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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4275-4281 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular dynamics has been employed to study the disordering and amorphization processes in SiC irradiated with Si and Au ions. The large disordered domains, consisting of interstitials and antisite defects, are created in the cascades produced by Au primary knock-on atoms (PKAs); whereas Si PKAs generate only small interstitial clusters, with most defects being single interstitials and vacancies distributed over a large region. No evidence of amorphization is found at the end of the cascades created by Si recoils. However, the structure analysis indicates that the large disordered domains generated by Au recoils can be defined as an amorphous cluster lacking long-range order. The driving force for amorphization in this material is due to the local accumulation of Frenkel pairs and antisite defects. These results are in good agreement with experimental evidence, i.e., the observed higher disordering rate and the residual disorder after annealing for irradiation with Au2+ are associated with a higher probability for the in-cascade amorphization or formation of a large disordered cluster. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7671-7678 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Disorder accumulation and annealing behavior on the Ga sublattice in gallium nitride (GaN) implanted with 1.0 MeV Au2+ (60° off surface normal) at 180 or 300 K have been studied using in situ Rutherford backscattering spectrometry in a 〈0001〉-channeling geometry. Complete amorphization in GaN is attained at 6.0 and 20 Au2+/nm2 for irradiation at 180 and 300 K, respectively. A saturation in the Ga disorder at and behind the damage peak was observed at intermediate ion fluences at both 180 and 300 K. No measurable thermal recovery was found at 300 K for the full range of damage produced at 180 K. However, distinct epitaxial regrowth in the bulk and Ga reordering at surface occurred after annealing at 870 K. The implanted Au readily diffuses into the highly damaged regions at elevated temperatures, and the redistribution of the Au atoms in the implanted GaN varies with the damage profiles. A double-peak Au profile developed with the maxima located in the amorphous surface region and near the Au mean projected range. The result is interpreted as Au atom diffusion into the amorphous regime near the surface and Au trapping at irradiation-induced defects in the crystal structure. This trapping effect is also evidenced in this study by the suppressed recovery of the Au-decorated disorder in GaN. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 811-815 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurement of diode photocurrent represents a new method for obtaining extended x-ray absorption fine structure (EXAFS) information specific to the junction region of a diode. EXAFS measurements at Ga and As K edges of an aluminum-on-GaAs Schottky diode have been used to demonstrate this new technique. The spectra observed in the diode current arise mainly from x-ray absorption events within 2 μm of the diode junction, i.e., within a minority carrier diffusion length of the approximately 600-A(ring)-wide depletion region. The diode current EXAFS are consistent with EXAFS obtained from fluorescence measurements.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 168-169 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole-trap states in the gate oxide of a Si metal-oxide-semiconductor field-effect transistor (MOSFET) are investigated by inhomogeneous excimer laser irradiation. Subbandgap ultraviolet light photons with an energy exceeding a threshold lying between 5.5 and 6.4 eV were found to excite electrons from these originally neutral states into the SiO2 conduction band. A fixed positive charge is left behind. The degradation in MOSFET performance due to the irradiation is comparable to that accompanying hot-hole injection. Also, subsequent hot-electron stress changes the device characteristics in a way similar to hot-electron stress following hot-hole stress. It is concluded that the traps responsible for hot-carrier degradation cause the optically induced charge trapping.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 670-672 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sequential irradiation with 3 MeV He+ and 10 MeV C3+ ions performed at T=150 K produces two separate amorphous buried layers in cadmium niobate pyrochlore single crystals. Further irradiation at room temperature results in the formation of nanometer-scale particles in the amorphized regions. An ion-cleaving technique was used to facilitate the observation of these nanoparticles by using scanning electron microscopy. Complete granulation with particle sizes ranging from 30 to 150 nm was observed. X-ray energy-dispersive spectrometry analysis indicates that the numerically large population of smaller particles (∼50 nm) contains a high Cd content (∼70%) and the numerically smaller population of larger particles (〉100 nm) contains negligible Nb with a Cd-to-O ratio of about 1:0.54.© 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 92 (1988), S. 4964-4970 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Organometallics 6 (1987), S. 880-882 
    ISSN: 1520-6041
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 108 (1986), S. 5041-5041 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 122 (2003), S. 0 
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Cucumber production in Spain is being threatened by the cucumber vein yellowing virus (CVYV), which has been causing severe yield losses since it was first detected in 2000. Although most of the Spanish cucumber production is based on hybrid cultivars, farmers have grown cucumber landraces for centuries. A collection of 46 Spanish cucumber landraces, four melon cultivars and one accession of Cucumis africanus, were evaluated for resistance to CVYV. An isolate of CVYV from Almeria, closely related to CVYV from Israel, was used. CVYV was mechanically transmitted and detected by reverse transcriptase polymerase chain reaction and molecular hybridization. Only mild infections were observed in melons, while the wild species C. africanus was susceptible to this disease. Most of the cucumber accessions assayed were highly susceptible to CVYV and showed vein-clearing symptoms, severe growth reduction and a high viral accumulation. Several cucumber accessions were partially resistant to this virus, displaying mild symptoms and a significantly reduced viral accumulation. These partially resistant varieties could be cultivated under integrated production systems, and also be used as resistance sources to develop new cucumber hybrids resistant to CVYV.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 122 (2003), S. 0 
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Fusarium head blight (FHB), primarily caused by Fusarium graminearum in North America can result in significant losses in the yield and quality of wheat (Triticum aestivum L). Resistance sources have been largely limited to Chinese germplasm and, in particular, Sumai 3 or its derivatives. In recent years, resistance has been identified in Europe. Previous studies using the wheat line ‘Bizel’, developed in France, have shown that it has resistance to Fusarium head blight. Pedigree information shows that one of its progenitors is rye. This experiment was conducted to determine if ‘Bizel’ has rye chromatin, with the goal of developing a strategy for mapping FHB resistance genes. Two methods based on repetitive DNA sequences specific to rye were implemented. With both approaches, it was demonstrated that ‘Bizel’ does not contain rye chromatin. Consequently, wheat SSRs can be used to map ‘Bizel’ resistance genes for FHB.
    Type of Medium: Electronic Resource
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