Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
87 (2000), S. 6998-7000
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A series of Fe45.51(Al2O3)54.49 (volume fraction) nanogranular films were prepared using the ion-beam sputtering technique. A saturated Hall resistivity of about 12.5 μΩ cm was observed at room temperature. With different annealing temperature TA up to 300 °C, the saturated Hall resistivity of the sample decreases only a little, which shows good thermal stability. The transmission electron microscopy image shows that very small Fe particles (smaller than 1 nm) embedded in the Al2O3 matrix, and connected into the network, with the ρ–T curve indicates that this Hall effect may originate from the percolation phenomenon. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.372910
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