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  • 2000-2004  (3)
  • 1
    Electronic Resource
    Electronic Resource
    The L3A facility at the Vinca Institute: Surface modification of materials, by heavy ion beams from an electron cyclotron resonance ion source : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 786-788 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article describes the L3A experimental facility for surface modification of materials at the Vinca Institute of Nuclear Sciences, in Belgrade. This facility was completed and put into operation in May 1998. It is connected to the mVINIS ion source, an electron cyclotron resonance ion source capable of producing a wide range of multiply charged ions from gaseous and solid substances. The heavy ion beams obtained from mVINIS are separated by charge to mass ratio (q/m) and transported to the target chamber for sample irradiation and modification. The target chamber is equipped with a multipurpose target holder, an electron-beam evaporation source for thin layer deposition, a residual gas analyzer, and other auxiliary equipment. There is also an additional low energy argon ion source for target preparation/sputtering and for ion beam assisted deposition. In this article we describe the layout and performances of the L3A facility, the experience gained during 1 yr of operation, and the requirements imposed by the current and future experimental programs. Currently, there are 24 experimental programs competing for the ion beam time at the L3A facility. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150294
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  • 2
    Electronic Resource
    Electronic Resource
    Amorphous-iron disilicide: A promising semiconductor (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1438-1440 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here the synthesis and the measurements of the microstructural and optical properties of a promising semiconductor, amorphous-iron disilicide. The material was obtained by ion-beam mixing of Fe layers on Si, with Ar8+ ions, at 300 °C. Optical absorption measurements indicate a semiconductor with a direct band gap of 0.88 eV. The significance of this discovery is that it demonstrates the existence of such a material. It should be possible to synthesize by other techniques and could be applied in large-area electronics. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1400760
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  • 3
    Electronic Resource
    Electronic Resource
    Direct synthesis of β-FeSi2 by ion beam mixing of Fe/Si bilayers (2000)
    Springer
    Applied physics 71 (2000), S. 43-45 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.80.Jh; 68.55.Nq; 61.82.Fk
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The iron di-silicide β-FeSi2 is a promising direct band gap semiconductor but difficult to produce. Here, the successful direct synthesis of this phase by ion beam mixing of Fe/Si bilayers at temperatures in the range of 450 to 550 °C is reported. The obtained single-phase β-FeSi2 layers and their structure are confirmed by Rutherford backscattering spectrometry, X-ray diffraction and conversion electron Mössbauer spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050023
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