dominant mechanism for excess carrier recombination in the active region of the structures studied. As determined by spectral measurements, the excess carrier concentration in the waveguide of the separate-confinement heterostructures and the intensity of the waveguide emission band correspond to a condition of thermal equilibrium of the excess carrier populations in the active region and the waveguide. The ratio of the intensity of the waveguide emission to the active region emission fits a model which assumes that the barrier height for minority carriers (holes) is equal to the difference in band gaps between the active region and the waveguide region.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4092-4096 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Y-Ba-Cu-O thin films with different stoichiometry were grown by metal organic chemical vapor deposition on MgO and SrTiO3. The samples showed superconducting behavior in a wide range of average stoichiometry. However, energy dispersive x-ray spectroscopy (EDX) measurements show that best results can be obtained only in a small stoichiometry range. Critical temperatures of Tc(approximately-greater-than)89 K and critical current densities of jc (77 K)(approximately-greater-than)2×106 A/cm2 could be obtained with optimized stoichiometry. Spatially resolved EDX measurements show that copper tends to form precipitates on the layers if its average content exceeds 50 mol %, while yttrium is incorporated into the matrix if offered in excess.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2812-2814 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Strong correlation between x-ray diffraction characteristics and strain distribution inside GaInP/GaAs superlattices has been reported. It is found that the symmetry of (002) diffraction patterns can be used to evaluate the interface strain status. A sample with no interfacial strains has a symmetric (002) diffraction pattern and weak (004) diffraction pattern. It is also demonstrated that strain distribution in superlattices can be readily estimated qualitatively by analyzing x-ray diffraction patterns. © 1994 American Institute of Physics.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1004-1005 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High-power operation of 3 W in pulse mode, 750 mW in quasi-continuous wave and 650 mW in continuous wave per uncoated facet from 100-μm aperture has been demonstrated for 1-mm-long cavity InGaAsP/GaAs 808-nm laser diodes prepared by low-pressure metalorganic chemical vapor deposition. Threshold current density of 300 A/cm2, differential efficiency of 1.1 W/A, T0=155 °C, transverse beam divergence of 27°, and less than 2-nm linewidth at 808 nm have been measured. No degradation has been observed after 1000 h of operation in a quasi-continuous wave regime.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2260-2262 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report a theoretical model that accurately describes the effects of minority carrier leakage from the InGaAsP waveguide into InGaP cladding layers in high-power aluminum-free 0.8 μm InGaAsP/InGaP/GaAs separate confinement heterostructure lasers. Current leakage due to the relatively low band-gap discontinuity between the active region and the InGaP barrier can be eliminated by employing laser diodes with cavity length longer than 500 μm. Experimental results for lasers grown by low-pressure metalorganic chemical vapor deposition are in excellent agreement with the theoretical model. © 1994 American Institute of Physics.
    Materialart: Digitale Medien
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