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  • 1
    Electronic Resource
    Electronic Resource
    A simple technique for height calibration for z piezo with Angstrom resolution of scanning probe microscopes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 589-590 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a simple method of preparing a "calibration standard" of nanometer order for the height calibration of z piezo scanner used in scanning probe microscopes. The calibration standard can be accurately characterized using the grazing incidence x-ray reflectivity technique. This method enables one to calibrate displacement/voltage (Å/V) of the z piezo scanner with Angstrom resolution. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150250
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  • 2
    Electronic Resource
    Electronic Resource
    Structural and chemical characterization of 4.0 nm thick oxynitride films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 540-542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report x-ray reflectivity and secondary ion mass spectrometry (SIMS) analysis of several silicon oxynitride films of 4.0 nm thick as a function of nitrogen concentration at the interface between the oxide and the Si substrate. The x-ray reflectivity data have been analyzed using a model-dependent matrix method, and the results were compared with the model-independent method based on the distorted wave Born approximation and Fourier inversion refinement technique based on the Born approximation. Limitation of each of these techniques is also discussed. The x-ray reflectivity analysis of the films reveals the existence of high electron density at the region where nitrogen accumulation has been observed. Nitrogen accumulation has been observed using dual-beam time-of-flight-SIMS. The results of x-ray reflectivity have been compared with the results of SIMS. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418418
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  • 3
    Electronic Resource
    Electronic Resource
    Oxygen recoil implant from SiO2 layers into single-crystalline silicon (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5997-6001 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is important to understand the distribution of recoil-implanted atoms and the impact on device performance when ion implantation is performed at a high dose through surface materials into single crystalline silicon. For example, in ultralarge scale integration impurity ions are often implanted through a thin layer of screen oxide and some of the oxygen atoms are inevitably recoil implanted into single-crystalline silicon. Theoretical and experimental studies have been performed to investigate this phenomenon. We have modified the Monte Carlo ion implant simulator, UT-Marlowe (B. Obradovic, G. Wang, Y. Chen, D. Li, C. Snell, and A. F. Tasch, UT-MARLOWE Manual, 1999), which is based on the binary collision approximation, to follow the full cascade and to dynamically modify the stoichiometry of the Si layer as oxygen atoms are knocked into it. CPU reduction techniques are used to relieve the demand on computational power when such a full cascade simulation is involved. Secondary ion mass spectrometry (SIMS) profiles of oxygen have been carefully obtained for high dose As and BF2 implants at different energies through oxide layers of various thicknesses, and the simulated oxygen profiles are found to agree very well with the SIMS data. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355699
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  • 4
    Electronic Resource
    Electronic Resource
    Monte Carlo simulation of electron transport in simple orthorhombically strained silicon (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4717-4724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the electron transport properties of simple orthorhombically strained silicon studied by density-functional theory and Monte Carlo simulation. The six degenerate valleys near X points in bulk silicon break into three pairs with different energy minima due to the orthorhombic strain. The degeneracy lifting causes electron redistribution among these valleys at low and intermediate electric fields. Thus the drift velocity is enhanced under an electric field transverse to the long axis of the lowest valleys. Orthorhombically strained layers should be of interest in vertical SiGe-based heterostructure n-channel–metal–oxide–semiconductor field effect transistors. The simple orthorhombically strained Si grown on a Si0.6Ge0.4 sidewall has a low-field mobility almost twice that of bulk Si and an electron saturation velocity approximately 20% higher. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311304
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  • 5
    Electronic Resource
    Electronic Resource
    Quantum confinement effect in heat treated silver oxide nanoparticles (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8541-8544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ag2O particles of sizes varying from 6.0 to 16 nm have been prepared by a chemical method. These have been subjected to a heat treatment at temperatures varying from 533 to 623 K. The optical absorption spectra of the heat treated particles dispersed on a glass substrate have been delineated. The absorption peak shows a maximum in wavelength as a function of heat treatment temperature. This has been explained on the basis of formation of nanometer-sized silver layer on the Ag2O particles and the consequential electron confinement within the same. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373575
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  • 6
    Electronic Resource
    Electronic Resource
    High harmonic generation in relativistic laser–plasma interaction : Review,Tutorial and Invited Papers from the 43rd Annual Meeting of the APS Division of Plasma Physics (2002)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 2393-2398 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High harmonics generated due to the scattering of relativistic electrons from high intensity laser light is studied. The experiments are carried out with an Nd:Glass laser system with a peak intensity of 2×1018 W cm−2 in underdense plasma. It is shown that, at high intensities, when the normalized electric field approaches unity, in addition to the conventional atomic harmonics from bound electrons there is significant contribution to the harmonic spectrum from free electrons. The characteristic signatures of this are found to be the emission of even order harmonics, linear dependence on the electron density, significant amount of harmonics even with circular polarization and a much smaller spatial region over which these harmonics are produced as compared to the atomic case. Imaging of the harmonic beam shows that it is emitted in a narrow cone with a divergence of 2 to 3 degrees. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1470167
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  • 7
    Electronic Resource
    Electronic Resource
    Improving SiO2/SiGe interface of SiGe p-metal–oxide–silicon field-effect transistors using water vapor annealing (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1773-1775 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiGe p-metal–oxide–silicon field-effect transistors (p-MOSFETs) were fabricated with ultrathin thin (∼20 Å) remote plasma chemical vapor deposition gate oxides deposited directly on SiGe. A low temperature water vapor annealing was used to improve the SiO2/SiGe interface and performance of SiGe p-MOSFETs. After the wet annealing, dangling Si and Ge bonds at the interface are passivated by atomic hydrogen, the threshold voltage of SiGe p-MOSFETs decreases from −0.39 to −0.20 V, the subthreshold slope from 117 to 87 mV/dec, and more than 20% output current enhancement is observed in these SiGe p-MOSFETs compared with Si control devices. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1445806
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical properties of ZrO2 gate dielectric on SiGe (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 502-504 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the electrical properties of a high dielectric constant (high-k) material, ZrO2, deposited directly on SiGe, without the use of a Si buffer layer or a passivation barrier. ZrO2 thin films of equivalent oxide thickness (EOT) down to 16.5 Å were deposited on strained SiGe layers by reactive sputtering. Results indicate that ZrO2 films on SiGe have good interfacial properties and low leakage currents. Sintering in forming gas at 350 °C for 1 h could further improve the film quality. Although threshold voltage stability and dielectric dispersion become a concern for thick ZrO2 films, thin ZrO2 films of EOT less than 20 Å exhibit excellent electrical properties making them a good candidate for SiGe applications. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125801
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  • 9
    Electronic Resource
    Electronic Resource
    Transconductance improvement in surface-channel SiGe p-metal-oxide-silicon field-effect transistors using a ZrO2 gate dielectric (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3085-3087 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon and surface-channel SiGe p-metal-oxide-silicon field-effect transistors (p-MOSFETs) using a ZrO2 gate dielectric with equivalent oxide thickness (EOT) less than 20 Å was fabricated. These p-MOSFETs show similar behavior to that of other high-k gate dielectric p-MOSFETs reported in the literature, and mobility enhancement is observed in the surface-channel SiGe p-MOSFETs. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372204
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  • 10
    Electronic Resource
    Electronic Resource
    Study on the effect of plasma treatment on TiN films in N2/H2 atmosphere using x-ray reflectivity and secondary ion mass spectroscopy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 512-514 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the effect of plasma treatment on TiN films in N2/H2 atmosphere grown by chemical vapor deposition. The physical parameters and chemical evolution of the film as a function of duration of plasma treatment was studied using grazing incidence x-ray reflectivity (GIXR). From the analysis of GIXR we obtained the electron density profile of the film as a function of its depth. The GIXR data were analyzed using matrix method and distorted wave Born approximation scheme. Comparison of both the analysis schemes gives proper interpretation of the parameters obtained. The results obtained from the analysis of x-ray reflectivity data are supported by time of flight secondary ion mass spectroscopy depth profiling. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1435406
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